GB2245423A - Structure and method for fabrication of a CCD image sensor - Google Patents
Structure and method for fabrication of a CCD image sensor Download PDFInfo
- Publication number
- GB2245423A GB2245423A GB9109966A GB9109966A GB2245423A GB 2245423 A GB2245423 A GB 2245423A GB 9109966 A GB9109966 A GB 9109966A GB 9109966 A GB9109966 A GB 9109966A GB 2245423 A GB2245423 A GB 2245423A
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- 238000000034 method Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 150000002500 ions Chemical class 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 101000608653 Homo sapiens UbiA prenyltransferase domain-containing protein 1 Proteins 0.000 description 2
- 201000004224 Schnyder corneal dystrophy Diseases 0.000 description 2
- 102100039547 UbiA prenyltransferase domain-containing protein 1 Human genes 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
A CCD image sensor includes an n-type photo diode (15,18) and an n-type BCCD (16) supported by a p-type epitaxial layer (14) on an n-type substrate (11). An n-type region (12) for controlling an OFD voltage is disposed between the n-type substrate and the p-type epitaxial layer beneath the n-type photo diode. A p<+>-type region (13) for reducing the smear phenomenon is disposed between the n-type substrate and the p-type epitaxial layer beneath the n-type BCCD. These regions are spaced apart horizontally to provide a path for smear charge to the n-type substrate. <IMAGE>
Description
STRUCTURE AND METHOD FOR FABRICATION OF A CCD IMAGE SENSOR
BACKGROUND OF THE INVENTION
The present invention relates to an improved structure and a method for fabrication of a CCD image sensor for reducing a smear noise.
In general, a CCD(charge Coupled Device) image sensor has a struc
ture that a p-type well is formed on an n-type substate and an n-type photo diode and an n-type VCCD(Vertical Charge Coupled Device)are formed on a p-type well at a designated interval and a transfer gate for connecting said n-type photo diode and said n-type VCCD is formed over the surface of region between them and said n-type BCCD.
In said CCD image sensor, an n-type VCCD may be substituted for
BCCD(Buried Charge Coupled Device) or SCCD(Surface Charge Coupled Device).
Now, but SCCD is almost out of use.
In a CCD image sensor of the aforesaid conventional structure, to reduce the blooming phenomenon appearing on screen, anti-blooming bias for controlling an OFD(Over Flouts Drain) voltage is ordinary applied to region under said n-type photo diode.
Thus, A designated potential barrier is formed to prevent a signal stored in potential well overfolw.
Method for controlling an OFD voltage is HOFD(Horizontal Over Flow
Drain) method and VOFD(Vertical Over Flow Drain) method.
However, because HOFD method is clocking method, VCCD corresponding to each photo diode should be arranged in a line. Accordingly open area of a photo diode is relatively reduced and fill factor is decreased and therefore the sensitivity of a CCD image sensor is lowered.
Now, VOFD method is used for method for controlling an OFD voltege.
In said VOFD method, a shallow p-type well of a fitting depth is formed under photo diode region and a deep p-type well of a fitting depth is formed under the other region by implanting ions twice so that the adequate anti-blooming bias should be applied.
A structure of a CCD image sensor of VODF method shows in Fig.l(a).
An n-type epiraxial layer(2) is formed on an n-type substrate(13 and a shallow p-type well(3) and a deep p-type well(4) is formed on an n-type epitaxial layer(2) by imlanting ions twice. An n-type photo diode(5) and an n-type BCCD(6) are formed in the upper region of said shallow p-type well(3) and said deep p-type well(4) respectively. And then, a transfer poly gate(7) for connecting said n-type photo diode(5) and said n-type BCCD and a poly gate electrode(7a) for applying a clock signal to said n-type BCCD(6) are formed over the surface of region between them and said n-type BCCD(6).
