JP2828942B2 - 半導体メモリの昇圧回路 - Google Patents

半導体メモリの昇圧回路

Info

Publication number
JP2828942B2
JP2828942B2 JP7342653A JP34265395A JP2828942B2 JP 2828942 B2 JP2828942 B2 JP 2828942B2 JP 7342653 A JP7342653 A JP 7342653A JP 34265395 A JP34265395 A JP 34265395A JP 2828942 B2 JP2828942 B2 JP 2828942B2
Authority
JP
Japan
Prior art keywords
circuit
boosting
sensing
signal
control signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP7342653A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08235859A (ja
Inventor
世昇 尹
贊鍾 朴
炳▲ちょる▼ 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sansei Denshi Co Ltd
Original Assignee
Sansei Denshi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansei Denshi Co Ltd filed Critical Sansei Denshi Co Ltd
Publication of JPH08235859A publication Critical patent/JPH08235859A/ja
Application granted granted Critical
Publication of JP2828942B2 publication Critical patent/JP2828942B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
JP7342653A 1994-12-29 1995-12-28 半導体メモリの昇圧回路 Expired - Fee Related JP2828942B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019940038503A KR0137317B1 (ko) 1994-12-29 1994-12-29 반도체 메모리소자의 활성싸이클에서 사용되는 승압회로
KR1994P38503 1994-12-29

Publications (2)

Publication Number Publication Date
JPH08235859A JPH08235859A (ja) 1996-09-13
JP2828942B2 true JP2828942B2 (ja) 1998-11-25

Family

ID=19404725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7342653A Expired - Fee Related JP2828942B2 (ja) 1994-12-29 1995-12-28 半導体メモリの昇圧回路

Country Status (7)

Country Link
JP (1) JP2828942B2 (enrdf_load_stackoverflow)
KR (1) KR0137317B1 (enrdf_load_stackoverflow)
CN (1) CN1045838C (enrdf_load_stackoverflow)
DE (1) DE19547796C2 (enrdf_load_stackoverflow)
FR (1) FR2729020B1 (enrdf_load_stackoverflow)
GB (1) GB2296593B (enrdf_load_stackoverflow)
TW (1) TW282544B (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0142963B1 (ko) * 1995-05-17 1998-08-17 김광호 외부제어신호에 적응 동작하는 승압회로를 갖는 반도체 메모리 장치
KR0172337B1 (ko) * 1995-11-13 1999-03-30 김광호 반도체 메모리장치의 내부승압전원 발생회로
US6094395A (en) * 1998-03-27 2000-07-25 Infineon Technologies North America Corp. Arrangement for controlling voltage generators in multi-voltage generator chips such as DRAMs
CN1299432C (zh) * 2001-10-29 2007-02-07 旺宏电子股份有限公司 减少工作电压与温度所造成的影响的推动电压产生器
KR100846484B1 (ko) 2002-03-14 2008-07-17 삼성전자주식회사 Ｒｍｉｍ 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치
KR100741471B1 (ko) 2006-09-29 2007-07-20 삼성전자주식회사 래치-업이 발생하지 않는 부스팅 스킴
JP5137545B2 (ja) * 2006-12-25 2013-02-06 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
US9502119B2 (en) * 2014-11-20 2016-11-22 Samsung Electronics Co., Ltd. Distributed capacitive delay tracking boost-assist circuit

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63153791A (ja) * 1986-12-17 1988-06-27 Mitsubishi Electric Corp ワ−ド線駆動信号発生回路
US4752699A (en) * 1986-12-19 1988-06-21 International Business Machines Corp. On chip multiple voltage generation using a charge pump and plural feedback sense circuits
KR920010749B1 (ko) * 1989-06-10 1992-12-14 삼성전자 주식회사 반도체 집적소자의 내부전압 변환회로
GB9007791D0 (en) * 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
FR2668668B1 (fr) * 1990-10-30 1994-02-04 Samsung Electronics Co Ltd Generateur de tension de substrat pour un dispositif a semiconducteurs.
US5272676A (en) * 1990-11-20 1993-12-21 Hitachi, Ltd. Semiconductor integrated circuit device
JPH04287418A (ja) * 1991-03-18 1992-10-13 Fujitsu Ltd 半導体集積回路
KR950002015B1 (ko) * 1991-12-23 1995-03-08 삼성전자주식회사 하나의 오실레이터에 의해 동작되는 정전원 발생회로
JPH05174591A (ja) * 1991-12-25 1993-07-13 Sharp Corp チャージポンプ回路
US5329168A (en) * 1991-12-27 1994-07-12 Nec Corporation Semiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sources
JP3179848B2 (ja) * 1992-03-27 2001-06-25 三菱電機株式会社 半導体記憶装置
KR950002726B1 (ko) * 1992-03-30 1995-03-24 삼성전자주식회사 기판전압 발생기의 전하 펌프 회로
US5337284A (en) * 1993-01-11 1994-08-09 United Memories, Inc. High voltage generator having a self-timed clock circuit and charge pump, and a method therefor

Also Published As

Publication number Publication date
CN1045838C (zh) 1999-10-20
DE19547796A1 (de) 1996-07-11
FR2729020B1 (fr) 1998-07-10
TW282544B (enrdf_load_stackoverflow) 1996-08-01
CN1127919A (zh) 1996-07-31
DE19547796C2 (de) 1998-04-16
GB2296593A (en) 1996-07-03
KR960025707A (ko) 1996-07-20
GB2296593B (en) 1997-07-23
GB9526716D0 (en) 1996-02-28
FR2729020A1 (fr) 1996-07-05
JPH08235859A (ja) 1996-09-13
KR0137317B1 (ko) 1998-04-29

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