TWI875905B - 具有減量致磊晶缺陷之原生核之矽基板之形成方法，及磊晶晶圓之形成方法 - Google Patents

具有減量致磊晶缺陷之原生核之矽基板之形成方法，及磊晶晶圓之形成方法 Download PDF

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TWI875905B
TWI875905B TW109146070A TW109146070A TWI875905B TW I875905 B TWI875905 B TW I875905B TW 109146070 A TW109146070 A TW 109146070A TW 109146070 A TW109146070 A TW 109146070A TW I875905 B TWI875905 B TW I875905B
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Taiwan
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silicon
segment
ingot
diameter portion
constant diameter
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TW109146070A
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TW202219330A (zh
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皮特羅 維克那
瑪莉亞 波瑞尼
傑西亞 道奇里
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環球晶圓股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW109146070A 2020-11-11 2020-12-24 具有減量致磊晶缺陷之原生核之矽基板之形成方法，及磊晶晶圓之形成方法 TWI875905B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063112424P 2020-11-11 2020-11-11
US63/112,424 2020-11-11

Publications (2)

Publication Number Publication Date
TW202219330A TW202219330A (zh) 2022-05-16
TWI875905B true TWI875905B (zh) 2025-03-11

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TW109146070A TWI875905B (zh) 2020-11-11 2020-12-24 具有減量致磊晶缺陷之原生核之矽基板之形成方法，及磊晶晶圓之形成方法

Country Status (7)

Country Link
US (2) US11987900B2 (enExample)
EP (1) EP4244413A1 (enExample)
JP (1) JP2023548240A (enExample)
KR (1) KR102906500B1 (enExample)
CN (1) CN116648533B (enExample)
TW (1) TWI875905B (enExample)
WO (1) WO2022100875A1 (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW538431B (en) * 2000-12-29 2003-06-21 Memc Electronic Materials Silicon wafers substantially free of oxidation induced stacking faults
TW562881B (en) * 1999-09-02 2003-11-21 Memc Electronic Materials Process for preparing single crystal silicon having uniform thermal history

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JP3552278B2 (ja) * 1994-06-30 2004-08-11 三菱住友シリコン株式会社 シリコン単結晶の製造方法
JPH11130592A (ja) 1997-10-29 1999-05-18 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
JP3460551B2 (ja) * 1997-11-11 2003-10-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
KR20010034789A (ko) 1998-10-14 2001-04-25 헨넬리 헬렌 에프 실질적으로 성장 결점이 없는 에피택시얼 실리콘 웨이퍼
JP4718668B2 (ja) * 2000-06-26 2011-07-06 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP2002064102A (ja) * 2000-08-15 2002-02-28 Wacker Nsce Corp シリコン単結晶基板並びにエピタキシャルシリコンウエハおよびその製造方法
US6547875B1 (en) 2000-09-25 2003-04-15 Mitsubishi Materials Silicon Corporation Epitaxial wafer and a method for manufacturing the same
US6818197B2 (en) * 2000-09-25 2004-11-16 Mitsubishi Materials Silicon Corporation Epitaxial wafer
US20110263126A1 (en) * 2000-11-22 2011-10-27 Sumco Corporation Method for manufacturing a silicon wafer
JP4192530B2 (ja) 2002-08-27 2008-12-10 株式会社Ｓｕｍｃｏ パーティクルモニター用シリコン単結晶ウェーハの製造方法
JP4570317B2 (ja) * 2002-08-29 2010-10-27 株式会社Ｓｕｍｃｏ シリコン単結晶とエピタキシャルウェーハ並びにそれらの製造方法
JP4236243B2 (ja) * 2002-10-31 2009-03-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの製造方法
JP2004165489A (ja) 2002-11-14 2004-06-10 Sumitomo Mitsubishi Silicon Corp エピタキシャルシリコンウェーハとその製造方法並びに半導体装置
JP4360208B2 (ja) 2003-11-21 2009-11-11 信越半導体株式会社 シリコン単結晶の製造方法
JP4983161B2 (ja) 2005-10-24 2012-07-25 株式会社Ｓｕｍｃｏ シリコン半導体基板およびその製造方法
WO2007137182A2 (en) * 2006-05-19 2007-11-29 Memc Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
JP5228671B2 (ja) * 2008-07-24 2013-07-03 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
US20150044467A1 (en) * 2012-04-23 2015-02-12 Hwajin Jo Method of growing ingot and ingot
DE102017213587A1 (de) * 2017-08-04 2019-02-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe
JP7024700B2 (ja) * 2018-12-19 2022-02-24 株式会社Sumco 石英ガラスルツボ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW562881B (en) * 1999-09-02 2003-11-21 Memc Electronic Materials Process for preparing single crystal silicon having uniform thermal history
TW538431B (en) * 2000-12-29 2003-06-21 Memc Electronic Materials Silicon wafers substantially free of oxidation induced stacking faults

Also Published As

Publication number Publication date
CN116648533B (zh) 2026-04-14
US20220220636A1 (en) 2022-07-14
WO2022100875A1 (en) 2022-05-19
US20220145493A1 (en) 2022-05-12
KR20230098871A (ko) 2023-07-04
US11987900B2 (en) 2024-05-21
TW202219330A (zh) 2022-05-16
KR102906500B1 (ko) 2025-12-31
EP4244413A1 (en) 2023-09-20
JP2023548240A (ja) 2023-11-15
US11987901B2 (en) 2024-05-21
CN116648533A (zh) 2023-08-25

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