As shown in Fig.1(a), if light is radiated on an n-type photo diode (5) and a signal charge is generated under an n-type photo diode, a signal charge is shifted to an n-type BCCD(6) by high level signal which is applied to a transfer poly gate(7) and stored under an n-type BCCD(6). AT this time, a signal charge is shifted to a BCCD by conventional clocking of a CCD.
Fig.1(b) shows an electric potential distribution taken along the line a-a' of Fig.l(a).
However, at the same time, a signal charge generated under said n-type photo diode(5) is drifting between a deep p-type well(4) and an ntype BCCD(6) or is discharged to an n-type substrate(1) and this charge causes the smear phenomenon.
Furthermore, when a shutter voltage which is on the order of 30 V through 40 V is applied to an n-type substrate(1), this smear charge is discharged to an n-type substrate(1) by a shutter voltage and the smear phenomenon can be further increased. This is because this shutter voltage is very intense.
In prior art, to prevent the smear phenomenon a p'-type BPL(Blocking
P-type Layer) has been formed in a designated region between said n-type
BCCD(6) and said deep p-type well(4) by implanting p ions with high energy.
The process for fabrication a CCD image sensor using p±type BPL according to priot art will be described with reference to the accompanying Fig.2(a) through Fig.2(f).
First, as shown in Fig.2(a), an n-type epitaxial layer(2) is formed on an n-type substrate(1) and as shown in Fig.2(b) p-type ions are implanted onto an n-type epitaxial layer(2) twice to control an OFD voltage and as shown in Fig.2(c) a shallow p-type well(3) and a deep p-type well(4) of a designated depth are formed by heat treatment which is used for diffusing the implanted p-type ions.
Next, as shown in Fig.2(d), p±type BPL(8) is formed in a designated region of said deep n-type well(4) by implanting p-type ions by means of ion implantation apparatus of high energr(about 6OOKeV). Thereinafter the p±type BPL(8) prevents the smear phenomenon that signal charge stored in BCCD is discharged to a substrate by a shutter voltage of a substrate and that a signal charge generated in photo diode is not transfer to said BCCD but is discharged to a substrate.
As shown, in Fig.2(e), an n-type photo diode(5) is formed in a designated region of the upper region of said shallow p-type well(3) by implanting n-type ions and an n-type BCCD(6) is formed in a deep p-type well(4) which is in the upper region of said p±type BPL(8) by implanting n-type ions.
At this time, conventionally p±type thin film(9) is formed in the surface of an n-type photo diode(5).
Next, as shown in Fig.2(f) a transfer poly gate(7) for connecting said n-type photo diode(5) and said n-type BCCD(6) and a poly gate electrode (7a) for apply a clock signal to said n-type BCCD(6) are formed over the surface of region between them and said n-type BCCD(6). In this process, poly silicon is used for a transfer gate. Metal such as Al instead of poly silicon can be used for it but it is almost out of use with bad transfer chracteristic.
Fig.3(a) shows a reference diagram to explain the operation of a
CCD image sensor fabricated by the above-mentioned process and the operation of a CCD image sensor will be described with reference Fig.3(a).
Now, if light(#)is radiated on an n-type photo diode(5), a signal charge is generated in the light signal charge output region(O) which is disposed between said n-type photo diode(5) and a shallow p-type well (3). When a driving signal of high level is applied to a transfer poly gate(7), this signal charge is stored in the signal charge store region (Q) adjacent to an n-type BCCD(6) through the signal charge transfer channel region(P) which is disposed between an n-type photo diode(5) and an n-type BCCD(6).
Next, a signal charge stored in said signal charge store region (Q) is shifted to a HCCI)(Horizontal Charge Coupled Device) (not shown) by the conventional clocking operation.
At this time, if a signal charge generated in the light signal charge output region(O) is not passed the signal charge transfer channel region(P) but is discharged to the smear signal output region(R) which is disposed between a deep p-type well(4) and a p+type BPL(8), the smear phenomenon is generated on screen of a CCD image sensor.
