GB9526716D0 - Boosting voltage circuit for semiconductor memory device - Google Patents

Boosting voltage circuit for semiconductor memory device

Info

Publication number
GB9526716D0
GB9526716D0 GBGB9526716.7A GB9526716A GB9526716D0 GB 9526716 D0 GB9526716 D0 GB 9526716D0 GB 9526716 A GB9526716 A GB 9526716A GB 9526716 D0 GB9526716 D0 GB 9526716D0
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
voltage circuit
boosting voltage
boosting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9526716.7A
Other versions
GB2296593B (en
GB2296593A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9526716D0 publication Critical patent/GB9526716D0/en
Publication of GB2296593A publication Critical patent/GB2296593A/en
Application granted granted Critical
Publication of GB2296593B publication Critical patent/GB2296593B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
GB9526716A 1994-12-29 1995-12-29 Boosting voltage circuit for semiconductor memory device Expired - Lifetime GB2296593B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940038503A KR0137317B1 (en) 1994-12-29 1994-12-29 Boost circuit of semiconductor memory device

Publications (3)

Publication Number Publication Date
GB9526716D0 true GB9526716D0 (en) 1996-02-28
GB2296593A GB2296593A (en) 1996-07-03
GB2296593B GB2296593B (en) 1997-07-23

Family

ID=19404725

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9526716A Expired - Lifetime GB2296593B (en) 1994-12-29 1995-12-29 Boosting voltage circuit for semiconductor memory device

Country Status (7)

Country Link
JP (1) JP2828942B2 (en)
KR (1) KR0137317B1 (en)
CN (1) CN1045838C (en)
DE (1) DE19547796C2 (en)
FR (1) FR2729020B1 (en)
GB (1) GB2296593B (en)
TW (1) TW282544B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0142963B1 (en) * 1995-05-17 1998-08-17 김광호 Semiconductor memory apparatus having the boosting circuit
KR0172337B1 (en) * 1995-11-13 1999-03-30 김광호 Semiconductor memory device
US6094395A (en) * 1998-03-27 2000-07-25 Infineon Technologies North America Corp. Arrangement for controlling voltage generators in multi-voltage generator chips such as DRAMs
CN1299432C (en) * 2001-10-29 2007-02-07 旺宏电子股份有限公司 Drive voltage generator for reducing the effect of work voltage and temperature
KR100846484B1 (en) 2002-03-14 2008-07-17 삼성전자주식회사 Rotation magnetron in magnetron electrode and method of manufacturing the same and sputtering apparatus with the same
KR100741471B1 (en) 2006-09-29 2007-07-20 삼성전자주식회사 Latch-free boosting scheme
JP5137545B2 (en) * 2006-12-25 2013-02-06 株式会社半導体エネルギー研究所 Semiconductor device and driving method thereof
US9502119B2 (en) * 2014-11-20 2016-11-22 Samsung Electronics Co., Ltd. Distributed capacitive delay tracking boost-assist circuit

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63153791A (en) * 1986-12-17 1988-06-27 Mitsubishi Electric Corp Word line drive signal generating circuit
US4752699A (en) * 1986-12-19 1988-06-21 International Business Machines Corp. On chip multiple voltage generation using a charge pump and plural feedback sense circuits
KR920010749B1 (en) * 1989-06-10 1992-12-14 삼성전자 주식회사 Circuit for changeing inner voltage in semiconductor memory device
GB9007791D0 (en) * 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
US5157278A (en) * 1990-10-30 1992-10-20 Samsung Electronics Co., Ltd. Substrate voltage generator for semiconductor device
US5272676A (en) * 1990-11-20 1993-12-21 Hitachi, Ltd. Semiconductor integrated circuit device
JPH04287418A (en) * 1991-03-18 1992-10-13 Fujitsu Ltd Semiconductor integrated circuit
KR950002015B1 (en) * 1991-12-23 1995-03-08 삼성전자주식회사 Static source voltage generating circuit operated by an oscillator
JPH05174591A (en) * 1991-12-25 1993-07-13 Sharp Corp Charge pumping circuit
US5329168A (en) * 1991-12-27 1994-07-12 Nec Corporation Semiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sources
JP3179848B2 (en) * 1992-03-27 2001-06-25 三菱電機株式会社 Semiconductor storage device
KR950002726B1 (en) * 1992-03-30 1995-03-24 삼성전자주식회사 Charge-pump circuit of substrate voltage generator
US5337284A (en) * 1993-01-11 1994-08-09 United Memories, Inc. High voltage generator having a self-timed clock circuit and charge pump, and a method therefor

Also Published As

Publication number Publication date
KR0137317B1 (en) 1998-04-29
GB2296593B (en) 1997-07-23
JP2828942B2 (en) 1998-11-25
KR960025707A (en) 1996-07-20
JPH08235859A (en) 1996-09-13
FR2729020A1 (en) 1996-07-05
TW282544B (en) 1996-08-01
CN1127919A (en) 1996-07-31
DE19547796A1 (en) 1996-07-11
DE19547796C2 (en) 1998-04-16
CN1045838C (en) 1999-10-20
FR2729020B1 (en) 1998-07-10
GB2296593A (en) 1996-07-03

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20151228