JP2025501651A5 - - Google Patents

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Publication number
JP2025501651A5
JP2025501651A5 JP2024540589A JP2024540589A JP2025501651A5 JP 2025501651 A5 JP2025501651 A5 JP 2025501651A5 JP 2024540589 A JP2024540589 A JP 2024540589A JP 2024540589 A JP2024540589 A JP 2024540589A JP 2025501651 A5 JP2025501651 A5 JP 2025501651A5
Authority
JP
Japan
Prior art keywords
substrate
donor
manufacturing
piezoelectric
handling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024540589A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025501651A (ja
Filing date
Publication date
Priority claimed from FR2200381A external-priority patent/FR3131980B1/fr
Application filed filed Critical
Publication of JP2025501651A publication Critical patent/JP2025501651A/ja
Publication of JP2025501651A5 publication Critical patent/JP2025501651A5/ja
Pending legal-status Critical Current

Links

JP2024540589A 2022-01-17 2023-01-11 圧電層の移転のためのドナー基板の製造のためのプロセス及び支持基板への圧電層の移転のためのプロセス Pending JP2025501651A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR2200381 2022-01-17
FR2200381A FR3131980B1 (fr) 2022-01-17 2022-01-17 Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support
PCT/EP2023/050567 WO2023135179A1 (fr) 2022-01-17 2023-01-11 Procédé de fabrication d'un substrat donneur pour le transfert d'une couche piézoélectrique et procédé de transfert d'une couche piézoélectrique sur un substrat support

Publications (2)

Publication Number Publication Date
JP2025501651A JP2025501651A (ja) 2025-01-22
JP2025501651A5 true JP2025501651A5 (https=) 2026-01-05

Family

ID=81581197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024540589A Pending JP2025501651A (ja) 2022-01-17 2023-01-11 圧電層の移転のためのドナー基板の製造のためのプロセス及び支持基板への圧電層の移転のためのプロセス

Country Status (8)

Country Link
US (1) US20250176431A1 (https=)
EP (1) EP4466966B1 (https=)
JP (1) JP2025501651A (https=)
KR (1) KR20240135826A (https=)
CN (1) CN118525618A (https=)
FR (1) FR3131980B1 (https=)
TW (1) TW202418979A (https=)
WO (1) WO2023135179A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6372352B2 (ja) * 2013-07-16 2018-08-15 東洋紡株式会社 フレキシブル電子デバイスの製造方法
JP6396853B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
WO2017052646A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Island transfer for optical, piezo and rf applications
FR3079346B1 (fr) 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
EP3930429A1 (en) * 2020-06-22 2021-12-29 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with embedded component connected in cavity by anchored first and second polymers

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