GB2296593B - Boosting voltage circuit for semiconductor memory device - Google Patents

Boosting voltage circuit for semiconductor memory device

Info

Publication number
GB2296593B
GB2296593B GB9526716A GB9526716A GB2296593B GB 2296593 B GB2296593 B GB 2296593B GB 9526716 A GB9526716 A GB 9526716A GB 9526716 A GB9526716 A GB 9526716A GB 2296593 B GB2296593 B GB 2296593B
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
voltage circuit
boosting voltage
boosting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9526716A
Other languages
English (en)
Other versions
GB2296593A (en
GB9526716D0 (en
Inventor
Sei-Seung Yoon
Chan-Jong Park
Byung-Chul Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9526716D0 publication Critical patent/GB9526716D0/en
Publication of GB2296593A publication Critical patent/GB2296593A/en
Application granted granted Critical
Publication of GB2296593B publication Critical patent/GB2296593B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
GB9526716A 1994-12-29 1995-12-29 Boosting voltage circuit for semiconductor memory device Expired - Lifetime GB2296593B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940038503A KR0137317B1 (ko) 1994-12-29 1994-12-29 반도체 메모리소자의 활성싸이클에서 사용되는 승압회로

Publications (3)

Publication Number Publication Date
GB9526716D0 GB9526716D0 (en) 1996-02-28
GB2296593A GB2296593A (en) 1996-07-03
GB2296593B true GB2296593B (en) 1997-07-23

Family

ID=19404725

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9526716A Expired - Lifetime GB2296593B (en) 1994-12-29 1995-12-29 Boosting voltage circuit for semiconductor memory device

Country Status (7)

Country Link
JP (1) JP2828942B2 (enrdf_load_stackoverflow)
KR (1) KR0137317B1 (enrdf_load_stackoverflow)
CN (1) CN1045838C (enrdf_load_stackoverflow)
DE (1) DE19547796C2 (enrdf_load_stackoverflow)
FR (1) FR2729020B1 (enrdf_load_stackoverflow)
GB (1) GB2296593B (enrdf_load_stackoverflow)
TW (1) TW282544B (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0142963B1 (ko) * 1995-05-17 1998-08-17 김광호 외부제어신호에 적응 동작하는 승압회로를 갖는 반도체 메모리 장치
KR0172337B1 (ko) * 1995-11-13 1999-03-30 김광호 반도체 메모리장치의 내부승압전원 발생회로
US6094395A (en) * 1998-03-27 2000-07-25 Infineon Technologies North America Corp. Arrangement for controlling voltage generators in multi-voltage generator chips such as DRAMs
CN1299432C (zh) * 2001-10-29 2007-02-07 旺宏电子股份有限公司 减少工作电压与温度所造成的影响的推动电压产生器
KR100846484B1 (ko) 2002-03-14 2008-07-17 삼성전자주식회사 Ｒｍｉｍ 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치
KR100741471B1 (ko) 2006-09-29 2007-07-20 삼성전자주식회사 래치-업이 발생하지 않는 부스팅 스킴
JP5137545B2 (ja) * 2006-12-25 2013-02-06 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法
US9502119B2 (en) * 2014-11-20 2016-11-22 Samsung Electronics Co., Ltd. Distributed capacitive delay tracking boost-assist circuit

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0271686A2 (en) * 1986-12-19 1988-06-22 International Business Machines Corporation On chip multi-level voltage generation system
GB2232829A (en) * 1989-06-10 1990-12-19 Samsung Electronics Co Ltd An internal voltage converter in a semiconductor integrated circuit
GB2244392A (en) * 1990-04-06 1991-11-27 Mosaid Inc High voltage boosted word line supply charge pump and regulator for dram
GB2249412A (en) * 1990-10-30 1992-05-06 Samsung Electronics Co Ltd Substrate voltage generator for a semiconductor device
GB2262821A (en) * 1991-12-23 1993-06-30 Samsung Electronics Co Ltd Dual voltage generator
GB2265770A (en) * 1992-03-30 1993-10-06 Samsung Electronics Co Ltd Charge pump circuit
US5329168A (en) * 1991-12-27 1994-07-12 Nec Corporation Semiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sources

