GB928683A - A method of producing highly purified silicon carbide - Google Patents

A method of producing highly purified silicon carbide

Info

Publication number
GB928683A
GB928683A GB35967/59A GB3596759A GB928683A GB 928683 A GB928683 A GB 928683A GB 35967/59 A GB35967/59 A GB 35967/59A GB 3596759 A GB3596759 A GB 3596759A GB 928683 A GB928683 A GB 928683A
Authority
GB
United Kingdom
Prior art keywords
sic
carrier
crucible
silicon
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB35967/59A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES60345A external-priority patent/DE1195729B/en
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB928683A publication Critical patent/GB928683A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5057—Carbides
    • C04B41/5059—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd

Abstract

Silicon carbide is prepared by thermal decomposition and/or reaction of a purified gas mixture containing both a gaseous silicon compound and a gaseous carbon compound flowing past a heated carrier maintained at above 1150 DEG C. The reaction gas, which preferably contains Si and C in an atomic proportion of 1, may contain a halosilane, e.g. SiClH3 or SiHCl3 together with H2 and/or inert gas, e.g. A, and is passed from a nozzle over a rod-shaped carrier, which may have a coefficient of expansion approximately the same as SiC, of, e.g. graphite, silicon, silicon dioxide, aluminium oxide, tantalum, tungsten, molybdenum, or rhenium, heated electrically, inductively, radiantly, or conductively. The carrier may contain a conductivity-type determining impurity, e.g. boron, or a gaseous conductivity-type determining impurity may be present in the reaction gas. Two layers of SiC may be deposited which are oppositely doped. A protective layer of Si may be deposited on the SiC by lowering the carrier temperature to 1000 DEG C. Chemical or metallurgical apparatus may be formed of the SiC, or gas-tight protective coatings of SiC for electrical, chemical, metallurgical, and optical apparatus, e.g. optical lens, may be produced by the process, with the bodies to be coated acting as carriers. The carrier and coating may serve as electrical connections, and portions of the carrier and any protective Si layer may be removed by etching for use as rectifiers. An SiC crucible may be prepared by depositing SiC on a crucible-shaped carrier and the carrier removed mechanically or by etching, or a crucible may be coated with SiC. These crucibles may be used for drawing silicon or other semi-conductor crystals from a melt.ALSO:A crucible is made of, or coated with, silicon carbide prepared by thermal decomposition and/or reaction of a purified gas mixture containing both a gaseous silicon compound and a gaseous carbon compound flowing past a heated carrier maintained at above 1150 DEG C. (see Group III). The SiC may be deposited on a crucible-shaped carrier to form a coated crucible, or the carrier may be removed mechanically, or by etching to form a SiC crucible. These crucibles may be used for drawing silicon or other semi-conductor crystals from a melt.
GB35967/59A 1958-10-23 1959-10-23 A method of producing highly purified silicon carbide Expired GB928683A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES60345A DE1195729B (en) 1958-10-23 1958-10-23 Process for producing bodies from high-purity silicon carbide
DES0063828 1959-07-09

Publications (1)

Publication Number Publication Date
GB928683A true GB928683A (en) 1963-06-12

Family

ID=25995588

Family Applications (1)

Application Number Title Priority Date Filing Date
GB35967/59A Expired GB928683A (en) 1958-10-23 1959-10-23 A method of producing highly purified silicon carbide

Country Status (2)

Country Link
CH (1) CH441248A (en)
GB (1) GB928683A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946491A (en) * 1982-09-10 1984-03-15 Toshiba Ceramics Co Ltd Heat exchanger of silicon carbide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946491A (en) * 1982-09-10 1984-03-15 Toshiba Ceramics Co Ltd Heat exchanger of silicon carbide
JPH026998B2 (en) * 1982-09-10 1990-02-14 Toshiba Ceramics Co

Also Published As

Publication number Publication date
CH441248A (en) 1967-08-15

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