GB9201904D0 - Power supply circuit for semiconductor memory device - Google Patents

Power supply circuit for semiconductor memory device

Info

Publication number
GB9201904D0
GB9201904D0 GB929201904A GB9201904A GB9201904D0 GB 9201904 D0 GB9201904 D0 GB 9201904D0 GB 929201904 A GB929201904 A GB 929201904A GB 9201904 A GB9201904 A GB 9201904A GB 9201904 D0 GB9201904 D0 GB 9201904D0
Authority
GB
United Kingdom
Prior art keywords
power supply
memory device
semiconductor memory
supply circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB929201904A
Other versions
GB2260661A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9201904D0 publication Critical patent/GB9201904D0/en
Publication of GB2260661A publication Critical patent/GB2260661A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
GB9201904A 1991-10-16 1992-01-29 Power supply circuit for semiconductor memory device Withdrawn GB2260661A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910018178A KR930008854A (en) 1991-10-16 1991-10-16 Internal Voltage Supply Device of Semiconductor Memory

Publications (2)

Publication Number Publication Date
GB9201904D0 true GB9201904D0 (en) 1992-03-18
GB2260661A GB2260661A (en) 1993-04-21

Family

ID=19321309

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9201904A Withdrawn GB2260661A (en) 1991-10-16 1992-01-29 Power supply circuit for semiconductor memory device

Country Status (6)

Country Link
JP (1) JPH06187780A (en)
KR (1) KR930008854A (en)
DE (1) DE4201163A1 (en)
FR (1) FR2682801A1 (en)
GB (1) GB2260661A (en)
IT (1) IT1258821B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1283502A1 (en) * 1995-07-21 2003-02-12 Siemens AG Österreich Electronic data processing system
KR100576491B1 (en) * 1999-12-23 2006-05-09 주식회사 하이닉스반도체 Dual internal voltage generator
US7573735B2 (en) * 2006-09-08 2009-08-11 Kabushiki Kaisha Toshiba Systems and methods for improving memory reliability
US8004922B2 (en) 2009-06-05 2011-08-23 Nxp B.V. Power island with independent power characteristics for memory and logic
JP5373567B2 (en) * 2009-11-20 2013-12-18 ルネサスエレクトロニクス株式会社 Semiconductor device
KR101698741B1 (en) * 2016-02-03 2017-01-23 주식회사 티에스피글로벌 Memory chip, memory device and memory system comprising the same
KR102176939B1 (en) * 2019-01-30 2020-11-10 강상석 Semiconductor memory module, device having power management unit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760560A (en) * 1985-08-30 1988-07-26 Kabushiki Kaisha Toshiba Random access memory with resistance to crystal lattice memory errors
JP2904276B2 (en) * 1987-02-24 1999-06-14 沖電気工業株式会社 Semiconductor integrated circuit device
KR910005599B1 (en) * 1989-05-01 1991-07-31 삼성전자 주식회사 Power supply voltage converting circuit of high density semiconductor memory device
US5063304A (en) * 1990-04-27 1991-11-05 Texas Instruments Incorporated Integrated circuit with improved on-chip power supply control

Also Published As

Publication number Publication date
ITMI920125A1 (en) 1993-07-24
GB2260661A (en) 1993-04-21
IT1258821B (en) 1996-02-29
FR2682801A1 (en) 1993-04-23
ITMI920125A0 (en) 1992-01-24
DE4201163A1 (en) 1993-04-22
JPH06187780A (en) 1994-07-08
KR930008854A (en) 1993-05-22

Similar Documents

Publication Publication Date Title
KR970002002B1 (en) Semiconductor memory device
EP0509811A3 (en) Semiconductor memory device
GB2261307B (en) Semiconductor memory device including voltage pumping circuit
KR960016104B1 (en) Semiconductor memory device
GB9215392D0 (en) Power supply circuit
EP0295707A3 (en) Semiconductor integrated circuit device having multilayer power supply lines
KR970001894B1 (en) Semiconductor memory device
EP0514679A3 (en) Semiconductor integrated memory device
EP0520788A3 (en) Semiconductor memory devices
GB8925681D0 (en) Supply voltage converter for semiconductor memory device
SG43213A1 (en) Power supply circuit
GB9118624D0 (en) Semiconductor memory devices
KR100251036B1 (en) Semiconductor memory device
EP0517375A3 (en) Semiconductor integrated circuit device
GB2259617B (en) Device for protecting power supply circuit
KR960001785B1 (en) Semiconductor memory device
EP0499460A3 (en) Semiconductor memory device
EP0520425A3 (en) Semiconductor memory device
GB2259406B (en) Semiconductor memory devices
GB9121767D0 (en) Semiconductor memory device
EP0503524A3 (en) Semiconductor memory device
EP0577106A3 (en) Semiconductor memory circuit
GB2253092B (en) Semiconductor memory device
GB9201904D0 (en) Power supply circuit for semiconductor memory device
EP0532305A3 (en) Power supply system for semiconductor chip

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)