KR930020847A - Reference current generating circuit - Google Patents

Reference current generating circuit Download PDF

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Publication number
KR930020847A
KR930020847A KR1019920004658A KR920004658A KR930020847A KR 930020847 A KR930020847 A KR 930020847A KR 1019920004658 A KR1019920004658 A KR 1019920004658A KR 920004658 A KR920004658 A KR 920004658A KR 930020847 A KR930020847 A KR 930020847A
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KR
South Korea
Prior art keywords
voltage
mos transistor
electrode connected
mos
reference current
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KR1019920004658A
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Korean (ko)
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KR940005510B1 (en
Inventor
이재형
이동재
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김광호
삼성전자 주식회사
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Priority to KR1019920004658A priority Critical patent/KR940005510B1/en
Priority to CN92103104A priority patent/CN1065532A/en
Priority to FR9205216A priority patent/FR2688903B1/en
Priority to ITMI921016A priority patent/IT1254947B/en
Priority to GB9209400A priority patent/GB2265479A/en
Priority to DE4214403A priority patent/DE4214403A1/en
Priority to JP4123528A priority patent/JPH0675648A/en
Publication of KR930020847A publication Critical patent/KR930020847A/en
Application granted granted Critical
Publication of KR940005510B1 publication Critical patent/KR940005510B1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
  • Amplifiers (AREA)

Abstract

본 발명은 기준전류 발생회로를 공개한다. 그 회로는 제1전압과 제2전압 사이에 연결되어 일정전압을 제공하기 위한 전압 공급 수단과 일정전압과 제2전압 사이에 연결된 제1MOS 트랜지스터와 제1전압과 제2전압사이에 연결된 제1MOS다이오우드수단과 상기 일정전압에 의해서 온되고 상기 MOS저항수단을 통한 전압에 의해서 상기 제1MOS 트랜지스터를 온하기 위한 제2MOS트랜지스터와 상기 제2MOS트랜지스터와 상기 제2전압사이에 연결된 저항수단과 제2MOS다이오드수단을 구비하여 상기 제1MOS 트랜지스터의 스레쉬홀드 전압에서 상기 제2MOS다이오우드수단의 스레쉬홀드 전압을 뺀값을 상기 저항수단의 저항값으로 나눈 일정전류를 출력한다. 따라서, 온도 및 공정 변화에 둔감한 기준 전류를 출력할수 있게된다.The present invention discloses a reference current generating circuit. The circuit comprises a voltage supply means connected between a first voltage and a second voltage to provide a constant voltage, a first MOS transistor connected between the constant voltage and the second voltage, and a first MOS diode connected between the first voltage and the second voltage. A second MOS transistor, a resistance means connected between the second MOS transistor and the second voltage for turning on the first MOS transistor by means of the constant voltage and the voltage through the MOS resistance means; And output a constant current obtained by dividing the threshold voltage of the first MOS transistor by the value obtained by subtracting the threshold voltage of the second MOS diode unit by the resistance value of the resistor unit. Thus, it is possible to output a reference current insensitive to temperature and process changes.

Description

기준전류 발생회로Reference current generating circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 반도체 장치의 기준 전류 발생회로의 개념을 나타내는 것이다.2 shows the concept of the reference current generating circuit of the semiconductor device according to the present invention.

제3도는 본 발명에 따른 일실시예의 반도체 장치의 기준 전류 발생회로를 나타내는 것이다.3 shows a reference current generating circuit of a semiconductor device of one embodiment according to the present invention.

제4도는 본 발명에 따른 반도체 장치의 기준전류발생회로를 나타내는 것이다.4 shows a reference current generating circuit of a semiconductor device according to the present invention.

Claims (7)

