KR940000902B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

Info

Publication number
KR940000902B1
KR940000902B1 KR1019900006247A KR900006247A KR940000902B1 KR 940000902 B1 KR940000902 B1 KR 940000902B1 KR 1019900006247 A KR1019900006247 A KR 1019900006247A KR 900006247 A KR900006247 A KR 900006247A KR 940000902 B1 KR940000902 B1 KR 940000902B1
Authority
KR
South Korea
Prior art keywords
memory cell
row
selection
cell arrays
signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019900006247A
Other languages
English (en)
Korean (ko)
Other versions
KR900019047A (ko
Inventor
쓰가사 오오이시
요시오 마쓰다
가즈다미 아리모도
마사끼 쓰구데
가즈야쓰 후지시마
Original Assignee
미쓰비시 뎅끼 가부시끼가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅끼 가부시끼가이샤, 시기 모리야 filed Critical 미쓰비시 뎅끼 가부시끼가이샤
Publication of KR900019047A publication Critical patent/KR900019047A/ko
Application granted granted Critical
Publication of KR940000902B1 publication Critical patent/KR940000902B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/806—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
KR1019900006247A 1989-05-09 1990-05-03 반도체 기억장치 Expired - Lifetime KR940000902B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1-116527 1989-05-09
JP1116527A JP2547633B2 (ja) 1989-05-09 1989-05-09 半導体記憶装置
JP89-116527 1989-05-09

Publications (2)

Publication Number Publication Date
KR900019047A KR900019047A (ko) 1990-12-22
KR940000902B1 true KR940000902B1 (ko) 1994-02-04

Family

ID=14689337

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900006247A Expired - Lifetime KR940000902B1 (ko) 1989-05-09 1990-05-03 반도체 기억장치

Country Status (4)

Country Link
US (2) US5982678A (enExample)
JP (1) JP2547633B2 (enExample)
KR (1) KR940000902B1 (enExample)
DE (1) DE4014723A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452251A (en) 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
KR950004623B1 (ko) * 1992-12-07 1995-05-03 삼성전자주식회사 리던던시 효율이 향상되는 반도체 메모리 장치
JP3351595B2 (ja) * 1993-12-22 2002-11-25 株式会社日立製作所 半導体メモリ装置
US6072735A (en) * 1998-06-22 2000-06-06 Lucent Technologies, Inc. Built-in redundancy architecture for computer memories
US6198675B1 (en) 1998-12-23 2001-03-06 Cray Inc. RAM configurable redundancy
JP2001143494A (ja) * 1999-03-19 2001-05-25 Toshiba Corp 半導体記憶装置
JP2000285694A (ja) * 1999-03-30 2000-10-13 Mitsubishi Electric Corp 半導体記憶装置および半導体記憶装置を搭載する半導体集積回路装置
US7656727B2 (en) * 2007-04-25 2010-02-02 Hewlett-Packard Development Company, L.P. Semiconductor memory device and system providing spare memory locations

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928560Y2 (ja) * 1979-11-13 1984-08-17 富士通株式会社 冗長ビットを有する記憶装置
DE3028813C2 (de) * 1980-07-30 1983-09-08 Christensen, Inc., 84115 Salt Lake City, Utah Verfahren und Vorrichtung zur Fernübertragung von Informationen
US4389715A (en) * 1980-10-06 1983-06-21 Inmos Corporation Redundancy scheme for a dynamic RAM
US4459685A (en) * 1982-03-03 1984-07-10 Inmos Corporation Redundancy system for high speed, wide-word semiconductor memories
JPS59151398A (ja) * 1983-02-17 1984-08-29 Mitsubishi Electric Corp 半導体記憶装置
US4639897A (en) * 1983-08-31 1987-01-27 Rca Corporation Priority encoded spare element decoder
JPH0666120B2 (ja) * 1983-11-09 1994-08-24 株式会社東芝 半導体記憶装置の冗長部
JPS6237479A (ja) * 1985-08-12 1987-02-18 日産自動車株式会社 無線式施解錠制御装置
JPS62222500A (ja) * 1986-03-20 1987-09-30 Fujitsu Ltd 半導体記憶装置
JPS62293598A (ja) * 1986-06-12 1987-12-21 Toshiba Corp 半導体記憶装置
JPH0810553B2 (ja) * 1986-06-13 1996-01-31 松下電器産業株式会社 記憶回路
JPS6355797A (ja) * 1986-08-27 1988-03-10 Fujitsu Ltd メモリ
US4837747A (en) * 1986-11-29 1989-06-06 Mitsubishi Denki Kabushiki Kaisha Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block
JPH0748315B2 (ja) * 1986-12-22 1995-05-24 三菱電機株式会社 半導体記憶装置
JP2629697B2 (ja) * 1987-03-27 1997-07-09 日本電気株式会社 半導体記憶装置
JP2590897B2 (ja) * 1987-07-20 1997-03-12 日本電気株式会社 半導体メモリ
US4807191A (en) * 1988-01-04 1989-02-21 Motorola, Inc. Redundancy for a block-architecture memory
US4885720A (en) * 1988-04-01 1989-12-05 International Business Machines Corporation Memory device and method implementing wordline redundancy without an access time penalty
JP2617779B2 (ja) * 1988-08-31 1997-06-04 三菱電機株式会社 半導体メモリ装置
JP2582439B2 (ja) * 1989-07-11 1997-02-19 富士通株式会社 書き込み可能な半導体記憶装置
KR950000504B1 (ko) * 1992-01-31 1995-01-24 삼성전자 주식회사 복수개의 로우 어드레스 스트로브 신호를 가지는 반도체 메모리 장치