But, as shown in Fig.3(b) which shows an electric potential distribution taken along the line b-b' of Fig.3(a), it is hard to discharge a signal charge to the smear signal output region(R) with high potential barrier of said p±type BPL(8) and therefore the smear phenomenon is reduced
Actually, a signal charge which is drifting in an n-type BCCD(6) rather than a smear signal which is discharged to an n-type substrate(1) is further discussed.
In said structure of a CCD image sensor of prior art, a shallow ptype well and a deep p-type well is formed in the shape of flat by implanting ions twice to apply anti-blooming bias but the former can be formed in shape of heart.
Now, by forming said p-type well in the general shape of flat and controlling the impurity concentration of the region under a photo diode and a BCCD at implanting ions, a structure and a method for fabrication of a CCD image sensor which is prevented the smear phenomenon and is controlled an OFD voltage have been studing. But they are yet out of use with difficulty of ion implantation process.
A structure and a method for fabrication of a CCD image sensor as shown in Fig.2 have a disadvantage as follows.
First, because ion implantion apparatus for forming p±type BPL is very expensive and the usage of it is restricted, it is not of practical use.
Second, because p-type ions are implanted under high energy of about S00KeV, defect is caused in the substrate at implanting ions. Accordingly because noise may be generated by defect in a CCD image sensor of prior art, the smear phenomenon can be reduced but a high level of process technology to form p±type BPL is demand.
SUMMARY OF THE INVENTION
It is an object to provide of a method for fabrication of a CCD image sensor to shorten and accomplish easily the process.
It is another object to provide an improved structure of a CCD image sensor to control an OFD voltage and to reduce the smear phenomenon.
According to a preferred embodiment of the present invention, there is provided a method for fabrication of a CCD image sensor comprising a step for forming an n-type region to control an OFD voltage and a p-type region to reduce the smear phenomenon at a designated interval on a epitaxial layer by implanting n-type ions and p-type ions of a high impurity concentration and a heat treatment, a step for growing a p-type epitaxial layer of a designated depth -over the whole surface, a step for forming an n-type photo diode and an n-type BCCD at a designated interval by implanting n-type ions in wells which is above said n-type region for controlling an OFD voltage and a p±type region for reducing
the smear phenomenon layer respectively, a step for forming a transfer
poly gate to connect an n-type photo diode and an n-type BCCD and a poly
gate electode for apply a clock signal to said n-type BCCD over the sur
face of region between them and said n-type BCCD.
And, there is provided an improved structure of a CCD image sensor
including an n-type photo diode and an n-type BCCD enclosed by a p-type
epitaxial layer and a transfer poly gate to connect them, an improvement
characterized by an n-type region for controlling an OFD voltage which is
disposed between an n-type substrate beneath an n-type photo diode and
a p-type epitaxial layer and a p±type region for reducing the smear
phenomenon which is deposed between an n-type substrate beneath an n-type
BCCD and a p-type epitaxial layer, said regions having the designated depth and width and being formed at a designated interval in a horizontal
direction.
The above and other related objects and features of the present inve
ntion will be apparent from the reading of following description of the
disclosure found in the accompanying drawings and the novelty thereof pointed out in the claims.
Brief Description of the Drawings
Fig. l(a) is a cross sectional view of a structure of a CCD image sensor in which reduction of the smear phenomenon is not considered.
Fig. l(b) is an electric potential distribution taken along the line a-a' Fig. 1(a).
Fig. 2(a) through Fig.2(f) are cross sectional view to explain a method for fabrication of a CCD image sensor of an prior art in which reduction of the smear phenomenon is considered.
Fig. 3(a) is a reference diagram to explain the operation of CCD image sensor according to a prior art.
Fig. 3(b) is a electric potential distribution taken along the line b-b' of Fig. 3(a).
Fig. 4(a) through 4(e) are cross sectional view to explain a method for fabrication of a CCD image sensor according to the present invention in which reduction of the smear phenomenon is considered.
