|
US5981398A
(en)
|
1998-04-10 |
1999-11-09 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Hard mask method for forming chlorine containing plasma etched layer
|
|
FI118804B
(fi)
|
1999-12-03 |
2008-03-31 |
Asm Int |
Menetelmä oksidikalvojen kasvattamiseksi
|
|
KR100366621B1
(ko)
|
2000-06-28 |
2003-01-09 |
삼성전자 주식회사 |
반도체 소자의 도전성 콘택체를 형성하는 방법
|
|
US6632741B1
(en)
|
2000-07-19 |
2003-10-14 |
International Business Machines Corporation |
Self-trimming method on looped patterns
|
|
US20040235303A1
(en)
|
2001-05-04 |
2004-11-25 |
Lam Research Corporation |
Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy
|
|
US20040025791A1
(en)
|
2002-08-09 |
2004-02-12 |
Applied Materials, Inc. |
Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
|
|
US20070212850A1
(en)
|
2002-09-19 |
2007-09-13 |
Applied Materials, Inc. |
Gap-fill depositions in the formation of silicon containing dielectric materials
|
|
KR100583105B1
(ko)
|
2003-12-24 |
2006-05-23 |
주식회사 하이닉스반도체 |
반도체 소자의 화학적 기계적 연마 공정의 종말점 검출 방법
|
|
JP4506951B2
(ja)
|
2004-04-23 |
2010-07-21 |
セイコーエプソン株式会社 |
Ｍｆｓ型電界効果トランジスタ、強誘電体メモリならびに半導体装置
|
|
US7429820B2
(en)
|
2004-12-07 |
2008-09-30 |
Motorola, Inc. |
Field emission display with electron trajectory field shaping
|
|
US7429536B2
(en)
|
2005-05-23 |
2008-09-30 |
Micron Technology, Inc. |
Methods for forming arrays of small, closely spaced features
|
|
US7560390B2
(en)
|
2005-06-02 |
2009-07-14 |
Micron Technology, Inc. |
Multiple spacer steps for pitch multiplication
|
|
US7195999B2
(en)
|
2005-07-07 |
2007-03-27 |
Micron Technology, Inc. |
Metal-substituted transistor gates
|
|
US20070018214A1
(en)
|
2005-07-25 |
2007-01-25 |
Micron Technology, Inc. |
Magnesium titanium oxide films
|
|
US7696101B2
(en)
|
2005-11-01 |
2010-04-13 |
Micron Technology, Inc. |
Process for increasing feature density during the manufacture of a semiconductor device
|
|
KR100714305B1
(ko)
|
2005-12-26 |
2007-05-02 |
삼성전자주식회사 |
자기정렬 이중패턴의 형성방법
|
|
US7579278B2
(en)
|
2006-03-23 |
2009-08-25 |
Micron Technology, Inc. |
Topography directed patterning
|
|
US8110242B2
(en)
|
2006-03-24 |
2012-02-07 |
Zimmer, Inc. |
Methods of preparing hydrogel coatings
|
|
US7488659B2
(en)
|
2007-03-28 |
2009-02-10 |
International Business Machines Corporation |
Structure and methods for stress concentrating spacer
|
|
US8283255B2
(en)
|
2007-05-24 |
2012-10-09 |
Lam Research Corporation |
In-situ photoresist strip during plasma etching of active hard mask
|
|
CN101345191A
(zh)
|
2007-07-10 |
2009-01-14 |
力晶半导体股份有限公司 |
光致抗蚀剂层的重工方法与图案化工艺
|
|
JP2009141227A
(ja)
|
2007-12-08 |
2009-06-25 |
Tokyo Electron Ltd |
チタン膜の成膜方法及びチタン膜の成膜装置
|
|
US8148269B2
(en)
|
2008-04-04 |
2012-04-03 |
Applied Materials, Inc. |
Boron nitride and boron-nitride derived materials deposition method
|
|
US20090305506A1
(en)
|
2008-06-09 |
2009-12-10 |
Joerg Linz |
Self-aligned dual patterning integration scheme
|
|
US8084310B2
(en)
|
2008-10-23 |
2011-12-27 |
Applied Materials, Inc. |
Self-aligned multi-patterning for advanced critical dimension contacts
|
|
US8273634B2
(en)
|
2008-12-04 |
2012-09-25 |
Micron Technology, Inc. |
Methods of fabricating substrates
|
|
DE102009014418B3
(de)
|
2009-03-26 |
2010-04-15 |
Heraeus Quarzglas Gmbh & Co. Kg |
Ziehverfahren zur Herstellung zylinderförmiger Bauteile aus Quarzglas
|
|
US8268727B2
(en)
|
2009-04-20 |
2012-09-18 |
GlobalFoundries, Inc. |
Methods for fabricating FinFET semiconductor devices using planarized spacers