Also Published As

Publication number Publication date
DE4014723A1 (de) 1990-11-15
US5982678A (en) 1999-11-09
JPH02294999A (ja) 1990-12-05
JP2547633B2 (ja) 1996-10-23
KR900019047A (ko) 1990-12-22
US6075732A (en) 2000-06-13
DE4014723C2 (enExample) 1991-10-31

Similar Documents

Publication Publication Date Title
US5289417A (en) Semiconductor memory device with redundancy circuit
JP3386547B2 (ja) リダンダンシ回路装置
US5576633A (en) Block specific spare circuit
JP2853406B2 (ja) 半導体記憶装置
US5243570A (en) Semiconductor memory device having redundant memory cell columns concurrently accessible together with regular memory cell arrays
US4656610A (en) Semiconductor memory device having redundancy means
US6104648A (en) Semiconductor memory device having a large band width and allowing efficient execution of redundant repair
US4914632A (en) Semiconductor devices having redundancy circuitry and operating method therefor
US5299164A (en) Semiconductor memory device having redundant circuit
US5841961A (en) Semiconductor memory device including a tag memory
US6041006A (en) Semiconductor memory device
KR940000902B1 (ko) 반도체 기억장치
KR100268322B1 (ko) 반도체 기억 장치
KR100230393B1 (ko) 반도체 메모리장치
KR100374957B1 (ko) 시프트 리던던시에 이용되는 디코드 회로의 규모를 억제한반도체 기억 장치
US4965770A (en) Semiconductor memory capable of simultaneously reading plural adjacent memory cells
JP3100617B2 (ja) 半導体装置
CN105590655B (zh) 修复电路、半导体存储器件及其操作方法
KR100301039B1 (ko) 칼럼선택선신호를제어하여데이터를마스킹하는반도체메모리장치및이의칼럼디코더
JP2999477B2 (ja) 半導体記憶装置
US7782706B2 (en) Semiconductor memory device having a word line activation circuit and/or a bit line activation circuit and a redundant word line activation circuit and/or a redundant bit line acitvation circuit
KR0170276B1 (ko) 반도체 메모리장치의 로우 결함복구장치
KR20010039792A (ko) 반도체 장치
KR100240614B1 (ko) 반도체 메모리의 워드라인 결함구제 회로
KR100406585B1 (ko) 셀대셀리페어장치

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19900503

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19900503

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19930427

Patent event code: PE09021S01D

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19940113

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19940428

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19940504

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19940504

End annual number: 3

Start annual number: 1

PR1001 Payment of annual fee

Payment date: 19970114

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 19980130

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 19990128

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20000118

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20010126

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20020130

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20030123

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20040120

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20050121

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20060126

Start annual number: 13

End annual number: 13

PR1001 Payment of annual fee

Payment date: 20070125

Start annual number: 14

End annual number: 14

PR1001 Payment of annual fee

Payment date: 20080122

Start annual number: 15

End annual number: 15

PR1001 Payment of annual fee

Payment date: 20090123

Start annual number: 16

End annual number: 16

FPAY Annual fee payment

Payment date: 20100129

Year of fee payment: 17

PR1001 Payment of annual fee

Payment date: 20100129

Start annual number: 17

End annual number: 17

EXPY Expiration of term
PC1801 Expiration of term