JP2556397B2 - 多結晶ケイ素の製造における始動フィラメント用黒鉛チャック及びその保護方法 - Google Patents

多結晶ケイ素の製造における始動フィラメント用黒鉛チャック及びその保護方法

Info

Publication number
JP2556397B2
JP2556397B2 JP2418179A JP41817990A JP2556397B2 JP 2556397 B2 JP2556397 B2 JP 2556397B2 JP 2418179 A JP2418179 A JP 2418179A JP 41817990 A JP41817990 A JP 41817990A JP 2556397 B2 JP2556397 B2 JP 2556397B2
Authority
JP
Japan
Prior art keywords
graphite
silicon
chuck
filament
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2418179A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06157195A (ja
Inventor
マイケル、ヘンリー、ギルバート
ジョン、ブライス、ヘッジ
ポール、ジュード、ウォルシュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Praxair Surface Technologies Inc
Original Assignee
Union Carbide Coatings Service Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Coatings Service Corp filed Critical Union Carbide Coatings Service Corp
Publication of JPH06157195A publication Critical patent/JPH06157195A/ja
Application granted granted Critical
Publication of JP2556397B2 publication Critical patent/JP2556397B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5001—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with carbon or carbonisable materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2418179A 1990-06-27 1990-12-25 多結晶ケイ素の製造における始動フィラメント用黒鉛チャック及びその保護方法 Expired - Lifetime JP2556397B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54461190A 1990-06-27 1990-06-27
US07/544611 1990-06-27

Publications (2)

Publication Number Publication Date
JPH06157195A JPH06157195A (ja) 1994-06-03
JP2556397B2 true JP2556397B2 (ja) 1996-11-20

Family

ID=24172884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2418179A Expired - Lifetime JP2556397B2 (ja) 1990-06-27 1990-12-25 多結晶ケイ素の製造における始動フィラメント用黒鉛チャック及びその保護方法

Country Status (5)

Country Link
US (1) US5277934A (enExample)
JP (1) JP2556397B2 (enExample)
KR (1) KR960003734B1 (enExample)
DE (1) DE4041902A1 (enExample)
IT (1) IT1246735B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3774920B2 (ja) * 1995-12-27 2006-05-17 信越半導体株式会社 単結晶引上装置のヒータ機構
US6238483B1 (en) 1999-08-31 2001-05-29 Memc Electronic Materials, Inc. Apparatus for supporting a semiconductor ingot during growth
KR20010087680A (ko) * 2000-03-08 2001-09-21 홍순달 장식용 포장지 및 이의 제조방법
KR100479711B1 (ko) * 2001-06-22 2005-03-30 코리아케미칼 주식회사 부분접착에 의한 투명효과 금은박 열전사필름 및 그제조방법
US20070181065A1 (en) * 2006-02-09 2007-08-09 General Electric Company Etch resistant heater and assembly thereof
US9683286B2 (en) 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
KR100768147B1 (ko) * 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
KR200452119Y1 (ko) * 2009-01-06 2011-02-08 양종열 화훼포장용 포장지
DE202009007875U1 (de) 2009-06-04 2009-08-20 Wüst, Manfred, Dr. Vorwärmvorrichtung zum Vorwärmen von flüssigem und/oder gasförmigen Treibstoff für eine Brennkraftmaschine
JP5431074B2 (ja) * 2009-09-02 2014-03-05 東洋炭素株式会社 シード保持部材及びそのシード保持部材を用いた多結晶シリコン製造方法
US10494714B2 (en) 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
KR101435875B1 (ko) * 2012-03-12 2014-09-01 (주)아폴로테크 폴리실리콘 제조용 흑연척 재활용 방법
WO2014011647A1 (en) * 2012-07-10 2014-01-16 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and a socket for use therein
EP3578514B1 (en) 2017-03-08 2025-12-31 Tokuyama Corporation PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON-TREATED ARTICLE
SG11202100213UA (en) * 2018-07-23 2021-02-25 Tokuyama Corp Core wire holder, apparatus for preparing silicon, and method for preparing silicon
CN111945129A (zh) * 2020-07-22 2020-11-17 山东国晶新材料有限公司 一种用于真空炉石墨部件的防护方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1223804B (de) * 1961-01-26 1966-09-01 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium
JPS5121937A (ja) * 1974-08-15 1976-02-21 Kinki Bendeingu Saabisu Kk Booruchidashiki
US4621017A (en) * 1982-04-15 1986-11-04 Kennecott Corporation Corrosion and wear resistant graphite material and method of manufacture
JPS6176663A (ja) * 1984-09-20 1986-04-19 Hitachi Chem Co Ltd アルミニウム蒸着用黒鉛るつぼ
JPH0825838B2 (ja) * 1986-09-19 1996-03-13 東洋炭素株式会社 エピタキシヤル成長用黒鉛材料
JPS649900A (en) * 1987-06-30 1989-01-13 Ibiden Co Ltd Jig for heat-treating semiconductor wafer
JPH01176290A (ja) * 1987-12-28 1989-07-12 Ibiden Co Ltd 液相エピタキシャル成長用黒鉛治具

Also Published As

Publication number Publication date
DE4041902A1 (de) 1992-01-09
US5277934A (en) 1994-01-11
KR960003734B1 (ko) 1996-03-21
IT9022537A1 (it) 1992-06-24
KR920000618A (ko) 1992-01-29
IT9022537A0 (it) 1990-12-24
JPH06157195A (ja) 1994-06-03
DE4041902C2 (enExample) 1993-04-08
IT1246735B (it) 1994-11-26

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