JP2914843B2 - ダイナミック型半導体メモリ - Google Patents
ダイナミック型半導体メモリInfo
- Publication number
- JP2914843B2 JP2914843B2 JP5049700A JP4970093A JP2914843B2 JP 2914843 B2 JP2914843 B2 JP 2914843B2 JP 5049700 A JP5049700 A JP 5049700A JP 4970093 A JP4970093 A JP 4970093A JP 2914843 B2 JP2914843 B2 JP 2914843B2
- Authority
- JP
- Japan
- Prior art keywords
- signal
- active
- special function
- semiconductor memory
- entry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 230000003213 activating effect Effects 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 25
- 238000012360 testing method Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 10
- 230000004044 response Effects 0.000 description 9
- 230000000630 rising effect Effects 0.000 description 9
- 210000001550 testis Anatomy 0.000 description 9
- QYAPHLRPFNSDNH-MRFRVZCGSA-N (4s,4as,5as,6s,12ar)-7-chloro-4-(dimethylamino)-1,6,10,11,12a-pentahydroxy-6-methyl-3,12-dioxo-4,4a,5,5a-tetrahydrotetracene-2-carboxamide;hydrochloride Chemical compound Cl.C1=CC(Cl)=C2[C@](O)(C)[C@H]3C[C@H]4[C@H](N(C)C)C(=O)C(C(N)=O)=C(O)[C@@]4(O)C(=O)C3=C(O)C2=C1O QYAPHLRPFNSDNH-MRFRVZCGSA-N 0.000 description 8
- 102100026127 Clathrin heavy chain 1 Human genes 0.000 description 8
- 101000912851 Homo sapiens Clathrin heavy chain 1 Proteins 0.000 description 8
- 230000001360 synchronised effect Effects 0.000 description 7
- 101100084617 Arabidopsis thaliana PBG1 gene Proteins 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 4
- 230000003111 delayed effect Effects 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 101000868045 Homo sapiens Uncharacterized protein C1orf87 Proteins 0.000 description 1
- 102100032994 Uncharacterized protein C1orf87 Human genes 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012812 general test Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5049700A JP2914843B2 (ja) | 1993-03-10 | 1993-03-10 | ダイナミック型半導体メモリ |
| US08/175,559 US5521873A (en) | 1993-03-10 | 1993-12-30 | Semiconductor dynamic random access memory |
| DE69409146T DE69409146T2 (de) | 1993-03-10 | 1994-01-03 | Dynamischer Direktzugriffhalbleiterspeicher |
| EP94100021A EP0615249B1 (en) | 1993-03-10 | 1994-01-03 | Semiconductor dynamic random access memory |
| KR1019940004659A KR0167869B1 (ko) | 1993-03-10 | 1994-03-10 | 다이나믹형 반도체 메모리 |
| TW083102232A TW279983B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-03-10 | 1994-03-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5049700A JP2914843B2 (ja) | 1993-03-10 | 1993-03-10 | ダイナミック型半導体メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06267297A JPH06267297A (ja) | 1994-09-22 |
| JP2914843B2 true JP2914843B2 (ja) | 1999-07-05 |
Family
ID=12838464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5049700A Expired - Fee Related JP2914843B2 (ja) | 1993-03-10 | 1993-03-10 | ダイナミック型半導体メモリ |
Country Status (6)
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08180700A (ja) * | 1994-12-28 | 1996-07-12 | Nec Corp | 半導体記憶装置とその試験方法 |
| KR100232897B1 (ko) * | 1996-12-31 | 1999-12-01 | 김영환 | 클럭 인에이블 신호의 제어를 통한 디램 상태 자동설정장치 및 그 구현방법 |
| JP3737437B2 (ja) * | 2001-02-01 | 2006-01-18 | Ｎｅｃエレクトロニクス株式会社 | 半導体メモリ及びその動作モードのエントリー方法 |
| JP2003045200A (ja) | 2001-08-02 | 2003-02-14 | Mitsubishi Electric Corp | 半導体モジュールおよびそれに用いる半導体記憶装置 |
| JP2007018710A (ja) * | 2006-09-05 | 2007-01-25 | Fujitsu Ltd | 半導体装置及びその試験方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250593A (ja) * | 1986-04-23 | 1987-10-31 | Hitachi Ltd | ダイナミツク型ｒａｍ |
| FR2623652A1 (fr) * | 1987-11-20 | 1989-05-26 | Philips Nv | Unite de memoire statique a plusieurs modes de test et ordinateur muni de telles unites |
| KR920007805Y1 (ko) * | 1991-02-09 | 1992-10-19 | 조규섭 | 볍씨 침종겸용 최아장치 |
-
1993
- 1993-03-10 JP JP5049700A patent/JP2914843B2/ja not_active Expired - Fee Related
- 1993-12-30 US US08/175,559 patent/US5521873A/en not_active Expired - Lifetime
-
1994
- 1994-01-03 EP EP94100021A patent/EP0615249B1/en not_active Expired - Lifetime
- 1994-01-03 DE DE69409146T patent/DE69409146T2/de not_active Expired - Fee Related
- 1994-03-10 KR KR1019940004659A patent/KR0167869B1/ko not_active Expired - Fee Related
- 1994-03-15 TW TW083102232A patent/TW279983B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP0615249A3 (en) | 1995-08-23 |
| DE69409146D1 (de) | 1998-04-30 |
| KR0167869B1 (ko) | 1999-02-01 |
| US5521873A (en) | 1996-05-28 |
| KR940022552A (ko) | 1994-10-21 |
| EP0615249B1 (en) | 1998-03-25 |
| EP0615249A2 (en) | 1994-09-14 |
| TW279983B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1996-07-01 |
| JPH06267297A (ja) | 1994-09-22 |
| DE69409146T2 (de) | 1998-08-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080416 Year of fee payment: 9 |
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| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090416 Year of fee payment: 10 |
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| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100416 Year of fee payment: 11 |
|
| LAPS | Cancellation because of no payment of annual fees |