|
|
JP5356516B2
(ja)
|
2009-05-20 |
2013-12-04 |
株式会社東芝 |
凹凸パターン形成方法
|
|
JP2011014872A
(ja)
|
2009-06-04 |
2011-01-20 |
Tokyo Electron Ltd |
アモルファスカーボン膜の形成方法および形成装置
|
|
JP5075897B2
(ja)
|
2009-09-25 |
2012-11-21 |
株式会社東芝 |
半導体装置の製造方法
|
|
JP4733214B1
(ja)
|
2010-04-02 |
2011-07-27 |
東京エレクトロン株式会社 |
マスクパターンの形成方法及び半導体装置の製造方法
|
|
US9390909B2
(en)
|
2013-11-07 |
2016-07-12 |
Novellus Systems, Inc. |
Soft landing nanolaminates for advanced patterning
|
|
US8138097B1
(en)
|
2010-09-20 |
2012-03-20 |
Kabushiki Kaisha Toshiba |
Method for processing semiconductor structure and device based on the same
|
|
US9685320B2
(en)
|
2010-09-23 |
2017-06-20 |
Lam Research Corporation |
Methods for depositing silicon oxide
|
|
JP5743488B2
(ja)
|
2010-10-26 |
2015-07-01 |
株式会社日立国際電気 |
基板処理装置および半導体装置の製造方法
|
|
US8288083B2
(en)
|
2010-11-05 |
2012-10-16 |
Micron Technology, Inc. |
Methods of forming patterned masks
|
|
US8901016B2
(en)
|
2010-12-28 |
2014-12-02 |
Asm Japan K.K. |
Method of forming metal oxide hardmask
|
|
KR101172272B1
(ko)
|
2010-12-30 |
2012-08-09 |
에스케이하이닉스 주식회사 |
매립비트라인을 구비한 반도체장치 제조 방법
|
|
JP5638413B2
(ja)
|
2011-02-08 |
2014-12-10 |
東京エレクトロン株式会社 |
マスクパターンの形成方法
|
|
US8883649B2
(en)
|
2011-03-23 |
2014-11-11 |
International Business Machines Corporation |
Sidewall image transfer process
|
|
US8586478B2
(en)
|
2011-03-28 |
2013-11-19 |
Renesas Electronics Corporation |
Method of making a semiconductor device
|
|
US8298951B1
(en)
|
2011-04-13 |
2012-10-30 |
Asm Japan K.K. |
Footing reduction using etch-selective layer
|
|
US8822137B2
(en)
|
2011-08-03 |
2014-09-02 |
International Business Machines Corporation |
Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication
|
|
US8809169B2
(en)
|
2011-09-30 |
2014-08-19 |
Tokyo Electron Limited |
Multi-layer pattern for alternate ALD processes
|
|
US8629040B2
(en)
|
2011-11-16 |
2014-01-14 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods for epitaxially growing active regions between STI regions
|
|
US8592328B2
(en)
|
2012-01-20 |
2013-11-26 |
Novellus Systems, Inc. |
Method for depositing a chlorine-free conformal sin film
|
|
US8802510B2
(en)
*
|
2012-02-22 |
2014-08-12 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods for controlling line dimensions in spacer alignment double patterning semiconductor processing
|
|
KR101901320B1
(ko)
|
2012-05-22 |
2018-09-21 |
삼성전자주식회사 |
발광소자 및 그 제조방법
|
|
US9269747B2
(en)
|
2012-08-23 |
2016-02-23 |
Micron Technology, Inc. |
Self-aligned interconnection for integrated circuits
|
|
JP2014072226A
(ja)
|
2012-09-27 |
2014-04-21 |
Tokyo Electron Ltd |
パターン形成方法
|
|
KR102052936B1
(ko)
|
2012-11-13 |
2019-12-06 |
삼성전자 주식회사 |
반도체 소자 제조 방법
|
|
CN103839783B
(zh)
|
2012-11-21 |
2017-06-09 |
中芯国际集成电路制造(上海)有限公司 |
自对准双重图形的形成方法
|
|
US9362133B2
(en)
|
2012-12-14 |
2016-06-07 |
Lam Research Corporation |
Method for forming a mask by etching conformal film on patterned ashable hardmask
|
|
US8623770B1
(en)
|
2013-02-21 |
2014-01-07 |
HGST Netherlands B.V. |
Method for sidewall spacer line doubling using atomic layer deposition of a titanium oxide
|
|
JP6026375B2
(ja)
|
2013-09-02 |
2016-11-16 |
株式会社東芝 |
半導体装置の製造方法
|
|
US20150251917A1
(en)
|
2013-10-21 |
2015-09-10 |
Qualcomm Mems Technologies, Inc. |
Method of patterning pillars
|
|
US9123776B2
(en)
|
2013-12-04 |
2015-09-01 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Self-aligned double spacer patterning process
