KR20240135826A - 압전층 전사를 위한 도너 기판의 제조 방법 및 압전층을 지지 기판 상으로 전사하는 방법 - Google Patents
압전층 전사를 위한 도너 기판의 제조 방법 및 압전층을 지지 기판 상으로 전사하는 방법 Download PDFInfo
- Publication number
- KR20240135826A KR20240135826A KR1020247027371A KR20247027371A KR20240135826A KR 20240135826 A KR20240135826 A KR 20240135826A KR 1020247027371 A KR1020247027371 A KR 1020247027371A KR 20247027371 A KR20247027371 A KR 20247027371A KR 20240135826 A KR20240135826 A KR 20240135826A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- piezoelectric
- polymer layer
- donor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Laminated Bodies (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FRFR2200381 | 2022-01-17 | ||
| FR2200381A FR3131980B1 (fr) | 2022-01-17 | 2022-01-17 | Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support |
| PCT/EP2023/050567 WO2023135179A1 (fr) | 2022-01-17 | 2023-01-11 | Procédé de fabrication d'un substrat donneur pour le transfert d'une couche piézoélectrique et procédé de transfert d'une couche piézoélectrique sur un substrat support |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20240135826A true KR20240135826A (ko) | 2024-09-12 |
Family
ID=81581197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247027371A Pending KR20240135826A (ko) | 2022-01-17 | 2023-01-11 | 압전층 전사를 위한 도너 기판의 제조 방법 및 압전층을 지지 기판 상으로 전사하는 방법 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20250176431A1 (https=) |
| EP (1) | EP4466966B1 (https=) |
| JP (1) | JP2025501651A (https=) |
| KR (1) | KR20240135826A (https=) |
| CN (1) | CN118525618A (https=) |
| FR (1) | FR3131980B1 (https=) |
| TW (1) | TW202418979A (https=) |
| WO (1) | WO2023135179A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6372352B2 (ja) * | 2013-07-16 | 2018-08-15 | 東洋紡株式会社 | フレキシブル電子デバイスの製造方法 |
| JP6396853B2 (ja) * | 2015-06-02 | 2018-09-26 | 信越化学工業株式会社 | 酸化物単結晶薄膜を備えた複合ウェーハの製造方法 |
| WO2017052646A1 (en) * | 2015-09-25 | 2017-03-30 | Intel Corporation | Island transfer for optical, piezo and rf applications |
| FR3079346B1 (fr) | 2018-03-26 | 2020-05-29 | Soitec | Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique |
| EP3930429A1 (en) * | 2020-06-22 | 2021-12-29 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier with embedded component connected in cavity by anchored first and second polymers |
-
2022
- 2022-01-17 FR FR2200381A patent/FR3131980B1/fr active Active
- 2022-12-22 TW TW111149571A patent/TW202418979A/zh unknown
-
2023
- 2023-01-11 KR KR1020247027371A patent/KR20240135826A/ko active Pending
- 2023-01-11 WO PCT/EP2023/050567 patent/WO2023135179A1/fr not_active Ceased
- 2023-01-11 CN CN202380016766.6A patent/CN118525618A/zh active Pending
- 2023-01-11 EP EP23700212.6A patent/EP4466966B1/fr active Active
- 2023-01-11 JP JP2024540589A patent/JP2025501651A/ja active Pending
- 2023-01-11 US US18/729,023 patent/US20250176431A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN118525618A (zh) | 2024-08-20 |
| FR3131980B1 (fr) | 2024-01-12 |
| WO2023135179A1 (fr) | 2023-07-20 |
| FR3131980A1 (fr) | 2023-07-21 |
| JP2025501651A (ja) | 2025-01-22 |
| US20250176431A1 (en) | 2025-05-29 |
| EP4466966A1 (fr) | 2024-11-27 |
| EP4466966C0 (fr) | 2025-12-03 |
| TW202418979A (zh) | 2024-05-01 |
| EP4466966B1 (fr) | 2025-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7256204B2 (ja) | 圧電層を支持基板上に転写する方法 | |
| FR2922359A1 (fr) | Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire | |
| EP2764535B1 (fr) | Procédé de double report de couche | |
| FR2938702A1 (fr) | Preparation de surface d'un substrat saphir pour la realisation d'heterostructures | |
| FR2857953A1 (fr) | Structure empilee, et procede pour la fabriquer | |
| US20250176430A1 (en) | Method for producing a donor substrate for transferring a piezoelectric layer, and method for transferring a piezoelectric layer to a carrier substrate | |
| KR20240135826A (ko) | 압전층 전사를 위한 도너 기판의 제조 방법 및 압전층을 지지 기판 상으로 전사하는 방법 | |
| JP2012178605A (ja) | ポリマー膜上にエレクトロニクス構成部品を分子接合する方法 | |
| JP2009500819A (ja) | 酸化物もしくは窒化物の薄い結合層を堆積することによる基板の組み立て方法 | |
| CN115315781A (zh) | 接合晶圆的制造方法及接合晶圆 | |
| US20250255187A1 (en) | Piezoelectric-on-insulator (poi) substrate and method for producing a piezoelectric-on-insulator (poi) substrate | |
| WO2010063636A1 (fr) | Lingot formé de lingots élementaires, plaquette issue de ce lingot et procédé associé | |
| JP2025533337A (ja) | 圧電薄膜転写方法に用いられるドナー基板を製造する方法 | |
| TW202027289A (zh) | 發光元件用半導體基板之製造方法及發光元件之製造方法 | |
| FR2915624A1 (fr) | Procedes de collage et de fabrication d'un substrat du type a couche enterree tres fine. | |
| JP2025501651A5 (https=) | ||
| FR2914494A1 (fr) | Procede de report d'une couche mince de materiau |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20240814 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application |