JP2641809B2 - Ｃｃｄ映像素子 - Google Patents
Ｃｃｄ映像素子Info
- Publication number
- JP2641809B2 JP2641809B2 JP3107229A JP10722991A JP2641809B2 JP 2641809 B2 JP2641809 B2 JP 2641809B2 JP 3107229 A JP3107229 A JP 3107229A JP 10722991 A JP10722991 A JP 10722991A JP 2641809 B2 JP2641809 B2 JP 2641809B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- conductivity type
- bccd
- smear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 21
- 238000005468 ion implantation Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1990-6730 | 1990-05-11 | ||
| KR1019900006730A KR920007355B1 (ko) | 1990-05-11 | 1990-05-11 | Ccd영상 소자의 구조 및 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0774334A JPH0774334A (ja) | 1995-03-17 |
| JP2641809B2 true JP2641809B2 (ja) | 1997-08-20 |
Family
ID=19298928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3107229A Expired - Lifetime JP2641809B2 (ja) | 1990-05-11 | 1991-05-13 | Ｃｃｄ映像素子 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2641809B2 (ko) |
| KR (1) | KR920007355B1 (ko) |
| DE (1) | DE4115060C2 (ko) |
| FR (1) | FR2662852B1 (ko) |
| GB (1) | GB2245423B (ko) |
| NL (1) | NL9100825A (ko) |
| RU (1) | RU2025830C1 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960002645B1 (ko) * | 1992-04-03 | 1996-02-24 | 엘지반도체주식회사 | 전하 전송장치 및 고체 촬상장치 |
| KR0130959B1 (ko) * | 1992-06-03 | 1998-04-14 | 쓰지 하루오 | 고체촬상장치 및 그 제조방법 |
| DE4329838B4 (de) * | 1993-09-03 | 2005-09-22 | Hynix Semiconductor Inc., Ichon | Festkörper-Bildsensor |
| JP2003248097A (ja) | 2002-02-25 | 2003-09-05 | Konica Corp | 放射線画像変換パネル及び放射線画像変換パネルの製造方法 |
| JP4752926B2 (ja) * | 2009-02-05 | 2011-08-17 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、電子機器 |
| JP5375141B2 (ja) * | 2009-02-05 | 2013-12-25 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
| JP5375142B2 (ja) * | 2009-02-05 | 2013-12-25 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法、及び電子機器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4527182A (en) * | 1980-09-19 | 1985-07-02 | Nippon Electric Co., Ltd. | Semiconductor photoelectric converter making excessive charges flow vertically |
| JPS5819080A (ja) * | 1981-07-27 | 1983-02-03 | Sony Corp | 固体撮像素子 |
| JPH0614544B2 (ja) * | 1983-10-03 | 1994-02-23 | 松下電子工業株式会社 | 固体撮像装置の製造方法 |
| JPS60169165A (ja) * | 1984-02-10 | 1985-09-02 | Hitachi Ltd | 固体撮像素子 |
| JP2610010B2 (ja) * | 1984-02-29 | 1997-05-14 | ソニー株式会社 | 縦形オーバーフローイメージセンサー |
| JPS6156583A (ja) * | 1984-08-27 | 1986-03-22 | Sharp Corp | 固体撮像装置 |
| JPH07107928B2 (ja) * | 1986-03-25 | 1995-11-15 | ソニー株式会社 | 固体撮像装置 |
| JP2573582B2 (ja) * | 1986-09-05 | 1997-01-22 | 日本電気株式会社 | 固体撮像子の製造方法 |
| JPH07120774B2 (ja) * | 1986-12-05 | 1995-12-20 | 松下電子工業株式会社 | 固体撮像装置 |
| JPH01207964A (ja) * | 1988-02-16 | 1989-08-21 | Oki Electric Ind Co Ltd | 固体撮像素子 |
-
1990
- 1990-05-11 KR KR1019900006730A patent/KR920007355B1/ko not_active IP Right Cessation
-
1991
- 1991-05-08 RU SU4895484/25A patent/RU2025830C1/ru active
- 1991-05-08 DE DE4115060A patent/DE4115060C2/de not_active Expired - Lifetime
- 1991-05-10 GB GB9109966A patent/GB2245423B/en not_active Expired - Lifetime
- 1991-05-10 FR FR9105703A patent/FR2662852B1/fr not_active Expired - Lifetime
- 1991-05-13 JP JP3107229A patent/JP2641809B2/ja not_active Expired - Lifetime
- 1991-05-13 NL NL9100825A patent/NL9100825A/nl unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2245423A (en) | 1992-01-02 |
| FR2662852A1 (fr) | 1991-12-06 |
| JPH0774334A (ja) | 1995-03-17 |
| GB9109966D0 (en) | 1991-07-03 |
| FR2662852B1 (fr) | 1996-12-27 |
| DE4115060C2 (de) | 1997-07-31 |
| GB2245423B (en) | 1994-02-02 |
| KR920007355B1 (ko) | 1992-08-31 |
| KR910020919A (ko) | 1991-12-20 |
| RU2025830C1 (ru) | 1994-12-30 |
| NL9100825A (nl) | 1991-12-02 |
| DE4115060A1 (de) | 1991-12-19 |
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