|
|
US9177797B2
(en)
|
2013-12-04 |
2015-11-03 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography using high selectivity spacers for pitch reduction
|
|
US9614053B2
(en)
|
2013-12-05 |
2017-04-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Spacers with rectangular profile and methods of forming the same
|
|
JP6692754B2
(ja)
|
2014-01-13 |
2020-05-13 |
アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ |
空間的原子層堆積法による、自己整合ダブルパターニング
|
|
US9437447B2
(en)
*
|
2014-02-23 |
2016-09-06 |
Tokyo Electron Limited |
Method for patterning a substrate for planarization
|
|
US9660080B2
(en)
|
2014-02-28 |
2017-05-23 |
Stmicroelectronics, Inc. |
Multi-layer strained channel FinFET
|
|
WO2016022518A1
(en)
|
2014-08-08 |
2016-02-11 |
Applied Materials, Inc. |
Multi materials and selective removal enabled reverse tone process
|
|
US9318334B2
(en)
|
2014-08-27 |
2016-04-19 |
United Microelectronics Corp. |
Method for fabricating semiconductor device
|
|
US9875888B2
(en)
|
2014-10-03 |
2018-01-23 |
Applied Materials, Inc. |
High temperature silicon oxide atomic layer deposition technology
|
|
US9791779B2
(en)
|
2014-10-16 |
2017-10-17 |
Tokyo Electron Limited |
EUV resist etch durability improvement and pattern collapse mitigation
|
|
US9564312B2
(en)
|
2014-11-24 |
2017-02-07 |
Lam Research Corporation |
Selective inhibition in atomic layer deposition of silicon-containing films
|
|
EP3035379B1
(en)
|
2014-12-15 |
2020-07-01 |
IMEC vzw |
Method for blocking a trench portion
|
|
US9673059B2
(en)
*
|
2015-02-02 |
2017-06-06 |
Tokyo Electron Limited |
Method for increasing pattern density in self-aligned patterning integration schemes
|
|
US9530646B2
(en)
|
2015-02-24 |
2016-12-27 |
United Microelectronics Corp. |
Method of forming a semiconductor structure
|
|
US9991132B2
(en)
|
2015-04-17 |
2018-06-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithographic technique incorporating varied pattern materials
|
|
CN106298519A
(zh)
|
2015-05-15 |
2017-01-04 |
联华电子股份有限公司 |
形成半导体结构的方法
|
|
US9653571B2
(en)
|
2015-06-15 |
2017-05-16 |
International Business Machines Corporation |
Freestanding spacer having sub-lithographic lateral dimension and method of forming same
|
|
US9508560B1
(en)
|
2015-06-18 |
2016-11-29 |
International Business Machines Corporation |
SiARC removal with plasma etch and fluorinated wet chemical solution combination
|
|
JP6726834B2
(ja)
|
2015-09-24 |
2020-07-22 |
東京エレクトロン株式会社 |
サブ解像度基板パターニングのためのエッチングマスクを形成する方法
|
|
US10858727B2
(en)
*
|
2016-08-19 |
2020-12-08 |
Applied Materials, Inc. |
High density, low stress amorphous carbon film, and process and equipment for its deposition
|
|
US10832908B2
(en)
|
2016-11-11 |
2020-11-10 |
Lam Research Corporation |
Self-aligned multi-patterning process flow with ALD gapfill spacer mask
|
|
US10134579B2
(en)
|
2016-11-14 |
2018-11-20 |
Lam Research Corporation |
Method for high modulus ALD SiO2 spacer
|
|
US11355353B2
(en)
|
2018-01-30 |
2022-06-07 |
Lam Research Corporation |
Tin oxide mandrels in patterning
|
|
US11398379B2
(en)
*
|
2018-03-20 |
2022-07-26 |
Tokyo Electron Limited |
Platform and method of operating for integrated end-to-end self-aligned multi-patterning process
|
|
US11245034B2
(en)
*
|
2018-04-25 |
2022-02-08 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Semiconductor device and manufacturing method thereof
|
|
JP2020004747A
(ja)
|
2018-06-25 |
2020-01-09 |
ルネサスエレクトロニクス株式会社 |
半導体装置の製造方法
|