FR2688903B1 - REFERENCE CURRENT GENERATION CIRCUIT. - Google Patents
REFERENCE CURRENT GENERATION CIRCUIT.Info
- Publication number
- FR2688903B1 FR2688903B1 FR9205216A FR9205216A FR2688903B1 FR 2688903 B1 FR2688903 B1 FR 2688903B1 FR 9205216 A FR9205216 A FR 9205216A FR 9205216 A FR9205216 A FR 9205216A FR 2688903 B1 FR2688903 B1 FR 2688903B1
- Authority
- FR
- France
- Prior art keywords
- generation circuit
- reference current
- current generation
- circuit
- generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Automation & Control Theory (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Control Of Electrical Variables (AREA)
- Dram (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920004658A KR940005510B1 (en) | 1992-03-20 | 1992-03-20 | Reference current generating circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2688903A1 FR2688903A1 (en) | 1993-09-24 |
FR2688903B1 true FR2688903B1 (en) | 1994-06-03 |
Family
ID=19330693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9205216A Expired - Fee Related FR2688903B1 (en) | 1992-03-20 | 1992-04-28 | REFERENCE CURRENT GENERATION CIRCUIT. |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPH0675648A (en) |
KR (1) | KR940005510B1 (en) |
CN (1) | CN1065532A (en) |
DE (1) | DE4214403A1 (en) |
FR (1) | FR2688903B1 (en) |
GB (1) | GB2265479A (en) |
IT (1) | IT1254947B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2829248B1 (en) * | 2001-09-03 | 2004-08-27 | St Microelectronics Sa | CURRENT GENERATOR FOR LOW SUPPLY VOLTAGE |
KR100588339B1 (en) | 2004-01-07 | 2006-06-09 | 삼성전자주식회사 | Current reference circuit with voltage-current converter having auto-tuning function |
JP4932322B2 (en) * | 2006-05-17 | 2012-05-16 | オンセミコンダクター・トレーディング・リミテッド | Oscillator circuit |
JP4989106B2 (en) * | 2006-05-17 | 2012-08-01 | オンセミコンダクター・トレーディング・リミテッド | Oscillator circuit |
JP5771489B2 (en) * | 2011-09-15 | 2015-09-02 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
CN102385409B (en) * | 2011-10-14 | 2013-12-04 | 中国科学院电子学研究所 | VGS/R (Voltage Gradient Standard/Reference) type reference source capable of supplying zero-temperature coefficient voltage and current reference at the same time |
JP6292901B2 (en) * | 2014-01-27 | 2018-03-14 | エイブリック株式会社 | Reference voltage circuit |
CN107666143B (en) * | 2016-07-27 | 2019-03-22 | 帝奥微电子有限公司 | Negative pressure charge pump circuit |
CN106774593A (en) * | 2016-12-29 | 2017-05-31 | 北京兆易创新科技股份有限公司 | A kind of current source |
CN107015594A (en) * | 2017-05-30 | 2017-08-04 | 长沙方星腾电子科技有限公司 | A kind of bias current generating circuit |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5249139B2 (en) * | 1974-09-04 | 1977-12-15 | ||
IT1179823B (en) * | 1984-11-22 | 1987-09-16 | Cselt Centro Studi Lab Telecom | DIFFERENTIAL REFERENCE VOLTAGE GENERATOR FOR SINGLE POWER INTEGRATED CIRCUITS IN NMOS TECHNOLOGY |
JPS62188255A (en) * | 1986-02-13 | 1987-08-17 | Toshiba Corp | Reference voltage generating circuit |
JPS63316114A (en) * | 1987-06-18 | 1988-12-23 | Sony Corp | Reference voltage generating circuit |
US4970415A (en) * | 1989-07-18 | 1990-11-13 | Gazelle Microcircuits, Inc. | Circuit for generating reference voltages and reference currents |
JP2804162B2 (en) * | 1989-09-08 | 1998-09-24 | 株式会社日立製作所 | Constant current constant voltage circuit |
JP2809768B2 (en) * | 1989-11-30 | 1998-10-15 | 株式会社東芝 | Reference potential generation circuit |
-
1992
- 1992-03-20 KR KR1019920004658A patent/KR940005510B1/en active IP Right Grant
- 1992-04-28 FR FR9205216A patent/FR2688903B1/en not_active Expired - Fee Related
- 1992-04-28 CN CN92103104A patent/CN1065532A/en active Pending
- 1992-04-29 IT ITMI921016A patent/IT1254947B/en active IP Right Grant
- 1992-04-30 GB GB9209400A patent/GB2265479A/en not_active Withdrawn
- 1992-04-30 DE DE4214403A patent/DE4214403A1/en not_active Ceased
- 1992-05-15 JP JP4123528A patent/JPH0675648A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR940005510B1 (en) | 1994-06-20 |
JPH0675648A (en) | 1994-03-18 |
GB2265479A (en) | 1993-09-29 |
ITMI921016A1 (en) | 1993-10-29 |
CN1065532A (en) | 1992-10-21 |
FR2688903A1 (en) | 1993-09-24 |
IT1254947B (en) | 1995-10-11 |
GB9209400D0 (en) | 1992-06-17 |
DE4214403A1 (en) | 1993-09-23 |
ITMI921016A0 (en) | 1992-04-29 |
KR930020847A (en) | 1993-10-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |