KR930008854A - Internal Voltage Supply Device of Semiconductor Memory - Google Patents

Internal Voltage Supply Device of Semiconductor Memory Download PDF

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Publication number
KR930008854A
KR930008854A KR1019910018178A KR910018178A KR930008854A KR 930008854 A KR930008854 A KR 930008854A KR 1019910018178 A KR1019910018178 A KR 1019910018178A KR 910018178 A KR910018178 A KR 910018178A KR 930008854 A KR930008854 A KR 930008854A
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KR
South Korea
Prior art keywords
voltage
level
power supply
circuit
memory cell
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Application number
KR1019910018178A
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Korean (ko)
Inventor
민동선
김영태
한진만
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019910018178A priority Critical patent/KR930008854A/en
Priority to FR9200187A priority patent/FR2682801A1/en
Priority to DE4201163A priority patent/DE4201163A1/en
Priority to ITMI920125A priority patent/IT1258821B/en
Priority to GB9201904A priority patent/GB2260661A/en
Priority to JP4013672A priority patent/JPH06187780A/en
Publication of KR930008854A publication Critical patent/KR930008854A/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

본 발명은 반도체 메모리 장치의 내부 전압공급장치에 있어서, 메모리셀의 특성검사를 위해 외부 전원전압단에 스트레스전압을 인가할 때 주변회로측에는 영향이 가지 않도록 하기 위한 것이다. 이를 위하여 본 발명은 주변회로와 메모리셀 어레이를 가지는 반도체 메모리 장치의 내부 전압공급장치에 있어서, 외부에서 공급되는 전원전압을 소정레벨의 제1전압으로 변환하는 제1기준전압발생단과, 상기 제1전압과 소정레벨의 제2전압을 비교하여 상기 제2전압의 레벨을 결정하는 제2기준전압발생수단과, 상기 제1전압과 소정레벨의 제3전압을 비교하여 상기 제3전압의 레벨을 결정하는 제2기준전압발생수단과, 상기 제1전압과 소정레벨의 제3전압을 비교하여 상기 제3전압의 레벨을 결정하는 제3기준전압발생수단과, 상기 제2전압의 레벨과 상기 주변회로에 사용되는 전워전압의 레벨과 상기 메모리셀 어레이에 사용되는 전원전압의 레벨을 비교하여 상기 메모리셀 어레이에 사용되는 전원 전압의 레벨을 결정하는 어레이 전원구동 회로를 구비함을 특징으로 하는 내부 전압공급장치를 제공한다.The present invention provides an internal voltage supply device for a semiconductor memory device, in which a peripheral circuit side is not affected when a stress voltage is applied to an external power supply voltage terminal for a characteristic test of a memory cell. To this end, the present invention is an internal voltage supply device of a semiconductor memory device having a peripheral circuit and a memory cell array, the first reference voltage generating stage for converting a power supply voltage supplied from the outside into a first voltage of a predetermined level, and the first Second reference voltage generating means for comparing the voltage with the second voltage of the predetermined level to determine the level of the second voltage, and comparing the first voltage with a third voltage of the predetermined level to determine the level of the third voltage. Second reference voltage generating means, third reference voltage generating means for comparing the first voltage with a third voltage of a predetermined level to determine the level of the third voltage, the level of the second voltage and the peripheral circuit And an array power supply driving circuit configured to determine a level of a power supply voltage used in the memory cell array by comparing a level of a power supply voltage used in the memory cell and a power supply voltage used in the memory cell array. It provides an internal voltage supply device characterized in that.

Description

반도체 메모리의 내부전압공급장치Internal Voltage Supply Device of Semiconductor Memory

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 내부전압공급장치의 블록다이어그램.2 is a block diagram of an internal voltage supply device according to the present invention.

제3도는 제2도의 일부의 상세회로도.3 is a detailed circuit diagram of a portion of FIG.