Fig. 5(a) is a reference diagram to explain the operation of a CCD image sensor according to the present invention.
Fig. 5(b) is an electric potential distribution taken along the line c-c' of Fig. 3(F).
Detailed Description of the Invention
A method for fabrication of a CCD image sensor according to the present invention will be described in more detail with reference to
Fig.4(a) through Fig. 4(e).
First of all, as shown in Fig. 4(a), n-type ions are implanted in a designated region of an n-type substrate(11) as starting material and as shown in Fig.4(b) p-type ions are implanted in the region which is depart from with said n-type ion implanted region at a designated interval.
As shown in Fig.4(c), by diffusing the implanted n-type and p-type ions by mean of heat treatment, an n-type region(12) for controlling an
OFD voltage and a p'-type region(13) for reducing the smear phenomenon are formed at a designated interval and then a p-type epitaxial layer(14) is formed over the whole surface.
At this time, a designated interval between said n-type region(12) for controlling an OFD voltage and said p±type region(13)for reducing the smear phenomenon is a funtion as path to discharge a smear signal to an n-type substrate(ll) and said epitaxial layer(14) is the same function of a p-type well(3) and (4) in a CCD image of prior art as shown in Fig. 2.
Next, as shown in Fig. 4(d), an n-type photo diode(15) and an ntype BCCD(16) are formed on the surface of a p-type epitaxial layer(14) above said n-type region(12) for controlling an OFD voltage and said p±type region(13) for reducing the smear phenomenon, respectively.
At this time, p±type thin film(18) is ordinary formed in the surface of an n-type photo diode(15).
Then, as shown in Fig.4(e), a transfer poly gate(17) for connecting said n-type photo diode(15) and said n-type BCCD(16) and poly gate electrode(17a) for applying a clock signal to said n-type BCCD(16) are formed over the surface of region between them and said n-type BCCD(16). In this process, poly silicon is used for said transfer poly gate(17), but metal such as Al may be used for.
Fig 5(a) is a reference diagram to explain the operation of a CCD image sensor fabricated by aforesaid process and the operation of a CCD image sensor will be described with reference to Fig.5(a).
If light(#)is radiated on the surface of an n-type photo diode(15), a signal charge is generated in the light signal charge output region (0) under said n-type photo diode(153. When high level signal is applied to a transfer poly gate(1?), thus turned on, a signal charge is shifted to and stored in the signal charge store region(Q) under said n-type BCCD(16) through the signal charge transfer channel region(P) of a p-type epitaxial layer(14), Then, signal stored in the signal charge store region(Q) under said n-type BCCD(16) is shifted to a HCCD (not shown)by the operation of CCD clocking.
At this time, a portion of a signal charge generated in the light signal charge output region(O) is not shifted to the signal charge store region(Q) through the signal charge transfer channel region(P) and this signal charge cause a smear phenomenon.
Here, a smear charge being drifting under said n-type BCCD(16) rather than a smear charge discharged to an n-type substrate(11) is further affected to quality of the image on screen.
This is because when a plurality of a CCD image sensor may be applied to a solid state image pick-up device, a smear charge generated in a photo diode is drifting and this charge should be affected to a signal charge generated in other photo diode.
In the structure of a CCD-type image sensor according to the present invention, with the form of a p±type region(13) for reducing the smear phenomenon under said n-type BCCD(16) as shown in Fig. 5(a), higher potential barrier is formed in this region.
Accordingly, a smear charge is not remained in this region and is discharged to an n-type substrate(11) through the smear charge output region(R) where a potential barrier is not formed.
Fig. 5(b) shows an electric potential distribution taken along the line c-c' of Fig.S(a).
As shown in Fig.S(b), because the higher potential barrier and the wider nutral region are formed in said p±type region(13) for reducing the smear phenomenon, a smear charge is not remained in this region and is discharged to an n-type substrate(11) through the smear signal output region(R). The smear signal output region(R) is formed in the designated region between said n-type region(12) for controlling an OFD voltage and said p±type region(13) for reducing the smear phenomenon which has a lower potential barrier.
