JP2023548240A - エピタキシャル欠陥となるグローイン核を低減したシリコン基板を形成する方法およびエピタキシャルウエハを形成する方法 - Google Patents

エピタキシャル欠陥となるグローイン核を低減したシリコン基板を形成する方法およびエピタキシャルウエハを形成する方法 Download PDF

Info

Publication number
JP2023548240A
JP2023548240A JP2023528068A JP2023528068A JP2023548240A JP 2023548240 A JP2023548240 A JP 2023548240A JP 2023528068 A JP2023528068 A JP 2023528068A JP 2023528068 A JP2023528068 A JP 2023528068A JP 2023548240 A JP2023548240 A JP 2023548240A
Authority
JP
Japan
Prior art keywords
silicon
ingot
segment
atoms
constant diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023528068A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023548240A5 (enExample
Inventor
ドゥキーニ，ヤヌーシャ
ヴァルコッツェーナ，ピエトロ
ポッリーニ，マリア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Publication of JP2023548240A publication Critical patent/JP2023548240A/ja
Publication of JP2023548240A5 publication Critical patent/JP2023548240A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023528068A 2020-11-11 2020-12-29 エピタキシャル欠陥となるグローイン核を低減したシリコン基板を形成する方法およびエピタキシャルウエハを形成する方法 Pending JP2023548240A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063112424P 2020-11-11 2020-11-11
US63/112,424 2020-11-11
PCT/EP2020/087962 WO2022100875A1 (en) 2020-11-11 2020-12-29 Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer

Publications (2)

Publication Number Publication Date
JP2023548240A true JP2023548240A (ja) 2023-11-15
JP2023548240A5 JP2023548240A5 (enExample) 2023-12-28

Family

ID=74186650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023528068A Pending JP2023548240A (ja) 2020-11-11 2020-12-29 エピタキシャル欠陥となるグローイン核を低減したシリコン基板を形成する方法およびエピタキシャルウエハを形成する方法

Country Status (7)

Country Link
US (2) US11987900B2 (enExample)
EP (1) EP4244413A1 (enExample)
JP (1) JP2023548240A (enExample)
KR (1) KR102906500B1 (enExample)
CN (1) CN116648533B (enExample)
TW (1) TWI875905B (enExample)
WO (1) WO2022100875A1 (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11130592A (ja) * 1997-10-29 1999-05-18 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
JP2004091221A (ja) * 2002-08-29 2004-03-25 Sumitomo Mitsubishi Silicon Corp シリコン単結晶とエピタキシャルウェーハ並びにそれらの製造方法
JP2010024120A (ja) * 2008-07-24 2010-02-04 Sumco Corp シリコン単結晶およびその育成方法
JP2020100515A (ja) * 2018-12-19 2020-07-02 株式会社Sumco 石英ガラスルツボ

