JP2994407B2 - Ｘ線リソグラフィ用マスクの製法 - Google Patents

Ｘ線リソグラフィ用マスクの製法

Info

Publication number
JP2994407B2
JP2994407B2 JP33298289A JP33298289A JP2994407B2 JP 2994407 B2 JP2994407 B2 JP 2994407B2 JP 33298289 A JP33298289 A JP 33298289A JP 33298289 A JP33298289 A JP 33298289A JP 2994407 B2 JP2994407 B2 JP 2994407B2
Authority
JP
Japan
Prior art keywords
substrate
metal
silicon
membrane
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP33298289A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02222521A (ja
Inventor
ヤハロム ヨーゼフ
Original Assignee
テクニオン リサーチ アンド ディベロプメント ファウンデーション リミティド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by テクニオン リサーチ アンド ディベロプメント ファウンデーション リミティド filed Critical テクニオン リサーチ アンド ディベロプメント ファウンデーション リミティド
Publication of JPH02222521A publication Critical patent/JPH02222521A/ja
Application granted granted Critical
Publication of JP2994407B2 publication Critical patent/JP2994407B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP33298289A 1988-12-30 1989-12-25 Ｘ線リソグラフィ用マスクの製法 Expired - Lifetime JP2994407B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL88837A IL88837A (en) 1988-12-30 1988-12-30 Method for the preparation of mask for x-ray lithography
IL088837 1988-12-30

Publications (2)

Publication Number Publication Date
JPH02222521A JPH02222521A (ja) 1990-09-05
JP2994407B2 true JP2994407B2 (ja) 1999-12-27

Family

ID=11059538

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33298289A Expired - Lifetime JP2994407B2 (ja) 1988-12-30 1989-12-25 Ｘ線リソグラフィ用マスクの製法

Country Status (6)

Country Link
US (1) US5096791A (enExample)
JP (1) JP2994407B2 (enExample)
DE (1) DE3943356A1 (enExample)
FR (1) FR2641383A1 (enExample)
GB (1) GB2226656B (enExample)
IL (1) IL88837A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3334911B2 (ja) * 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
US5318687A (en) * 1992-08-07 1994-06-07 International Business Machines Corporation Low stress electrodeposition of gold for X-ray mask fabrication
US5670279A (en) * 1994-03-24 1997-09-23 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
US5567551A (en) * 1994-04-04 1996-10-22 The United States Of America As Represented By The Secretary Of The Navy Method for preparation of mask for ion beam lithography
JPH10106943A (ja) * 1996-06-04 1998-04-24 Nikon Corp マスク用基板の製造方法
EP1329532B8 (en) * 1997-09-22 2007-09-19 National Research Institute For Metals Ferritic heat-resistant steel and method for producing it
DE19803186C1 (de) * 1998-01-28 1999-06-17 Bosch Gmbh Robert Verfahren zur Herstellung strukturierter Wafer
US6197454B1 (en) * 1998-12-29 2001-03-06 Intel Corporation Clean-enclosure window to protect photolithographic mask
US6261943B1 (en) 2000-02-08 2001-07-17 Nec Research Institute, Inc. Method for fabricating free-standing thin metal films
US6649901B2 (en) 2002-03-14 2003-11-18 Nec Laboratories America, Inc. Enhanced optical transmission apparatus with improved aperture geometry
US7132201B2 (en) * 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
US7129180B2 (en) * 2003-09-12 2006-10-31 Micron Technology, Inc. Masking structure having multiple layers including an amorphous carbon layer
US8240217B2 (en) * 2007-10-15 2012-08-14 Kavlico Corporation Diaphragm isolation forming through subtractive etching
RU2704673C1 (ru) * 2019-02-22 2019-10-30 Федеральное государственное бюджетное учреждение науки Институт Ядерной Физики им. Г.И. Будкера Сибирского отделения (ИЯФ СО РАН) Способ изготовления рентгенолитографического шаблона

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742230A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask support substrate
US4368215A (en) * 1975-10-28 1983-01-11 Hughes Aircraft Company High resolution masking process for minimizing scattering and lateral deflection in collimated ion beams
DE2643811C2 (de) * 1975-10-28 1981-10-15 Hughes Aircraft Co., Culver City, Calif. Lithographie-Maske mit einer für Strahlung durchlässigen Membran und Verfahren zu ihrer Herstellung
JPS5385170A (en) * 1977-01-05 1978-07-27 Hitachi Ltd Soft x-ray transfer mask
SU864383A1 (ru) * 1979-12-13 1981-09-15 Предприятие П/Я Р-6707 Шаблон дл рентгенолитографии
JPS5789221A (en) * 1980-11-25 1982-06-03 Seiko Epson Corp Multiple mask
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
JPS5814837A (ja) * 1981-07-20 1983-01-27 Nec Corp Ｘ線露光マスクの製造方法
JPS58215023A (ja) * 1982-06-07 1983-12-14 Seiko Epson Corp Ｘ線マスク
JPS5950443A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd Ｘ線マスク
JPS60220933A (ja) * 1984-04-18 1985-11-05 Nec Corp Ｘ線露光マスク及びその製造方法
JPS61160747A (ja) * 1985-01-09 1986-07-21 Canon Inc リソグラフイ−法及びリソグラフイ−用マスク保持体
DE3600169A1 (de) * 1985-01-07 1986-07-10 Canon K.K., Tokio/Tokyo Maskenstruktur zur lithographie, verfahren zu ihrer herstellung und lithographisches verfahren
US4604292A (en) * 1985-04-26 1986-08-05 Spire Corporation X-ray mask blank process
US4696878A (en) * 1985-08-02 1987-09-29 Micronix Corporation Additive process for manufacturing a mask for use in X-ray photolithography and the resulting mask
US4771017A (en) * 1987-06-23 1988-09-13 Spire Corporation Patterning process

Also Published As

Publication number Publication date
FR2641383B1 (enExample) 1995-05-24
GB2226656B (en) 1993-04-21
DE3943356A1 (de) 1990-07-05
IL88837A (en) 1993-08-18
US5096791A (en) 1992-03-17
IL88837A0 (en) 1989-07-31
JPH02222521A (ja) 1990-09-05
GB2226656A (en) 1990-07-04
FR2641383A1 (fr) 1990-07-06
GB8929271D0 (en) 1990-02-28

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