As the above-mentioned, the effect of the present invention is follows.
First, because an expensive ion implantation apparatus and high energy at implanting ions are unnecessary as compared with a prior art, it is economical and prevented defect of a substrate.
Second, because high-precision in process in unnecessary as compared with a prior art, a process is rapidly proceeded.
Third, the smear phenomenon can be further prevented.
While the invention has been particularly shown and described herein with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various modifications and changes may be made to the instant invention utilizing the principles of the invention as described herein without departing from the spirit and scope thereof as encompassed in the accompanying claims. Therefore, it is intended in the accompanying claims to cover all such equivalent variations as come within the scope of the invention as described.
Claims (5)
1. A CCD image sensor including an n-type photo diode and an n-type BCCD supported by a p-type epitaxial layer, a transfer poly gate for controlling charge flow between the photo diode and the BCCD, and a poly gate electrode for applying a clock signal to said n-type BCCD, wherein there is provided an n-type substrate, an n-type region for controlling an OFD voltage and disposed between said n-type substrate and said p-type epitaxial layer beneath said n-type photo diode, a p±type region for reducing the smear phenomenon and disposed between said n-type substrate and said p-type epitaxial layer beneath said n-type BCCD, said regions being dimensioned in depth and width and being spaced apart horizontally to provide a path for smear charge to said n-type substrate.
2. A method of fabricating a CCD image sensor comprising the steps of:
implanting n-type ions in a first region of an n-type substrate;
implanting p-type ions in a second region spaced apart horizontally from said first region;
forming an n-type region for controlling an OFD voltage and a p±type region for reducing the smear phenomenon by diffusing the implanted ions in the respective first and second regions by means of a heat treatment;
growing a p-type epitaxial layer over the upper surface of said regions and said substrate;
implanting n-type ions to form an n-type photo diode and an n-type BCCD on said p-type epitaxial layer respectively above said n-type region and said p±type region; and
forming a transfer poly gate associated with said n-type photo diode and said n-type BCCD, and a poly gate electrode to apply a clock signal to said n-type BCCD.
3. A method according to claim 2 and substantially as described herein with reference to Figs. 4a to 4e of the accompanying drawings.
4. A CCD image sensor when made by a method according to claim 2 or claim 3.
5. A CCD image sensor substantially as described herein with reference to Figs. 4a to 5b of the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900006730A KR920007355B1 (en) | 1990-05-11 | 1990-05-11 | Method of producing a ccd image sensor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9109966D0 GB9109966D0 (en) | 1991-07-03 |
| GB2245423A true GB2245423A (en) | 1992-01-02 |
| GB2245423B GB2245423B (en) | 1994-02-02 |
Family
ID=19298928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9109966A Expired - Lifetime GB2245423B (en) | 1990-05-11 | 1991-05-10 | Structure and method for fabrication of a CCD image sensor |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2641809B2 (en) |
| KR (1) | KR920007355B1 (en) |
| DE (1) | DE4115060C2 (en) |
| FR (1) | FR2662852B1 (en) |
| GB (1) | GB2245423B (en) |
| NL (1) | NL9100825A (en) |
