JP7246853B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- JP7246853B2 JP7246853B2 JP2018010357A JP2018010357A JP7246853B2 JP 7246853 B2 JP7246853 B2 JP 7246853B2 JP 2018010357 A JP2018010357 A JP 2018010357A JP 2018010357 A JP2018010357 A JP 2018010357A JP 7246853 B2 JP7246853 B2 JP 7246853B2
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- JP
- Japan
- Prior art keywords
- semiconductor layer
- light emitting
- emitting device
- semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 175
- 229910000679 solder Inorganic materials 0.000 claims description 62
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 22
- 239000010936 titanium Substances 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
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- 229910052719 titanium Inorganic materials 0.000 description 11
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- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
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- 239000010941 cobalt Substances 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
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- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
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- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/69—Details of refractors forming part of the light source
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- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
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- F21Y2115/10—Light-emitting diodes [LED]
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- H01L2933/0016—Processes relating to electrodes
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Description
3 従来の発光素子
4 発光装置
10b 半導体積層
11b 基板
20b、20b’ 第一絶縁構造
30 発光装置
30b 透明導電層
40b 反射層
41b バリア層
50b、50b’ 第二絶縁構造
60b、60b’ 接触層
70b 第三絶縁構造
80b 第一はんだパッド
90b 第二はんだパッド
100b 貫通孔
101b 第一半導体層
102b 第二半導体層
102sb 表面
103b 活性層
111b 囲み部
201b 囲み絶縁部分
203b 環状被覆エリア
301tb 開口
401tb 開口
411tb 開口
501b 開口
503b 開口
505b 外囲
600b 第一接触部分
601b 第二接触部分
602b 第三接触部分
701b 第一開口
702b 第二開口
1000b 半導体構造
1002b 内側壁
1001b 第二外側壁
1003b 第一外側壁
1011b 第一表面
1012b 第二表面
2011b 突出部
2012b 凹陥部
5051b 突出部
5052b 凹陥部
f2 故障領域
f3 故障領域
51 パッケージ基板
53 絶縁部
54 反射構造
511 第一パッド
512 第二パッド
602 ライトカバー
604 反射鏡
606 搭載部
608 発光ユニット
610 発光モジュール
612 ライトベース
614 放熱シート
616 接続部
618 電気接続素子
Claims (10)
- 発光素子であって、
第一半導体層、第二半導体層、及び前記第一半導体層と前記第二半導体層との間に位置する活性層を含む半導体構造と、
前記半導体構造を囲み、かつ前記第一半導体層の表面を露出させる囲み部と、
前記半導体構造に位置し、前記第二半導体層の上表面から延伸して前記第一半導体層の前記表面の複数の部分を被覆する複数個の突出部、及び複数個の凹陥部を含む第一絶縁構造と、
前記囲み部に形成され、かつ前記複数個の凹陥部によって前記第一半導体層の前記表面のその他の部分に接触する第一接触部分と、
前記半導体構造に形成された第一はんだパッドと、
前記半導体構造に形成された第二はんだパッドとを含み、
前記発光素子は上面視において矩形であり、複数の辺及び前記複数の辺のうちの隣接する二つの辺によって形成される四つの角部を有し、
前記複数個の突出部及び前記複数個の凹陥部は前記囲み部に沿って交互に形成されて、前記第一半導体層の前記表面のその他の複数の部分を非連続的に露出させ、
前記第一絶縁構造は前記第一半導体層の前記表面の四つの角部を覆うことで、前記第一接触部分は前記四つの角部以外の部分のみに形成される、発光素子。 - 前記半導体構造の幾何中心に形成された第二接触部分をさらに含み、
前記第二接触部分が前記第一半導体層及び前記第二半導体層と電気的に絶縁する、請求項1に記載の発光素子。 - 前記半導体構造に形成された第三接触部分をさらに含み、
前記第三接触部分が前記第一接触部分に囲まれる、請求項1に記載の発光素子。 - 前記半導体構造の幾何中心に形成された第二接触部分をさらに含み、
前記第二接触部分が前記第一接触部分又は前記第三接触部分に接続される、請求項3に記載の発光素子。 - 前記第二半導体層と前記活性層を貫通し、前記第一半導体層を露出させる一つ又は複数個の貫通孔をさらに含む、請求項1に記載の発光素子。
- 前記発光素子はさらに基板を含み、
前記基板は基板表面を有し、
前記囲み部は前記基板表面の一部を露出させて、前記第一半導体層の側壁を前記囲み部において露出される前記基板表面の前記一部に対し傾斜させ、かつ、前記基板表面はパターン化表面を含む、請求項1に記載の発光素子。 - 前記複数個の突出部及び前記複数個の凹陥部が交互に配置される、請求項1に記載の発光素子。
- 前記囲み部に位置し、かつ前記第一絶縁構造を被覆する第二絶縁構造をさらに含み、
前記第二絶縁構造は、前記第一絶縁構造の形状に対応する形状を有する、請求項1に記載の発光素子。 - 前記半導体構造に位置する第三絶縁構造をさらに含み、
前記第三絶縁構造は、第一開口及び第二開口を有し、かつ前記第一はんだパッドが前記第一開口に位置し、前記第二はんだパッドが前記第二開口に位置する、請求項1に記載の発光素子。 - 前記第一接触部分は、前記複数個の凹陥部において前記第一半導体層と接触し、かつ前記複数個の突出部において前記第一半導体層と接触せず、前記第一接触部分は前記第一絶縁構造に沿って凹凸上表面を有する、請求項1に記載の発光素子。
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