CN118525618A - 用于生产用于转移压电层的供体衬底的方法和用于将压电层转移到载体衬底上的方法 - Google Patents

用于生产用于转移压电层的供体衬底的方法和用于将压电层转移到载体衬底上的方法 Download PDF

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Publication number
CN118525618A
CN118525618A CN202380016766.6A CN202380016766A CN118525618A CN 118525618 A CN118525618 A CN 118525618A CN 202380016766 A CN202380016766 A CN 202380016766A CN 118525618 A CN118525618 A CN 118525618A
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CN
China
Prior art keywords
substrate
piezoelectric
polymer layer
donor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380016766.6A
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English (en)
Chinese (zh)
Inventor
M·波卡特
C·查尔斯-阿尔弗雷德
L·卡佩洛
M·洛吉奥
T·巴尔热
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Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of CN118525618A publication Critical patent/CN118525618A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Laminated Bodies (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
CN202380016766.6A 2022-01-17 2023-01-11 用于生产用于转移压电层的供体衬底的方法和用于将压电层转移到载体衬底上的方法 Pending CN118525618A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FRFR2200381 2022-01-17
FR2200381A FR3131980B1 (fr) 2022-01-17 2022-01-17 Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support
PCT/EP2023/050567 WO2023135179A1 (fr) 2022-01-17 2023-01-11 Procédé de fabrication d'un substrat donneur pour le transfert d'une couche piézoélectrique et procédé de transfert d'une couche piézoélectrique sur un substrat support

Publications (1)

Publication Number Publication Date
CN118525618A true CN118525618A (zh) 2024-08-20

Family

ID=81581197

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380016766.6A Pending CN118525618A (zh) 2022-01-17 2023-01-11 用于生产用于转移压电层的供体衬底的方法和用于将压电层转移到载体衬底上的方法

Country Status (8)

Country Link
US (1) US20250176431A1 (https=)
EP (1) EP4466966B1 (https=)
JP (1) JP2025501651A (https=)
KR (1) KR20240135826A (https=)
CN (1) CN118525618A (https=)
FR (1) FR3131980B1 (https=)
TW (1) TW202418979A (https=)
WO (1) WO2023135179A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6372352B2 (ja) * 2013-07-16 2018-08-15 東洋紡株式会社 フレキシブル電子デバイスの製造方法
JP6396853B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
WO2017052646A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Island transfer for optical, piezo and rf applications
FR3079346B1 (fr) 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
EP3930429A1 (en) * 2020-06-22 2021-12-29 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with embedded component connected in cavity by anchored first and second polymers

Also Published As

Publication number Publication date
FR3131980B1 (fr) 2024-01-12
WO2023135179A1 (fr) 2023-07-20
FR3131980A1 (fr) 2023-07-21
JP2025501651A (ja) 2025-01-22
US20250176431A1 (en) 2025-05-29
EP4466966A1 (fr) 2024-11-27
KR20240135826A (ko) 2024-09-12
EP4466966C0 (fr) 2025-12-03
TW202418979A (zh) 2024-05-01
EP4466966B1 (fr) 2025-12-03

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