JP2025501651A - 圧電層の移転のためのドナー基板の製造のためのプロセス及び支持基板への圧電層の移転のためのプロセス - Google Patents

圧電層の移転のためのドナー基板の製造のためのプロセス及び支持基板への圧電層の移転のためのプロセス Download PDF

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Publication number
JP2025501651A
JP2025501651A JP2024540589A JP2024540589A JP2025501651A JP 2025501651 A JP2025501651 A JP 2025501651A JP 2024540589 A JP2024540589 A JP 2024540589A JP 2024540589 A JP2024540589 A JP 2024540589A JP 2025501651 A JP2025501651 A JP 2025501651A
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Prior art keywords
substrate
piezoelectric
polymer layer
donor
layer
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Pending
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JP2024540589A
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Japanese (ja)
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JP2025501651A5 (https=
Inventor
マルセル ブロエカルト，
セドリック チャールズ‐アルフレッド，
ルシアナ カペッロ，
モルガン ロギウ，
ティエリー バルジュ，
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Soitec SA
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Soitec SA
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Publication of JP2025501651A publication Critical patent/JP2025501651A/ja
Publication of JP2025501651A5 publication Critical patent/JP2025501651A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Laminated Bodies (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
JP2024540589A 2022-01-17 2023-01-11 圧電層の移転のためのドナー基板の製造のためのプロセス及び支持基板への圧電層の移転のためのプロセス Pending JP2025501651A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR2200381 2022-01-17
FR2200381A FR3131980B1 (fr) 2022-01-17 2022-01-17 Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support
PCT/EP2023/050567 WO2023135179A1 (fr) 2022-01-17 2023-01-11 Procédé de fabrication d'un substrat donneur pour le transfert d'une couche piézoélectrique et procédé de transfert d'une couche piézoélectrique sur un substrat support

Publications (2)

Publication Number Publication Date
JP2025501651A true JP2025501651A (ja) 2025-01-22
JP2025501651A5 JP2025501651A5 (https=) 2026-01-05

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ID=81581197

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JP2024540589A Pending JP2025501651A (ja) 2022-01-17 2023-01-11 圧電層の移転のためのドナー基板の製造のためのプロセス及び支持基板への圧電層の移転のためのプロセス

Country Status (8)

Country Link
US (1) US20250176431A1 (https=)
EP (1) EP4466966B1 (https=)
JP (1) JP2025501651A (https=)
KR (1) KR20240135826A (https=)
CN (1) CN118525618A (https=)
FR (1) FR3131980B1 (https=)
TW (1) TW202418979A (https=)
WO (1) WO2023135179A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6372352B2 (ja) * 2013-07-16 2018-08-15 東洋紡株式会社 フレキシブル電子デバイスの製造方法
JP6396853B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
WO2017052646A1 (en) * 2015-09-25 2017-03-30 Intel Corporation Island transfer for optical, piezo and rf applications
FR3079346B1 (fr) 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
EP3930429A1 (en) * 2020-06-22 2021-12-29 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with embedded component connected in cavity by anchored first and second polymers

Also Published As

Publication number Publication date
CN118525618A (zh) 2024-08-20
FR3131980B1 (fr) 2024-01-12
WO2023135179A1 (fr) 2023-07-20
FR3131980A1 (fr) 2023-07-21
US20250176431A1 (en) 2025-05-29
EP4466966A1 (fr) 2024-11-27
KR20240135826A (ko) 2024-09-12
EP4466966C0 (fr) 2025-12-03
TW202418979A (zh) 2024-05-01
EP4466966B1 (fr) 2025-12-03

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