Claims (8)

주변회로와 메모리 셀 어레이로 구성된 반도체 메모리 장치의 내부 전압공급 장치에 있어서, 외부에서 공급되는 전원전압을 기준전압으로 변환시키는 회로가 상기 주변회로와 메모리 셀 어레이의 각각의 독립적으로 구비되어 있음을 특징으로 하는 내부 전압공급장치.An internal voltage supply device of a semiconductor memory device comprising a peripheral circuit and a memory cell array, wherein a circuit for converting an externally supplied power voltage into a reference voltage is provided independently of each of the peripheral circuit and the memory cell array. Internal voltage supply device. 주변회로와 메모리셀 어레이를 가지는 반도체 메모리 장치의 내부 전압공급장치에 있어서, 외부에서 공급되는 전원전압을 소정레벨의 제1전압으로 변환하는 제1기준 전압발생 수단과, 상기 제1전압과 소정레벨의 제1전압을 비교하여 상기 제2저압의 레벨을 결정하는 제2기준 전압발생 수단과, 상기 제1전압과 소정레벨의 제3전압을 비교하여 상기 제3전압의 레벨을 결정하는 제3기준 전압발생 수단과, 상기 제2전압의 레벨과 상기 주변회로에 사용되는 전원전압의 레벨을 비교하여 상기 주변회로에 사용되는 전원전압의 레벨을 결정하는 주변 전원구동 회로와, 상기 제3전압의 레벨과 상기 메모리셀 어레이에 사용되는 전원전압의 레벨을 비교하여 상기 메모리셀 어레이에 사용되는 전원전압의 레벨을 결정하는 어레이 전원구동 회로를 구비함을 특징으로 하는 내부 전압공급장치.An internal voltage supply device of a semiconductor memory device having a peripheral circuit and a memory cell array, comprising: first reference voltage generating means for converting an externally supplied power supply voltage to a first voltage having a predetermined level, the first voltage and a predetermined level; Second reference voltage generating means for comparing the first voltage to determine the level of the second low voltage, and a third reference for determining the level of the third voltage by comparing the first voltage with a third voltage having a predetermined level. A peripheral power supply circuit for comparing the voltage generating means, the level of the second voltage with the level of the power supply voltage used in the peripheral circuit, and determining a level of the power supply voltage used in the peripheral circuit; and the level of the third voltage. And an array power supply driving circuit for comparing the level of the power supply voltage used for the memory cell array to determine the level of the power supply voltage used for the memory cell array. Internal voltage supply apparatus. 제2항에 있어서, 상기 제2기준 전압발생수단 또는 상기 주변전원구동 회로중 어느 하나가 상기 제2전압 또는 상기 주변회로에 허용되는 전원전압을 소정레벨로 분압하는 회로를 최소한 구비함을 특징으로 하는 내부 전압공급장치.3. A circuit according to claim 2, wherein any one of said second reference voltage generating means or said peripheral power supply driving circuit has at least a circuit for dividing a power supply voltage allowed for said second voltage or said peripheral circuit to a predetermined level. Internal voltage supply. 제2항에 있어서, 상기 제3기준 전압발생수단 또는 상기 에러이 전원구동 회로중 어느 하나가 상기 제3전압 또는 상기 메모리셀 어레이에 사용되는 전원전압을 소정레벨로 분압하는 회로를 최소한 구비함을 특징으로 하는 내부 전압공급장치.3. The circuit according to claim 2, wherein at least one of the third reference voltage generating means or the error power supply driving circuit includes a circuit for dividing the third voltage or the power supply voltage used in the memory cell array to a predetermined level. Internal voltage supply device. 제3항 또는 제4항에 있어서, 상기 분압하는 회로가 저항들 또는 모오스트랜지스터들로 구성됨을 특징으로 하는 내부 전압공급장치.5. The internal voltage supply device according to claim 3 or 4, wherein the voltage divider circuit is composed of resistors or MOS transistors. 외부에서 전원전압을 공급받으며 메모리셀 어레이와 주변회로로 구성된 반도체 메모리 장치에 있어서, 상기 외부 전원전압을 제1레벨의 전압으로 변환하여 상기 주변회로로 공급하여 적어도 상기 제1레벨의 전압과 상기 외부 전원전압에 따르는 전압을 비교할 수 있는 수다늘 가지는 제1경로와, 상기 외부 전원전압을 제2레벨의 전압으로 변환하여 상기 메모리셀 어레이로 공급하며 적어도 상기 제2레벨의 전압과 상기 외부 전원전압에 따르는 전압을 비교할 수 있는 수단을 가지는 제2경로를 구비함을 특징으로 하는 내부 전압공급장치.A semiconductor memory device configured to receive a power supply voltage from an external source and comprising a memory cell array and a peripheral circuit, wherein the external power supply voltage is converted into a voltage of a first level and supplied to the peripheral circuit to supply at least the voltage of the first level and the external circuit. It is possible to compare the voltage according to the power supply voltage with the first path, and convert the external power supply voltage into the voltage of the second level and supply it to the memory cell array, and at least to the voltage of the second level and the external power supply voltage. And a second path having means for comparing the following voltages. 제6항에 있어서, 상기 제1경로가 상기 제1레벨의 전압을 소정레벨로 분압할 수 있는 수단을 더 구비함을 특징으로 하는 내부 전압공급장치.7. The internal voltage supply device according to claim 6, wherein said first path further comprises means for dividing the voltage of said first level to a predetermined level. 제6항에 있어서, 상기 제2경로가 상기 제2레벨의 전압을 소정레벨로 분압할 수 있는 수단을 더 구비함을 특징으로 하는 내부 전압공급장치.7. The internal voltage supply device according to claim 6, wherein said second path further comprises means for dividing the voltage of said second level to a predetermined level. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910018178A 1991-10-16 1991-10-16 Internal Voltage Supply Device of Semiconductor Memory KR930008854A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019910018178A KR930008854A (en) 1991-10-16 1991-10-16 Internal Voltage Supply Device of Semiconductor Memory
FR9200187A FR2682801A1 (en) 1991-10-16 1992-01-10 CIRCUIT FOR GENERATING AN INTERNAL CURRENT SUPPLY VOLTAGE IN A SEMICONDUCTOR MEMORY DEVICE.
DE4201163A DE4201163A1 (en) 1991-10-16 1992-01-17 CIRCUIT FOR GENERATING AN INTERNAL SUPPLY VOLTAGE IN A SEMICONDUCTOR MEMORY DEVICE
ITMI920125A IT1258821B (en) 1991-10-16 1992-01-24 CIRCUIT TO GENERATE INTERNAL POWER SUPPLY VOLTAGE IN A SEMICONDUCTOR MEMORY DEVICE
GB9201904A GB2260661A (en) 1991-10-16 1992-01-29 Power supply circuit for semiconductor memory device
JP4013672A JPH06187780A (en) 1991-10-16 1992-01-29 Voltage supply device of internal power supply of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910018178A KR930008854A (en) 1991-10-16 1991-10-16 Internal Voltage Supply Device of Semiconductor Memory

