KR102906500B1 - 에피택셜 결함들에 대해 감소된 성장 핵들을 갖는 실리콘 기판을 형성하기 위한 방법들 및 에피택셜 웨이퍼를 형성하기 위한 방법들 - Google Patents

에피택셜 결함들에 대해 감소된 성장 핵들을 갖는 실리콘 기판을 형성하기 위한 방법들 및 에피택셜 웨이퍼를 형성하기 위한 방법들

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Publication number
KR102906500B1
KR102906500B1 KR1020237019176A KR20237019176A KR102906500B1 KR 102906500 B1 KR102906500 B1 KR 102906500B1 KR 1020237019176 A KR1020237019176 A KR 1020237019176A KR 20237019176 A KR20237019176 A KR 20237019176A KR 102906500 B1 KR102906500 B1 KR 102906500B1
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South Korea
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silicon
ingot
segment
boron
melt
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KR20230098871A (ko
Inventor
피에트로 발코쩨나
마리아 포리니
자누스치아 두치니
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글로벌웨이퍼스 씨오., 엘티디.
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020237019176A 2020-11-11 2020-12-29 에피택셜 결함들에 대해 감소된 성장 핵들을 갖는 실리콘 기판을 형성하기 위한 방법들 및 에피택셜 웨이퍼를 형성하기 위한 방법들 Active KR102906500B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063112424P 2020-11-11 2020-11-11
US63/112,424 2020-11-11
PCT/EP2020/087962 WO2022100875A1 (en) 2020-11-11 2020-12-29 Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer

Publications (2)

Publication Number Publication Date
KR20230098871A KR20230098871A (ko) 2023-07-04
KR102906500B1 true KR102906500B1 (ko) 2025-12-31

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KR1020237019176A Active KR102906500B1 (ko) 2020-11-11 2020-12-29 에피택셜 결함들에 대해 감소된 성장 핵들을 갖는 실리콘 기판을 형성하기 위한 방법들 및 에피택셜 웨이퍼를 형성하기 위한 방법들

Country Status (7)

Country Link
US (2) US11987900B2 (enExample)
EP (1) EP4244413A1 (enExample)
JP (1) JP2023548240A (enExample)
KR (1) KR102906500B1 (enExample)
CN (1) CN116648533B (enExample)
TW (1) TWI875905B (enExample)
WO (1) WO2022100875A1 (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064102A (ja) * 2000-08-15 2002-02-28 Wacker Nsce Corp シリコン単結晶基板並びにエピタキシャルシリコンウエハおよびその製造方法
US20060005762A1 (en) * 2002-10-31 2006-01-12 Susumu Maeda Method for producing silicon wafer
US20080236476A1 (en) * 2002-08-27 2008-10-02 Hiroki Murakami Silicon single crystal wafer for particle monitor

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* Cited by examiner, † Cited by third party
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JP3552278B2 (ja) * 1994-06-30 2004-08-11 三菱住友シリコン株式会社 シリコン単結晶の製造方法
JPH11130592A (ja) 1997-10-29 1999-05-18 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
JP3460551B2 (ja) * 1997-11-11 2003-10-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
KR20010034789A (ko) 1998-10-14 2001-04-25 헨넬리 헬렌 에프 실질적으로 성장 결점이 없는 에피택시얼 실리콘 웨이퍼
US6458202B1 (en) * 1999-09-02 2002-10-01 Memc Electronic Materials, Inc. Process for preparing single crystal silicon having uniform thermal history
JP4718668B2 (ja) * 2000-06-26 2011-07-06 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
US6547875B1 (en) 2000-09-25 2003-04-15 Mitsubishi Materials Silicon Corporation Epitaxial wafer and a method for manufacturing the same
US6818197B2 (en) * 2000-09-25 2004-11-16 Mitsubishi Materials Silicon Corporation Epitaxial wafer
US20110263126A1 (en) * 2000-11-22 2011-10-27 Sumco Corporation Method for manufacturing a silicon wafer
US20020084451A1 (en) * 2000-12-29 2002-07-04 Mohr Thomas C. Silicon wafers substantially free of oxidation induced stacking faults
JP4570317B2 (ja) * 2002-08-29 2010-10-27 株式会社Ｓｕｍｃｏ シリコン単結晶とエピタキシャルウェーハ並びにそれらの製造方法
JP2004165489A (ja) 2002-11-14 2004-06-10 Sumitomo Mitsubishi Silicon Corp エピタキシャルシリコンウェーハとその製造方法並びに半導体装置
JP4360208B2 (ja) 2003-11-21 2009-11-11 信越半導体株式会社 シリコン単結晶の製造方法
JP4983161B2 (ja) 2005-10-24 2012-07-25 株式会社Ｓｕｍｃｏ シリコン半導体基板およびその製造方法
WO2007137182A2 (en) * 2006-05-19 2007-11-29 Memc Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
JP5228671B2 (ja) * 2008-07-24 2013-07-03 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
US20150044467A1 (en) * 2012-04-23 2015-02-12 Hwajin Jo Method of growing ingot and ingot
DE102017213587A1 (de) * 2017-08-04 2019-02-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe
JP7024700B2 (ja) * 2018-12-19 2022-02-24 株式会社Sumco 石英ガラスルツボ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002064102A (ja) * 2000-08-15 2002-02-28 Wacker Nsce Corp シリコン単結晶基板並びにエピタキシャルシリコンウエハおよびその製造方法
US20080236476A1 (en) * 2002-08-27 2008-10-02 Hiroki Murakami Silicon single crystal wafer for particle monitor
US20060005762A1 (en) * 2002-10-31 2006-01-12 Susumu Maeda Method for producing silicon wafer

Also Published As

Publication number Publication date
TWI875905B (zh) 2025-03-11
CN116648533B (zh) 2026-04-14
US20220220636A1 (en) 2022-07-14
WO2022100875A1 (en) 2022-05-19
US20220145493A1 (en) 2022-05-12
KR20230098871A (ko) 2023-07-04
US11987900B2 (en) 2024-05-21
TW202219330A (zh) 2022-05-16
EP4244413A1 (en) 2023-09-20
JP2023548240A (ja) 2023-11-15
US11987901B2 (en) 2024-05-21
CN116648533A (zh) 2023-08-25

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