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3552278B2 (ja) * 1994-06-30 2004-08-11 三菱住友シリコン株式会社 シリコン単結晶の製造方法
JP3460551B2 (ja) * 1997-11-11 2003-10-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
KR20010034789A (ko) 1998-10-14 2001-04-25 헨넬리 헬렌 에프 실질적으로 성장 결점이 없는 에피택시얼 실리콘 웨이퍼
US6458202B1 (en) * 1999-09-02 2002-10-01 Memc Electronic Materials, Inc. Process for preparing single crystal silicon having uniform thermal history
JP4718668B2 (ja) * 2000-06-26 2011-07-06 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP2002064102A (ja) * 2000-08-15 2002-02-28 Wacker Nsce Corp シリコン単結晶基板並びにエピタキシャルシリコンウエハおよびその製造方法
US6547875B1 (en) 2000-09-25 2003-04-15 Mitsubishi Materials Silicon Corporation Epitaxial wafer and a method for manufacturing the same
US6818197B2 (en) * 2000-09-25 2004-11-16 Mitsubishi Materials Silicon Corporation Epitaxial wafer
US20110263126A1 (en) * 2000-11-22 2011-10-27 Sumco Corporation Method for manufacturing a silicon wafer
US20020084451A1 (en) * 2000-12-29 2002-07-04 Mohr Thomas C. Silicon wafers substantially free of oxidation induced stacking faults
JP4192530B2 (ja) 2002-08-27 2008-12-10 株式会社Ｓｕｍｃｏ パーティクルモニター用シリコン単結晶ウェーハの製造方法
JP4236243B2 (ja) * 2002-10-31 2009-03-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの製造方法
JP2004165489A (ja) 2002-11-14 2004-06-10 Sumitomo Mitsubishi Silicon Corp エピタキシャルシリコンウェーハとその製造方法並びに半導体装置
JP4360208B2 (ja) 2003-11-21 2009-11-11 信越半導体株式会社 シリコン単結晶の製造方法
JP4983161B2 (ja) 2005-10-24 2012-07-25 株式会社Ｓｕｍｃｏ シリコン半導体基板およびその製造方法
WO2007137182A2 (en) * 2006-05-19 2007-11-29 Memc Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
US20150044467A1 (en) * 2012-04-23 2015-02-12 Hwajin Jo Method of growing ingot and ingot
DE102017213587A1 (de) * 2017-08-04 2019-02-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11130592A (ja) * 1997-10-29 1999-05-18 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
JP2004091221A (ja) * 2002-08-29 2004-03-25 Sumitomo Mitsubishi Silicon Corp シリコン単結晶とエピタキシャルウェーハ並びにそれらの製造方法
JP2010024120A (ja) * 2008-07-24 2010-02-04 Sumco Corp シリコン単結晶およびその育成方法
JP2020100515A (ja) * 2018-12-19 2020-07-02 株式会社Sumco 石英ガラスルツボ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
阿部孝夫, シリコン 結晶成長とウエーハ加工, JPN6024052663, 20 May 1994 (1994-05-20), pages 45, ISSN: 0005787620 *

Also Published As

Publication number Publication date
TWI875905B (zh) 2025-03-11
CN116648533B (zh) 2026-04-14
US20220220636A1 (en) 2022-07-14
WO2022100875A1 (en) 2022-05-19
US20220145493A1 (en) 2022-05-12
KR20230098871A (ko) 2023-07-04
US11987900B2 (en) 2024-05-21
TW202219330A (zh) 2022-05-16
KR102906500B1 (ko) 2025-12-31
EP4244413A1 (en) 2023-09-20
US11987901B2 (en) 2024-05-21
CN116648533A (zh) 2023-08-25

Similar Documents

Publication Publication Date Title
JP4760729B2 (ja) Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP5246163B2 (ja) Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法
JP4631717B2 (ja) Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法
JP5359874B2 (ja) Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法
CN106715765B (zh) 单晶的制造方法及硅晶片的制造方法
CN103732807B (zh) 晶锭生长设备和制造晶锭的方法
JP2010222241A (ja) Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法
KR101847481B1 (ko) 실리콘 에피택셜 웨이퍼, 그의 제조 방법
EP1498517A1 (en) Method for producing silicon single crystal and, silicon single crystal and silicon wafer
SG189506A1 (en) Method of manufacturing silicon single crystal, silicon single crystal, and wafer
WO2007013189A1 (ja) シリコンウェーハおよびその製造方法
JP2007186376A (ja) エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
JP4567262B2 (ja) エピタキシャルウエハ基板用に強化されたｎ型シリコン材料及びその製造方法
JP5387408B2 (ja) Ｉｇｂｔ用シリコン単結晶ウェーハの製造方法
WO2011013280A1 (ja) シリコンウェーハの熱処理方法
US20220359195A1 (en) Methods for forming an epitaxial wafer
CN113272479A (zh) 控制硅熔融物中的掺杂剂浓度以增强铸锭质量
EP1614774A1 (en) Process for producing single crystal
JPWO1999037833A1 (ja) 単結晶引き上げ装置
KR102906500B1 (ko) 에피택셜 결함들에 대해 감소된 성장 핵들을 갖는 실리콘 기판을 형성하기 위한 방법들 및 에피택셜 웨이퍼를 형성하기 위한 방법들
JP2007070131A (ja) エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP2003246695A (ja) 高濃度にドーピングされたシリコン単結晶の製造方法
CN114808112A (zh) 一种单晶生长方法及晶圆
KR101472354B1 (ko) 실리콘 단결정의 성장 방법 및 실리콘 단결정 잉곳

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20231219

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20241211

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250107

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250402

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250723

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251022

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20260203