Publications (1)

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KR930008854A true KR930008854A (en) 1993-05-22

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Application Number Title Priority Date Filing Date
KR1019910018178A KR930008854A (en) 1991-10-16 1991-10-16 Internal Voltage Supply Device of Semiconductor Memory

Country Status (6)

Country Link
JP (1) JPH06187780A (en)
KR (1) KR930008854A (en)
DE (1) DE4201163A1 (en)
FR (1) FR2682801A1 (en)
GB (1) GB2260661A (en)
IT (1) IT1258821B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200094274A (en) * 2019-01-30 2020-08-07 강상석 Semiconductor memory module, device having power management unit

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997004375A2 (en) * 1995-07-21 1997-02-06 SIEMENS AKTIENGESELLSCHAFT öSTERREICH Electronic data-processing system
KR100576491B1 (en) * 1999-12-23 2006-05-09 주식회사 하이닉스반도체 Dual internal voltage generator
US7573735B2 (en) * 2006-09-08 2009-08-11 Kabushiki Kaisha Toshiba Systems and methods for improving memory reliability
US8004922B2 (en) 2009-06-05 2011-08-23 Nxp B.V. Power island with independent power characteristics for memory and logic
JP5373567B2 (en) * 2009-11-20 2013-12-18 ルネサスエレクトロニクス株式会社 Semiconductor device
KR101698741B1 (en) * 2016-02-03 2017-01-23 주식회사 티에스피글로벌 Memory chip, memory device and memory system comprising the same

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US4760560A (en) * 1985-08-30 1988-07-26 Kabushiki Kaisha Toshiba Random access memory with resistance to crystal lattice memory errors
JP2904276B2 (en) * 1987-02-24 1999-06-14 沖電気工業株式会社 Semiconductor integrated circuit device
KR910005599B1 (en) * 1989-05-01 1991-07-31 삼성전자 주식회사 Power supply voltage converting circuit of high density semiconductor memory device
US5063304A (en) * 1990-04-27 1991-11-05 Texas Instruments Incorporated Integrated circuit with improved on-chip power supply control

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200094274A (en) * 2019-01-30 2020-08-07 강상석 Semiconductor memory module, device having power management unit

Also Published As

Publication number Publication date
ITMI920125A1 (en) 1993-07-24
FR2682801A1 (en) 1993-04-23
ITMI920125A0 (en) 1992-01-24
IT1258821B (en) 1996-02-29
GB2260661A (en) 1993-04-21
JPH06187780A (en) 1994-07-08
DE4201163A1 (en) 1993-04-22
GB9201904D0 (en) 1992-03-18

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