제1전압과 제2전압사이에 저항성분과 MOS트랜지스터로 구성되어 일정한 전압을 출력하는 전압발생수단과 상기 일정전압과 상기 제2전압사이에 저항성분과 MOS다이오우드를 연결하여 상기 일정전압을 상기 MOS 트랜지스터의 스레쉬홀드전압을 뺀값을 상기 저항성분의 저항값으로 나눈 일정전류를 출력하는 것을 특징으로 하는 기준전류회로.A voltage generation means configured to output a constant voltage between the first voltage and the second voltage and a MOS transistor, and connecting the resistance component and the MOS diode between the constant voltage and the second voltage to supply the constant voltage to the MOS transistor. A reference current circuit, comprising: outputting a constant current obtained by dividing a value obtained by subtracting a threshold hold voltage by a resistance value of the resistance component. 제1항에 있어서, 상기 전압발생수단은 제1전압에 연결된 소오스전극과 제2전압에 연결된 게이트전극을 가진 제1MOS트랜지스터, 상기 제1MOS트랜지스터의 드래인 전극에 연결된 드레인 전극과 제2전압에 연결된 소오스 전극을 가진 제2MOS트랜지스터, 제1전압에 연결된 소오스전극과 드레인 전극과 공통연결된 소오스전극을 가진 제3MOS트랜지스터, 상기 제3MOS트랜지스터의 게이트전극에 연결된 드레인전극과 상기 제2MOS트랜지스터의 드레인전극에 연결된 게이트전극과 상기 제2MOS트랜지스터의 게이트 전극에 연결된 소오스전극을 가진 제4MOS트랜지스터로 구성된 것을 특징으로 하는 기준전류회로.2. The voltage generator of claim 1, wherein the voltage generating means comprises: a first MOS transistor having a source electrode connected to a first voltage and a gate electrode connected to a second voltage, and a drain electrode connected to a drain electrode of the first MOS transistor and a second voltage; A second MOS transistor having a source electrode, a third MOS transistor having a source electrode connected in common with a source electrode and a drain electrode connected to the first voltage, a drain electrode connected to a gate electrode of the third MOS transistor, and a drain electrode of the second MOS transistor And a fourth MOS transistor having a gate electrode and a source electrode connected to the gate electrode of the second MOS transistor. 제1항에 있어서, 상기 MOS다이오우드수단은 상기 저항수단에 연결된 드레인 전극과 게이트전극과 상기 제2전압에 연결된 소오스전극을 가진 것을 특징으로 하는 기준전류회로.The reference current circuit according to claim 1, wherein said MOS diode means has a drain electrode connected to said resistance means, a gate electrode, and a source electrode connected to said second voltage. 제1항에 있어서, 상기 MOS다이오우드수단은 상기 저항수단에 연결된 드레인전극과 게이트전극과 상기 제2전압과 기판에 연결된 소오스전극을 가진 것을 특징으로 하는 기준전류회로.The reference current circuit according to claim 1, wherein the MOS diode means has a drain electrode and a gate electrode connected to the resistance means, and a source electrode connected to the second voltage and the substrate. 제1항에 있어서, 상기 MOS 다이오우드수단은 상기 저항수단에 연결된 소오스전극과 게이트전극을 가진 제1NMOS트랜지스터와 상기 제1NMOS트랜지스터의 소오스전극과 기판에 연결된 소오스전극과 제2전압에 연결된 드레인전극과 게이트전극을 가진 제2PMOS트랜지스터로 구성된 것을 특징으로 하는 기준전류회로.The semiconductor device of claim 1, wherein the MOS diode means comprises: a first NMOS transistor having a source electrode and a gate electrode connected to the resistance means, a source electrode of the first NMOS transistor, a source electrode connected to a substrate, and a drain electrode and a gate connected to a second voltage; A reference current circuit comprising a second PMOS transistor with electrodes. 제1항에 있어서, 상기 일정전압이 상기 MOS다이오우드수단의 스레쉬홀드전압보다 큰 것을 특징으로 하는 기준전류회로.The reference current circuit according to claim 1, wherein the constant voltage is larger than the threshold voltage of the MOS diode means. 제1항에 있어서, 상기 일정전압이 상기 MOS다이오우드수단의 스레쉬홀드전압 차이를 역 바이어스전압 차이로 조절하는 것을 특징으로 하는 기준전류회로.2. The reference current circuit according to claim 1, wherein the constant voltage adjusts a difference in threshold voltage of the MOS diode means to a difference in reverse bias voltage. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920004658A 1992-03-20 1992-03-20 Reference current generating circuit KR940005510B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019920004658A KR940005510B1 (en) 1992-03-20 1992-03-20 Reference current generating circuit
CN92103104A CN1065532A (en) 1992-03-20 1992-04-28 Reference current generating circuit
FR9205216A FR2688903B1 (en) 1992-03-20 1992-04-28 REFERENCE CURRENT GENERATION CIRCUIT.
ITMI921016A IT1254947B (en) 1992-03-20 1992-04-29 REFERENCE CURRENT GENERATOR CIRCUIT
GB9209400A GB2265479A (en) 1992-03-20 1992-04-30 Reference current generating circuit
DE4214403A DE4214403A1 (en) 1992-03-20 1992-04-30 REFERENCE CURRENT GENERATOR CIRCUIT
JP4123528A JPH0675648A (en) 1992-03-20 1992-05-15 Reference-current generating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920004658A KR940005510B1 (en) 1992-03-20 1992-03-20 Reference current generating circuit

