JP2547633B2 - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2547633B2
JP2547633B2 JP1116527A JP11652789A JP2547633B2 JP 2547633 B2 JP2547633 B2 JP 2547633B2 JP 1116527 A JP1116527 A JP 1116527A JP 11652789 A JP11652789 A JP 11652789A JP 2547633 B2 JP2547633 B2 JP 2547633B2
Authority
JP
Japan
Prior art keywords
spare
row
signal
selection signal
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1116527A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02294999A (ja
Inventor
司 大石
吉雄 松田
和民 有本
正樹 築出
一康 藤島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1116527A priority Critical patent/JP2547633B2/ja
Priority to KR1019900006247A priority patent/KR940000902B1/ko
Priority to DE4014723A priority patent/DE4014723A1/de
Publication of JPH02294999A publication Critical patent/JPH02294999A/ja
Priority to US07/958,466 priority patent/US5289417A/en
Priority to US08/180,166 priority patent/US5504713A/en
Application granted granted Critical
Publication of JP2547633B2 publication Critical patent/JP2547633B2/ja
Priority to US08/882,758 priority patent/US5982678A/en
Priority to US09/334,917 priority patent/US6075732A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/806—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP1116527A 1989-05-09 1989-05-09 半導体記憶装置 Expired - Lifetime JP2547633B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP1116527A JP2547633B2 (ja) 1989-05-09 1989-05-09 半導体記憶装置
KR1019900006247A KR940000902B1 (ko) 1989-05-09 1990-05-03 반도체 기억장치
DE4014723A DE4014723A1 (de) 1989-05-09 1990-05-08 Halbleiterspeichereinrichtung mit redundanzschaltkreis
US07/958,466 US5289417A (en) 1989-05-09 1992-10-08 Semiconductor memory device with redundancy circuit
US08/180,166 US5504713A (en) 1989-05-09 1994-01-11 Semiconductor memory device with redundancy circuit
US08/882,758 US5982678A (en) 1989-05-09 1997-06-26 Semiconductor memory device with redundancy circuit
US09/334,917 US6075732A (en) 1989-05-09 1999-06-17 Semiconductor memory device with redundancy circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1116527A JP2547633B2 (ja) 1989-05-09 1989-05-09 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH02294999A JPH02294999A (ja) 1990-12-05
JP2547633B2 true JP2547633B2 (ja) 1996-10-23

Family

ID=14689337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1116527A Expired - Lifetime JP2547633B2 (ja) 1989-05-09 1989-05-09 半導体記憶装置

Country Status (4)

Country Link
US (2) US5982678A (enExample)
JP (1) JP2547633B2 (enExample)
KR (1) KR940000902B1 (enExample)
DE (1) DE4014723A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452251A (en) 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
KR950004623B1 (ko) * 1992-12-07 1995-05-03 삼성전자주식회사 리던던시 효율이 향상되는 반도체 메모리 장치
JP3351595B2 (ja) * 1993-12-22 2002-11-25 株式会社日立製作所 半導体メモリ装置
US6072735A (en) * 1998-06-22 2000-06-06 Lucent Technologies, Inc. Built-in redundancy architecture for computer memories
US6198675B1 (en) 1998-12-23 2001-03-06 Cray Inc. RAM configurable redundancy
JP2001143494A (ja) * 1999-03-19 2001-05-25 Toshiba Corp 半導体記憶装置
JP2000285694A (ja) * 1999-03-30 2000-10-13 Mitsubishi Electric Corp 半導体記憶装置および半導体記憶装置を搭載する半導体集積回路装置
US7656727B2 (en) * 2007-04-25 2010-02-02 Hewlett-Packard Development Company, L.P. Semiconductor memory device and system providing spare memory locations

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928560Y2 (ja) * 1979-11-13 1984-08-17 富士通株式会社 冗長ビットを有する記憶装置
DE3028813C2 (de) * 1980-07-30 1983-09-08 Christensen, Inc., 84115 Salt Lake City, Utah Verfahren und Vorrichtung zur Fernübertragung von Informationen
US4389715A (en) * 1980-10-06 1983-06-21 Inmos Corporation Redundancy scheme for a dynamic RAM
US4459685A (en) * 1982-03-03 1984-07-10 Inmos Corporation Redundancy system for high speed, wide-word semiconductor memories
JPS59151398A (ja) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp 半導体記憶装置
US4639897A (en) * 1983-08-31 1987-01-27 Rca Corporation Priority encoded spare element decoder
JPH0666120B2 (ja) * 1983-11-09 1994-08-24 株式会社東芝 半導体記憶装置の冗長部
JPS6237479A (ja) * 1985-08-12 1987-02-18 日産自動車株式会社 無線式施解錠制御装置
JPS62222500A (ja) * 1986-03-20 1987-09-30 Fujitsu Ltd 半導体記憶装置
JPS62293598A (ja) * 1986-06-12 1987-12-21 Toshiba Corp 半導体記憶装置
JPH0810553B2 (ja) * 1986-06-13 1996-01-31 松下電器産業株式会社 記憶回路
JPS6355797A (ja) * 1986-08-27 1988-03-10 Fujitsu Ltd メモリ
US4837747A (en) * 1986-11-29 1989-06-06 Mitsubishi Denki Kabushiki Kaisha Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block
JPH0748315B2 (ja) * 1986-12-22 1995-05-24 三菱電機株式会社 半導体記憶装置
JP2629697B2 (ja) * 1987-03-27 1997-07-09 日本電気株式会社 半導体記憶装置
JP2590897B2 (ja) * 1987-07-20 1997-03-12 日本電気株式会社 半導体メモリ
US4807191A (en) * 1988-01-04 1989-02-21 Motorola, Inc. Redundancy for a block-architecture memory
US4885720A (en) * 1988-04-01 1989-12-05 International Business Machines Corporation Memory device and method implementing wordline redundancy without an access time penalty
JP2617779B2 (ja) * 1988-08-31 1997-06-04 三菱電機株式会社 半導体メモリ装置
JP2582439B2 (ja) * 1989-07-11 1997-02-19 富士通株式会社 書き込み可能な半導体記憶装置
KR950000504B1 (ko) * 1992-01-31 1995-01-24 삼성전자 주식회사 복수개의 로우 어드레스 스트로브 신호를 가지는 반도체 메모리 장치

Also Published As

Publication number Publication date
DE4014723A1 (de) 1990-11-15
US5982678A (en) 1999-11-09
KR940000902B1 (ko) 1994-02-04
JPH02294999A (ja) 1990-12-05
KR900019047A (ko) 1990-12-22
US6075732A (en) 2000-06-13
DE4014723C2 (enExample) 1991-10-31

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