JP2024516742A - マイクロエレクトロニクスパッケージアセンブリおよび作製方法 - Google Patents

マイクロエレクトロニクスパッケージアセンブリおよび作製方法 Download PDF

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Publication number
JP2024516742A
JP2024516742A JP2023568590A JP2023568590A JP2024516742A JP 2024516742 A JP2024516742 A JP 2024516742A JP 2023568590 A JP2023568590 A JP 2023568590A JP 2023568590 A JP2023568590 A JP 2023568590A JP 2024516742 A JP2024516742 A JP 2024516742A
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Prior art keywords
insulator
coating
flange
leads
top surface
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Pending
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JP2023568590A
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Japanese (ja)
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JP2024516742A5 (cg-RX-API-DMAC7.html
Inventor
コタンダパニ，ラメッシ
ジョンソン，クリストファー
ティー，ゼンウェイ
ドゥ・レオン・ノエル
タン，シンリ
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マテリオン コーポレイション
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Publication of JP2024516742A publication Critical patent/JP2024516742A/ja
Publication of JP2024516742A5 publication Critical patent/JP2024516742A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/461—Leadframes specially adapted for cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/254—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/042—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/04—Manufacture or treatment of leadframes
    • H10W70/048—Mechanical treatments, e.g. punching, cutting, deforming or cold welding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/435—Shapes or dispositions of insulating layers on leadframes, e.g. bridging members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/457—Materials of metallic layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/456—Materials
    • H10W70/458—Materials of insulating layers on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/134—Containers comprising a conductive base serving as an interconnection having other interconnections parallel to the conductive base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H10W76/157—Containers comprising an insulating or insulated base having interconnections parallel to the insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/209—Vertical interconnections, e.g. vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/251—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for monolithic microwave integrated circuits [MMIC]

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
JP2023568590A 2021-05-07 2022-05-05 マイクロエレクトロニクスパッケージアセンブリおよび作製方法 Pending JP2024516742A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163185768P 2021-05-07 2021-05-07
US63/185,768 2021-05-07
PCT/US2022/027846 WO2022235914A1 (en) 2021-05-07 2022-05-05 Microelectronics package assemblies and processes for making

Publications (2)

Publication Number Publication Date
JP2024516742A true JP2024516742A (ja) 2024-04-16
JP2024516742A5 JP2024516742A5 (cg-RX-API-DMAC7.html) 2025-05-07

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JP2023568590A Pending JP2024516742A (ja) 2021-05-07 2022-05-05 マイクロエレクトロニクスパッケージアセンブリおよび作製方法

Country Status (5)

Country Link
US (1) US12074099B2 (cg-RX-API-DMAC7.html)
JP (1) JP2024516742A (cg-RX-API-DMAC7.html)
KR (1) KR102914493B1 (cg-RX-API-DMAC7.html)
CN (1) CN117280457A (cg-RX-API-DMAC7.html)
WO (1) WO2022235914A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12224218B2 (en) * 2022-02-11 2025-02-11 Wolfspeed, Inc. Semiconductor packages with increased power handling
USD1056862S1 (en) 2022-08-24 2025-01-07 Wolfspeed, Inc. Semiconductor package
GB2635648A (en) * 2023-10-17 2025-05-28 Trak Microwave Ltd Radio frequency components and manufacturing of radio-frequency components
TWI866712B (zh) * 2023-12-21 2024-12-11 矽品精密工業股份有限公司 散熱結構及其電子封裝件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128555A (cg-RX-API-DMAC7.html) * 1974-09-04 1976-03-10 Nippon Electric Co
JPS58500463A (ja) * 1981-03-23 1983-03-24 モトロ−ラ・インコ−ポレ−テッド めっきのしてないパッケ−ジを含む半導体デバイス
JP2006196810A (ja) * 2005-01-17 2006-07-27 Kyocera Corp セラミック回路基板および電子部品モジュール
JP2007165494A (ja) * 2005-12-13 2007-06-28 Dainippon Printing Co Ltd センサーパッケージおよびその製造方法
WO2013175697A1 (ja) * 2012-05-22 2013-11-28 パナソニック株式会社 窒化物半導体発光装置
JP2017518640A (ja) * 2014-05-23 2017-07-06 マテリオン コーポレイション エアキャビティパッケージ
JP6849267B1 (ja) * 2020-10-21 2021-03-24 冨士ダイス株式会社 ダイヤモンド基複合材料及びその製造方法、放熱部材及びエレクトロニクスデバイス

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
SG157957A1 (en) * 2003-01-29 2010-01-29 Interplex Qlp Inc Package for integrated circuit die
US6903013B2 (en) 2003-05-16 2005-06-07 Chartered Semiconductor Manufacturing Ltd. Method to fill a trench and tunnel by using ALD seed layer and electroless plating
US7731078B2 (en) * 2004-11-13 2010-06-08 Stats Chippac Ltd. Semiconductor system with fine pitch lead fingers
US8617926B2 (en) * 2010-09-09 2013-12-31 Advanced Micro Devices, Inc. Semiconductor chip device with polymeric filler trench
EP2973672B1 (en) 2013-03-15 2018-07-11 Materion Corporation Method of spot-welding a die bond sheet preform containing gold and tin to a die bond area on a semiconductor package
US10211115B2 (en) 2014-05-21 2019-02-19 Materion Corporation Method of making a ceramic combo lid with selective and edge metallizations
US9543170B2 (en) * 2014-08-22 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of forming the same
US10163743B2 (en) * 2016-05-20 2018-12-25 Materion Corporation Copper flanged air cavity packages for high frequency devices
US11646255B2 (en) * 2021-03-18 2023-05-09 Taiwan Semiconductor Manufacturing Company Limited Chip package structure including a silicon substrate interposer and methods for forming the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128555A (cg-RX-API-DMAC7.html) * 1974-09-04 1976-03-10 Nippon Electric Co
JPS58500463A (ja) * 1981-03-23 1983-03-24 モトロ−ラ・インコ−ポレ−テッド めっきのしてないパッケ−ジを含む半導体デバイス
JP2006196810A (ja) * 2005-01-17 2006-07-27 Kyocera Corp セラミック回路基板および電子部品モジュール
JP2007165494A (ja) * 2005-12-13 2007-06-28 Dainippon Printing Co Ltd センサーパッケージおよびその製造方法
WO2013175697A1 (ja) * 2012-05-22 2013-11-28 パナソニック株式会社 窒化物半導体発光装置
JP2017518640A (ja) * 2014-05-23 2017-07-06 マテリオン コーポレイション エアキャビティパッケージ
JP6849267B1 (ja) * 2020-10-21 2021-03-24 冨士ダイス株式会社 ダイヤモンド基複合材料及びその製造方法、放熱部材及びエレクトロニクスデバイス

Also Published As

Publication number Publication date
TW202249583A (zh) 2022-12-16
KR20240006626A (ko) 2024-01-15
WO2022235914A1 (en) 2022-11-10
US20220359351A1 (en) 2022-11-10
KR102914493B1 (ko) 2026-01-16
US12074099B2 (en) 2024-08-27
CN117280457A (zh) 2023-12-22

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