CN116648533B - 具有减量致外延缺陷的原生核的硅衬底的形成方法及外延晶片的形成方法 - Google Patents

具有减量致外延缺陷的原生核的硅衬底的形成方法及外延晶片的形成方法

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Publication number
CN116648533B
CN116648533B CN202080107738.1A CN202080107738A CN116648533B CN 116648533 B CN116648533 B CN 116648533B CN 202080107738 A CN202080107738 A CN 202080107738A CN 116648533 B CN116648533 B CN 116648533B
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China
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silicon
ingot
epitaxial
crucible
less
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Chinese (zh)
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CN116648533A (zh
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P·瓦尔科齐纳
M·波里尼
J·杜基尼
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GlobalWafers Co Ltd
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GlobalWafers Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202080107738.1A 2020-11-11 2020-12-29 具有减量致外延缺陷的原生核的硅衬底的形成方法及外延晶片的形成方法 Active CN116648533B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063112424P 2020-11-11 2020-11-11
US63/112,424 2020-11-11
PCT/EP2020/087962 WO2022100875A1 (en) 2020-11-11 2020-12-29 Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer

Publications (2)

Publication Number Publication Date
CN116648533A CN116648533A (zh) 2023-08-25
CN116648533B true CN116648533B (zh) 2026-04-14

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Country Status (7)

Country Link
US (2) US11987900B2 (enExample)
EP (1) EP4244413A1 (enExample)
JP (1) JP2023548240A (enExample)
KR (1) KR102906500B1 (enExample)
CN (1) CN116648533B (enExample)
TW (1) TWI875905B (enExample)
WO (1) WO2022100875A1 (enExample)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812493A (ja) * 1994-06-30 1996-01-16 Sumitomo Sitix Corp シリコン単結晶の製造方法
JPH11130592A (ja) * 1997-10-29 1999-05-18 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
JP2002064102A (ja) * 2000-08-15 2002-02-28 Wacker Nsce Corp シリコン単結晶基板並びにエピタキシャルシリコンウエハおよびその製造方法
DE10047346A1 (de) * 2000-09-25 2002-05-02 Mitsubishi Material Silicon Silicium Wafer zur Abscheidung einer Epitaxieschicht, Epitaxiewafer und Verfahren zur Herstellung desselben
JP2004091221A (ja) * 2002-08-29 2004-03-25 Sumitomo Mitsubishi Silicon Corp シリコン単結晶とエピタキシャルウェーハ並びにそれらの製造方法
JP2005170778A (ja) * 2003-11-21 2005-06-30 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

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JP3460551B2 (ja) * 1997-11-11 2003-10-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
KR20010034789A (ko) 1998-10-14 2001-04-25 헨넬리 헬렌 에프 실질적으로 성장 결점이 없는 에피택시얼 실리콘 웨이퍼
US6458202B1 (en) * 1999-09-02 2002-10-01 Memc Electronic Materials, Inc. Process for preparing single crystal silicon having uniform thermal history
JP4718668B2 (ja) * 2000-06-26 2011-07-06 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
US6818197B2 (en) * 2000-09-25 2004-11-16 Mitsubishi Materials Silicon Corporation Epitaxial wafer
US20110263126A1 (en) * 2000-11-22 2011-10-27 Sumco Corporation Method for manufacturing a silicon wafer
US20020084451A1 (en) * 2000-12-29 2002-07-04 Mohr Thomas C. Silicon wafers substantially free of oxidation induced stacking faults
JP4192530B2 (ja) 2002-08-27 2008-12-10 株式会社Ｓｕｍｃｏ パーティクルモニター用シリコン単結晶ウェーハの製造方法
JP4236243B2 (ja) * 2002-10-31 2009-03-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの製造方法
JP2004165489A (ja) 2002-11-14 2004-06-10 Sumitomo Mitsubishi Silicon Corp エピタキシャルシリコンウェーハとその製造方法並びに半導体装置
JP4983161B2 (ja) 2005-10-24 2012-07-25 株式会社Ｓｕｍｃｏ シリコン半導体基板およびその製造方法
WO2007137182A2 (en) * 2006-05-19 2007-11-29 Memc Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
JP5228671B2 (ja) * 2008-07-24 2013-07-03 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
US20150044467A1 (en) * 2012-04-23 2015-02-12 Hwajin Jo Method of growing ingot and ingot
DE102017213587A1 (de) * 2017-08-04 2019-02-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe
JP7024700B2 (ja) * 2018-12-19 2022-02-24 株式会社Sumco 石英ガラスルツボ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812493A (ja) * 1994-06-30 1996-01-16 Sumitomo Sitix Corp シリコン単結晶の製造方法
JPH11130592A (ja) * 1997-10-29 1999-05-18 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
JP2002064102A (ja) * 2000-08-15 2002-02-28 Wacker Nsce Corp シリコン単結晶基板並びにエピタキシャルシリコンウエハおよびその製造方法
DE10047346A1 (de) * 2000-09-25 2002-05-02 Mitsubishi Material Silicon Silicium Wafer zur Abscheidung einer Epitaxieschicht, Epitaxiewafer und Verfahren zur Herstellung desselben
JP2004091221A (ja) * 2002-08-29 2004-03-25 Sumitomo Mitsubishi Silicon Corp シリコン単結晶とエピタキシャルウェーハ並びにそれらの製造方法
JP2005170778A (ja) * 2003-11-21 2005-06-30 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

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Title
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Also Published As

Publication number Publication date
TWI875905B (zh) 2025-03-11
US20220220636A1 (en) 2022-07-14
WO2022100875A1 (en) 2022-05-19
US20220145493A1 (en) 2022-05-12
KR20230098871A (ko) 2023-07-04
US11987900B2 (en) 2024-05-21
TW202219330A (zh) 2022-05-16
KR102906500B1 (ko) 2025-12-31
EP4244413A1 (en) 2023-09-20
JP2023548240A (ja) 2023-11-15
US11987901B2 (en) 2024-05-21
CN116648533A (zh) 2023-08-25

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