JP2023041863A - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- JP2023041863A JP2023041863A JP2023014605A JP2023014605A JP2023041863A JP 2023041863 A JP2023041863 A JP 2023041863A JP 2023014605 A JP2023014605 A JP 2023014605A JP 2023014605 A JP2023014605 A JP 2023014605A JP 2023041863 A JP2023041863 A JP 2023041863A
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- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- emitting device
- semiconductor layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 213
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 21
- 239000011651 chromium Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 347
- 239000000463 material Substances 0.000 description 49
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- 239000002356 single layer Substances 0.000 description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
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- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 239000011147 inorganic material Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- -1 nitride compound Chemical class 0.000 description 6
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 6
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 6
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- 238000004544 sputter deposition Methods 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
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- 238000002310 reflectometry Methods 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000004697 Polyetherimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 3
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229920002313 fluoropolymer Polymers 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 3
- 239000012811 non-conductive material Substances 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001601 polyetherimide Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 229910001000 nickel titanium Inorganic materials 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/69—Details of refractors forming part of the light source
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
Description
第二絶縁構造50cの材料は非導電材料を含む。非導電材料は有機材料、無機材料又は誘電材料を含む。有機材料はSu8、ベンゾシクロブテン(BCB)、パーフルオロシクロブタン(PFCB)、エポキシ樹脂(Epoxy)、アクリル樹脂(Acrylic Resin)、環状オレフィン重合体(COC)、ポリメタクリル酸メチル(PMMA)、ポリエチレンテレフタレート(PET)、ポリカーボネート(PC)、ポリエーテルイミド(Polyetherimide)又はフルオロカーボン重合体(Fluorocarbon Polymer)を含む。無機材料はシリコーン(Silicone)又はガラス(Glass)を含む。誘電材料は酸化アルミニウム(Al2O3)、窒化ケイ素(SiNx)、酸化ケイ素(SiOx)、酸化チタン(TiOx)、又はフッ化マグネシウム(MgFx)を含む。一実施例において、第二絶縁構造50cは単層又は多層を含む。一実施例において、第二絶縁構造50cは分布ブラッグ反射鏡(DBR)構造であってもよい。具体的に言うと、第二絶縁構造50cはSiOxサブ層及びTiOxサブ層が交互に積層されることで形成されてもよい。第二絶縁構造50c及び第一絶縁構造20cは同じであっても、異なってもよい。
90cの上面図である。図1、図2及び図6Iが示すように、第一電極パッド80c及び第二電極パッド90cの位置及び/又は形状は、第三絶縁構造70cの第一開口701c及び第二開口702cの位置及び/又は形状と略対応する。第一電極パッド80cは第三絶縁構造70cの第一開口701c及び接触層60cの第一接触部601cによって、第一半導体層101cに電気的に接続され、且つ、第二電極パッド90cは第三絶縁構造70cの第二開口702c、接触層60cの第二接触部602c、反射層40c及び透明導電層30cによって、第二半導体層102cに電気的に接続される。発光素子1cを上面視した場合、第一電極パッド80cと第二電極パッド90cが同じ形状を有し、例えば、第一電極パッド80c及び第二電極パッド90cが矩形を含む。しかし、本発明の内容はこれに限定されない。別の実施例において、第一電極パッド80cの形状とサイズが第二電極パッド90cと異なり、これによって、第一電極パッド80cと第二電極パッド90cを区別し、又は発光素子1cにおいて良好な電流分布が得られる。例えば、第一電極パッド80cの形状が矩形であって、第二電極パッド90cの形状が櫛状であって、且つ、第一電極パッド80cの面積が第二電極パッド90cの面積より大きくてもよい。本実施例において、第一電極パッド80c及び第二電極パッド90cは単層又は多層構造を含む。第一電極パッド80c及び第二電極パッド90cの材料が金属材料、例えば、クロム(Cr)、チタン(Ti)、タングステン(W)、アルミニウム(Al)、インジウム(In)、錫(Sn)、ニッケル(Ni)、プラチナ(Pt)又は上記材料の合金を含む。第一電極パッド80c及び第二電極パッド90cが多層構造を含む場合、第一電極パッド80c及び第二電極パッド90cはそれぞれ上電極及び下電極(図示せず)を含む。上電極及び下電極が異なる機能を有する。上電極ははんだ付け又はワイヤボンディングに用いられる。発光素子1cは、反転され、且つはんだ又は金錫共晶接合によって、上電極を介してパッケージ基板(図示せず)に実装される。上電極の金属材料は、高展延性を有する金属材料、例えば、ニッケル(Ni)、コバルト(Co)、鉄(Fe)、チタン(Ti)、銅(Cu)、金(Au)、タングステン(W)、ジルコニウム(Zr)、モリブデン(Mo)、タンタル(Ta)、アルミニウム(Al)、銀(Ag)、プラチナ(Pt)、パラジウム(Pd)、ロジウム(Rh)、イリジウム(Ir)、ルテニウム(Ru)、オスミウム(Os)を含む。上電極は上記材料の単層、多層又は合金であってもよい。本願の一実施例において、上電極の材料はニッケル(Ni)及び/又は金(Au)を含むことが好ましい。下電極の機能は、接触層60c、反射層40c又はバリア層41cと安定した界面を形成し、例えば、下電極と接触層60cとの間の界面接合強度を改善し、又は下電極と反射層40c又はバリア層41cとの間の界面接合強度を改善する。下電極の別の機能は、はんだ(例えば、錫)又は金錫合金(AuSn)が反射構造中まで拡散し、反射構造の反射率を損なうことを防止する。従って、下電極の材料が上電極と異なり、下電極の材料に金(Au)と銅(Cu)以外の金属元素が含まれることが好ましく、例えば、ニッケル(Ni)、コバルト(Co)、鉄(Fe)、チタン(Ti)、タングステン(W)、ジルコニウム(Zr)、モリブデン(Mo)、タンタル(Ta)、アルミニウム(Al)、銀(Ag)、プラチナ(Pt)、パラジウム(Pd)、ロジウム(Rh)、イリジウム(Ir)、ルテニウム(Ru)、オスミウム(Os)を含む。下電極は上記材料の単層、多層又は合金であってもよい。本願の一実施例において、下電極はチタン(Ti)とアルミニウム(Al)の多層膜、又はクロム(Cr)とアルミニウム(Al)の多層膜を含むことが好ましい。
101cに電気的に接続される。一方、第二接触部602cは第二粘着開口512c、第二絶縁開口502c、反射層40c及び第二半導体層102cの面102sに位置する第一透明導電部分f30cによって、第二半導体層102cに電気的に接続される。一実施例において、第一接触部601c及び第二接触部602cは同じ材料であり、且つ多層構造である。