Publications (2)

Publication Number Publication Date
KR930020847A true KR930020847A (en) 1993-10-20
KR940005510B1 KR940005510B1 (en) 1994-06-20

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Application Number Title Priority Date Filing Date
KR1019920004658A KR940005510B1 (en) 1992-03-20 1992-03-20 Reference current generating circuit

Country Status (7)

Country Link
JP (1) JPH0675648A (en)
KR (1) KR940005510B1 (en)
CN (1) CN1065532A (en)
DE (1) DE4214403A1 (en)
FR (1) FR2688903B1 (en)
GB (1) GB2265479A (en)
IT (1) IT1254947B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102342B2 (en) 2004-01-07 2006-09-05 Samsung Electronics, Co., Ltd. Current reference circuit with voltage-to-current converter having auto-tuning function

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
FR2829248B1 (en) 2001-09-03 2004-08-27 St Microelectronics Sa CURRENT GENERATOR FOR LOW SUPPLY VOLTAGE
JP4932322B2 (en) * 2006-05-17 2012-05-16 オンセミコンダクター・トレーディング・リミテッド Oscillator circuit
JP4989106B2 (en) * 2006-05-17 2012-08-01 オンセミコンダクター・トレーディング・リミテッド Oscillator circuit
JP5771489B2 (en) * 2011-09-15 2015-09-02 ルネサスエレクトロニクス株式会社 Semiconductor device
CN102385409B (en) * 2011-10-14 2013-12-04 中国科学院电子学研究所 VGS/R (Voltage Gradient Standard/Reference) type reference source capable of supplying zero-temperature coefficient voltage and current reference at the same time
JP6292901B2 (en) * 2014-01-27 2018-03-14 エイブリック株式会社 Reference voltage circuit
CN107666143B (en) * 2016-07-27 2019-03-22 帝奥微电子有限公司 Negative pressure charge pump circuit
CN106774593A (en) * 2016-12-29 2017-05-31 北京兆易创新科技股份有限公司 A kind of current source
CN107015594A (en) * 2017-05-30 2017-08-04 长沙方星腾电子科技有限公司 A kind of bias current generating circuit

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JPS5249139B2 (en) * 1974-09-04 1977-12-15
IT1179823B (en) * 1984-11-22 1987-09-16 Cselt Centro Studi Lab Telecom DIFFERENTIAL REFERENCE VOLTAGE GENERATOR FOR SINGLE POWER INTEGRATED CIRCUITS IN NMOS TECHNOLOGY
JPS62188255A (en) * 1986-02-13 1987-08-17 Toshiba Corp Reference voltage generating circuit
JPS63316114A (en) * 1987-06-18 1988-12-23 Sony Corp Reference voltage generating circuit
US4970415A (en) * 1989-07-18 1990-11-13 Gazelle Microcircuits, Inc. Circuit for generating reference voltages and reference currents
JP2804162B2 (en) * 1989-09-08 1998-09-24 株式会社日立製作所 Constant current constant voltage circuit
JP2809768B2 (en) * 1989-11-30 1998-10-15 株式会社東芝 Reference potential generation circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102342B2 (en) 2004-01-07 2006-09-05 Samsung Electronics, Co., Ltd. Current reference circuit with voltage-to-current converter having auto-tuning function

Also Published As

Publication number Publication date
CN1065532A (en) 1992-10-21
JPH0675648A (en) 1994-03-18
ITMI921016A0 (en) 1992-04-29
GB9209400D0 (en) 1992-06-17
FR2688903B1 (en) 1994-06-03
ITMI921016A1 (en) 1993-10-29
KR940005510B1 (en) 1994-06-20
IT1254947B (en) 1995-10-11
FR2688903A1 (en) 1993-09-24
GB2265479A (en) 1993-09-29
DE4214403A1 (en) 1993-09-23

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