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63153791A (ja) * 1986-12-17 1988-06-27 Mitsubishi Electric Corp ワ−ド線駆動信号発生回路
US5272676A (en) * 1990-11-20 1993-12-21 Hitachi, Ltd. Semiconductor integrated circuit device
JPH04287418A (ja) * 1991-03-18 1992-10-13 Fujitsu Ltd 半導体集積回路
JPH05174591A (ja) * 1991-12-25 1993-07-13 Sharp Corp チャージポンプ回路
JP3179848B2 (ja) * 1992-03-27 2001-06-25 三菱電機株式会社 半導体記憶装置
US5337284A (en) * 1993-01-11 1994-08-09 United Memories, Inc. High voltage generator having a self-timed clock circuit and charge pump, and a method therefor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0271686A2 (en) * 1986-12-19 1988-06-22 International Business Machines Corporation On chip multi-level voltage generation system
GB2232829A (en) * 1989-06-10 1990-12-19 Samsung Electronics Co Ltd An internal voltage converter in a semiconductor integrated circuit
GB2244392A (en) * 1990-04-06 1991-11-27 Mosaid Inc High voltage boosted word line supply charge pump and regulator for dram
GB2249412A (en) * 1990-10-30 1992-05-06 Samsung Electronics Co Ltd Substrate voltage generator for a semiconductor device
GB2262821A (en) * 1991-12-23 1993-06-30 Samsung Electronics Co Ltd Dual voltage generator
US5329168A (en) * 1991-12-27 1994-07-12 Nec Corporation Semiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sources
GB2265770A (en) * 1992-03-30 1993-10-06 Samsung Electronics Co Ltd Charge pump circuit

Also Published As

Publication number Publication date
CN1045838C (zh) 1999-10-20
DE19547796A1 (de) 1996-07-11
FR2729020B1 (fr) 1998-07-10
TW282544B (enrdf_load_stackoverflow) 1996-08-01
CN1127919A (zh) 1996-07-31
DE19547796C2 (de) 1998-04-16
GB2296593A (en) 1996-07-03
KR960025707A (ko) 1996-07-20
JP2828942B2 (ja) 1998-11-25
GB9526716D0 (en) 1996-02-28
FR2729020A1 (fr) 1996-07-05
JPH08235859A (ja) 1996-09-13
KR0137317B1 (ko) 1998-04-29

Similar Documents

Publication Publication Date Title
EP0643393A3 (en) Semiconductor memory device with voltage boost circuit.
GB2261307B (en) Semiconductor memory device including voltage pumping circuit
GB9423036D0 (en) An integrated circuit memory device
GB9423038D0 (en) An integrated circuit memory device with voltage boost
EP0782141A3 (en) Voltage pumping circuit for semiconductor memory device
GB2296986B (en) A semiconductor memory device including boosting voltage generators
GB2287112B (en) Auto-precharging semiconductor memory devices
GB8925681D0 (en) Supply voltage converter for semiconductor memory device
GB2306719B (en) High voltage generation circuit for semiconductor memory device
GB2324915B (en) High voltage generating circuit for volatile semiconductor memories
GB2320778B (en) Semiconductor memory device
EP0720170A3 (en) Improved voltage multiplier incorporated on the chip for semiconductor memories
GB9423035D0 (en) Voltage boost circuit for a memory device
GB2307997B (en) An integrated circuit memory device
GB2296593B (en) Boosting voltage circuit for semiconductor memory device
GB2301211B (en) Voltage boosting circuits
EP0577106A3 (en) Semiconductor memory circuit
GB9520765D0 (en) Voltage boosting circuit
GB2293245B (en) Back bias voltage detection circuit for semiconductor memory device
GB2302973B (en) Data bus drive circuit for semiconductor memory device
DE69626704D1 (de) Halbleiterhochspannungskurzschlussschaltung
GB2300283B (en) Semiconductor memory device including source voltage generating circuit
GB9201904D0 (en) Power supply circuit for semiconductor memory device
GB2318896B (en) Semiconductor memory device
EP0717412A3 (en) Semiconductor memory device

Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20151228