| RU (1) | RU2025830C1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0573292A1 (en) * | 1992-06-03 | 1993-12-08 | Sharp Kabushiki Kaisha | Solid state imaging device and method of manufacture therefor |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960002645B1 (en) * | 1992-04-03 | 1996-02-24 | 엘지반도체주식회사 | Charge transferring device and solid state image picking-up device |
| DE4329838B4 (en) * | 1993-09-03 | 2005-09-22 | Hynix Semiconductor Inc., Ichon | Solid-state image sensor |
| JP2003248097A (en) | 2002-02-25 | 2003-09-05 | Konica Corp | Radiation image conversion panel and its production method |
| JP5375142B2 (en) * | 2009-02-05 | 2013-12-25 | ソニー株式会社 | Solid-state imaging device, driving method of solid-state imaging device, and electronic apparatus |
| JP5375141B2 (en) * | 2009-02-05 | 2013-12-25 | ソニー株式会社 | Solid-state imaging device, method for manufacturing solid-state imaging device, driving method for solid-state imaging device, and electronic apparatus |
| JP4752926B2 (en) * | 2009-02-05 | 2011-08-17 | ソニー株式会社 | Solid-state imaging device, manufacturing method of solid-state imaging device, driving method of solid-state imaging device, electronic apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2103876A (en) * | 1981-07-27 | 1983-02-23 | Sony Corp | Solid state image sensors |
| EP0240238A2 (en) * | 1986-03-25 | 1987-10-07 | Sony Corporation | Solid state imager device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0048480B1 (en) * | 1980-09-19 | 1985-01-16 | Nec Corporation | Semiconductor photoelectric converter |
| JPH0614544B2 (en) * | 1983-10-03 | 1994-02-23 | 松下電子工業株式会社 | Method of manufacturing solid-state imaging device |
| JPS60169165A (en) * | 1984-02-10 | 1985-09-02 | Hitachi Ltd | Solid image sensor element |
| JP2610010B2 (en) * | 1984-02-29 | 1997-05-14 | ソニー株式会社 | Vertical overflow image sensor |
| JPS6156583A (en) * | 1984-08-27 | 1986-03-22 | Sharp Corp | Solid-state image pickup device |
| JP2573582B2 (en) * | 1986-09-05 | 1997-01-22 | 日本電気株式会社 | Method for manufacturing solid-state image sensor |
| JPH07120774B2 (en) * | 1986-12-05 | 1995-12-20 | 松下電子工業株式会社 | Solid-state imaging device |
| JPH01207964A (en) * | 1988-02-16 | 1989-08-21 | Oki Electric Ind Co Ltd | Solid-state image sensor |
-
1990
- 1990-05-11 KR KR1019900006730A patent/KR920007355B1/en not_active IP Right Cessation
-
1991
- 1991-05-08 DE DE4115060A patent/DE4115060C2/en not_active Expired - Lifetime
- 1991-05-08 RU SU4895484/25A patent/RU2025830C1/en active
- 1991-05-10 GB GB9109966A patent/GB2245423B/en not_active Expired - Lifetime
- 1991-05-10 FR FR9105703A patent/FR2662852B1/en not_active Expired - Lifetime
- 1991-05-13 NL NL9100825A patent/NL9100825A/en unknown
- 1991-05-13 JP JP3107229A patent/JP2641809B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2103876A (en) * | 1981-07-27 | 1983-02-23 | Sony Corp | Solid state image sensors |
| EP0240238A2 (en) * | 1986-03-25 | 1987-10-07 | Sony Corporation | Solid state imager device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0573292A1 (en) * | 1992-06-03 | 1993-12-08 | Sharp Kabushiki Kaisha | Solid state imaging device and method of manufacture therefor |
| US5404039A (en) * | 1992-06-03 | 1995-04-04 | Sharp Kabushiki Kaisha | Solid state imaging device and method of manufacture therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE4115060A1 (en) | 1991-12-19 |
| KR910020919A (en) | 1991-12-20 |
| GB9109966D0 (en) | 1991-07-03 |
| NL9100825A (en) | 1991-12-02 |
| GB2245423B (en) | 1994-02-02 |
| FR2662852A1 (en) | 1991-12-06 |
| KR920007355B1 (en) | 1992-08-31 |
| JP2641809B2 (en) | 1997-08-20 |
| JPH0774334A (en) | 1995-03-17 |
| DE4115060C2 (en) | 1997-07-31 |
| RU2025830C1 (en) | 1994-12-30 |
| FR2662852B1 (en) | 1996-12-27 |
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