601cと類似する第一部分及び第二部分を含む。第二接触部602cの第一部分及び第二部分の材料が第一接触部601cの第一部分及び第二部分の材料と同じ。一実施例において、反射構造及び第一接触部601cが高反射率を有する同じ材料を含み、反射構造及び第二接触部602cが高反射率を有する同じ材料を含む。一実施例において、反射構造、第一接触部601c及び第二接触部602cは銀(Ag)を含む。
3、4 発光装置
11c 基板
11s 露出面
1000c 発光構造
10c 半導体積層
100c 孔
101c 第一半導体層
102c 第二半導体層
102s 表面
103c 活性層
1011c 第一表面
1012c 第二表面
1001c 第二外側壁
1002c 内側壁
1003c 第一外側壁
20c 第一絶縁構造
201c 囲み絶縁部分
2011c 突出部
2012c 凹陥部
202c 環状被覆エリア
203c 開口
f20c 頂部
s20c 側部
t20c 底部
30c 透明導電層
31c、31c’ 第一導電部
32c、32c’ 第二導電部
33c、33C’ 第三導電部
301c 第一外側辺
302c 第一内側辺
f30c 第一透明導電部分
f30c1 第一外囲
s30c 第二透明導電部分
s30c1 第二外囲
t30c 第三透明導電部分
t30c1 第三外囲
40c 反射層
401c 第二外側辺
402c 第二内側辺
403c、403c’ 第一反射部
404c、404c’ 第二反射部
405c、405c’ 第三反射部
41c バリア層
50c 第二絶縁構造
501c 第一絶縁開口
502c 第二絶縁開口
503 外囲
5031c 突出部
5032c 凹陥部
51c 粘着層
60c 接触層
600c シンブル領域
601c 第一接触部
602c 第二接触部
70c 第三絶縁構造
701c 第一開口
702c 第二開口
80c 第一電極パッド
90c 第二電極パッド
E1 第一境界
E2 第二境界
D、D’ 距離
G 隙間
51 パッケージ基板
511 第一パッド
512 第二パッド
53 絶縁部
54 反射構造
602 ライトカバー
604 反射鏡
606 搭載部
608 発光ユニット
610 発光モジュール
612 ライトベース
614 放熱シート
616 接続部
618 電気接続素子
Claims (10)
- 発光素子であって、
半導体構造、透明導電層と反射構造を含み、
前記半導体構造は、第一半導体層、前記第一半導体層上に位置する第二半導体層、及び前記第一半導体層と前記第二半導体層との間に位置する活性層を含み、前記第一半導体層が第一表面を含み、前記第二半導体層が表面を含み、前記半導体構造が第一外側壁及び第二外側壁を含み、前記第一外側壁及び前記第二外側壁がそれぞれ前記第一半導体層の前記第一表面の一端と他端に接続され、
前記半導体構造はさらに、前記第二外側壁と前記第二半導体層の前記表面の境界である第一縁を含み、上面視において、前記第一縁は前記第二半導体層の前記表面の輪郭であり、
前記透明導電層は、前記第二半導体層の前記表面上に位置し、
前記反射構造は、前記第二半導体層上に位置し、かつ、前記透明導電層の上を被覆し、
前記反射構造は反射層、前記反射層の上に形成されたバリア層、前記反射層の下に形成された第一ブラッグ反射鏡(DBR)構造、及び前記第一ブラッグ反射鏡(DBR)構造と前記反射層との間に位置する接続層を含み、前記反射層が外側辺を有し、
前記第二半導体層の前記第一縁と前記反射層の前記外側辺との間に距離を有し、前記距離は0μmから10μmの間にある、発光素子。 - 前記第一ブラッグ反射鏡(DBR)構造は、二酸化ケイ素(SiO2)を含む第一層により前記反射層に接続される、請求項1に記載の発光素子。
- 前記透明導電層は第一外側辺を含み、
前記第一外側辺は前記反射層の前記外側辺よりも前記第二半導体層の前記第一縁に近い、請求項1に記載の発光素子。 - 前記距離は2μmから8μmの間にある、請求項1に記載の発光素子。
- 前記発光素子は第一絶縁構造をさらに含み、
前記第一絶縁構造は前記第二半導体層の前記表面の一部、及び前記第一半導体層の前記第一表面の一部を被覆する、請求項1に記載の発光素子。 - 前記発光素子は第二絶縁構造をさらに含み、
前記第二絶縁構造は前記反射層又は前記バリア層を露出させる絶縁開口を有し、
前記第二絶縁構造は第二ブラッグ反射鏡(DBR)構造を含む、請求項1に記載の発光素子。 - 前記反射層は銀(Ag)、金(Au)、アルミニウム(Al)、チタン(Ti)、クロム(Cr)、銅(Cu)、ニッケル(Ni)またはプラチナ(Pt)を含む、請求項1に記載の発光素子。
- 前記接続層は酸化インジウム錫(ITO)、酸化亜鉛インジウム(IZO)を含む、請求項1に記載の発光素子。
- 前記反射層は前記半導体構造の前記第二外側壁まで延伸し、かつ、前記第二外側壁を被覆する、請求項1に記載の発光素子。
- 前記発光素子は、前記反射構造上に位置する第一接触部及び第二接触部をさらに含み、
前記第一接触部は前記第一半導体層に電気接続され、かつ、前記第二接触部は前記第二半導体層に電気接続され、
第三ブラッグ反射鏡(DBR)構造を含む第三絶縁構造は、前記第一接触部と前記第二接触部上に位置し、
前記第三絶縁構造は、前記第一接触部と前記第二接触部をそれぞれ露出させる第一開口と第二開口を含む、請求項1に記載の発光素子。
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