JP2014093531A - 発光素子 - Google Patents
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- JP2014093531A JP2014093531A JP2013228932A JP2013228932A JP2014093531A JP 2014093531 A JP2014093531 A JP 2014093531A JP 2013228932 A JP2013228932 A JP 2013228932A JP 2013228932 A JP2013228932 A JP 2013228932A JP 2014093531 A JP2014093531 A JP 2014093531A
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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Abstract
【解決手段】一実施形態に係る発光素子は、第1導電型半導体層、前記第1導電型半導体層の下に活性層、前記活性層の下に第2導電型半導体層を含む発光構造物、前記第1導電型半導体層の上に配置された複数の第1電極、前記第2導電型半導体層に電気的に連結された第2電極、前記第2電極の下に配置された伝導性支持部材、前記複数の第1電極の各々を前記伝導性支持部材に電気的に連結させる複数の第1連結部、前記第2電極に電気的に連結された第2連結部を含み、前記複数の第1電極は前記第1導電型半導体層の上部面で互いに離隔して配置される。
【選択図】図1
Description
11 第1導電型半導体層
12 活性層
13 第2導電型半導体層
15 オーミック接触層
17 反射層
30 チャンネル層
35 第1金属層
40 絶縁層
45 保護膜
50 第2金属層
60 ボンディング層
70 伝導性支持部材
80 第1電極
83 分岐電極
85 ラフネス
87 第2電極
90 第1連結部
95 第2連結部
Claims (22)
- 第1導電型半導体層、前記第1導電型半導体層の下に活性層、前記活性層の下に第2導電型半導体層を含む発光構造物と、
前記第1導電型半導体層の上に配置された複数の第1電極と、
前記第2導電型半導体層に電気的に連結された第2電極と、
前記第2電極の下に配置された伝導性支持部材と、
前記複数の第1電極の各々を前記伝導性支持部材に電気的に連結させる複数の第1連結部と、
前記第2電極に電気的に連結された第2連結部と、を含み、
前記複数の第1電極は、前記第1導電型半導体層の上部面で互いに離隔して配置されたことを特徴とする、発光素子。 - 前記複数の第1電極は、前記第1導電型半導体層の上に点(dot)形状に配置されたことを特徴とする、請求項1に記載の発光素子。
- 前記複数の第1電極は、前記第1導電型半導体層の周りに配置されたことを特徴とする、請求項1または2に記載の発光素子。
- 前記複数の第1電極のうち、互いに隣接した第1電極の間の間隔が100マイクロメートル乃至500マイクロメートルであることを特徴とする、請求項1乃至3のうち、いずれか1項に記載の発光素子。
- 前記複数の第1連結部は、前記発光構造物の側面に配置されたことを特徴とする、請求項1乃至4のうち、いずれか1項に記載の発光素子。
- 前記複数の第1連結部の各々は互いに離隔して配置されたことを特徴とする、請求項5に記載の発光素子。
- 前記発光構造物の下部の周りに配置されたチャンネル層をさらに含み、前記第2連結部の一端は前記チャンネル層の上に配置されたことを特徴とする、請求項1乃至6のうち、いずれか1項に記載の発光素子。
- 前記第2連結部の一端は前記発光構造物の側壁と離隔して配置され、前記発光構造物の側面に露出したことを特徴とする、請求項7に記載の発光素子。
- 前記チャンネル層の上部面は、前記活性層の上部面に比べてより高く配置されたことを特徴とする、請求項7または8に記載の発光素子。
- 前記第2電極は前記第2導電型半導体層の下に配置された金属層を含み、前記第2連結部は前記金属層に電気的に連結されたことを特徴とする、請求項1乃至9のうち、いずれか1項に記載の発光素子。
- 前記金属層と前記伝導性支持部材との間に配置された絶縁層を含むことを特徴とする、請求項10に記載の発光素子。
- 前記絶縁層の上部面は前記発光構造物の下部の周りに露出したことを特徴とする、請求項11に記載の発光素子。
- 前記第1連結部は、前記絶縁層を貫通して前記伝導性支持部材に電気的に連結されたことを特徴とする、請求項11に記載の発光素子。
- 前記第1連結部と前記発光構造物との間に配置された保護膜を含むことを特徴とする、請求項1乃至13のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層は、前記活性層の周りを覆いかぶせるように配置されたことを特徴とする、請求項7乃至9のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層は、前記第2導電型半導体層の周りを覆いかぶせるように配置されたことを特徴とする、請求項7乃至9、15のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端が前記第2導電型半導体層の下に配置されたことを特徴とする、請求項7乃至9、15、16のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端が前記第2導電型半導体層の下部面に接触して配置されたことを特徴とする、請求項7乃至9、請求項15乃至17のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端が前記第2導電型半導体層と前記第2電極との間に配置されたことを特徴とする、請求項7乃至9、請求項15乃至18のうち、いずれか1項に記載の発光素子。
- 前記複数の第1電極は前記第1導電型半導体層の上に数マイクロメートル乃至数十マイクロメートルの幅で形成されたことを特徴とする、請求項1乃至19のうち、いずれか1項に記載の発光素子。
- 前記複数の第1連結部は前記第1導電型半導体層の側面に配置され、前記複数の第1連結部のうち、互いに隣接した前記複数の第1連結部の間の間隔は100マイクロメートル乃至500マイクロメートルの間隔で配置されたことを特徴とする、請求項1乃至20のうち、いずれか1項に記載の発光素子。
- 前記第1連結部は前記第1導電型半導体層の側面に接触して配置されたことを特徴とする、請求項1乃至21のうち、いずれか1項に記載の発光素子。
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KR10-2012-0123510 | 2012-11-02 | ||
KR1020120123510A KR101976459B1 (ko) | 2012-11-02 | 2012-11-02 | 발광소자, 발광소자 패키지 및 라이트 유닛 |
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JP5827666B2 JP5827666B2 (ja) | 2015-12-02 |
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EP (1) | EP2728630A3 (ja) |
JP (1) | JP5827666B2 (ja) |
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JP2018121058A (ja) * | 2017-01-26 | 2018-08-02 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 発光素子 |
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KR102353570B1 (ko) | 2015-08-24 | 2022-01-20 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 이를 구비한 발광 소자 패키지 |
WO2017052344A1 (ko) * | 2015-09-25 | 2017-03-30 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 발광장치 |
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CN111599831A (zh) * | 2019-02-20 | 2020-08-28 | 日亚化学工业株式会社 | 显示装置以及其制造方法 |
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CN111864031A (zh) * | 2019-05-06 | 2020-10-30 | 上海集耀电子有限公司 | 一种led点光源 |
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- 2013-10-31 CN CN201310530407.0A patent/CN103811619B/zh active Active
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JP2018121058A (ja) * | 2017-01-26 | 2018-08-02 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 発光素子 |
JP7246853B2 (ja) | 2017-01-26 | 2023-03-28 | 晶元光電股▲ふん▼有限公司 | 発光素子 |
Also Published As
Publication number | Publication date |
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US20140124731A1 (en) | 2014-05-08 |
CN103811619A (zh) | 2014-05-21 |
CN103811619B (zh) | 2017-04-12 |
JP5827666B2 (ja) | 2015-12-02 |
KR101976459B1 (ko) | 2019-05-09 |
KR20140056976A (ko) | 2014-05-12 |
EP2728630A3 (en) | 2015-08-05 |
EP2728630A2 (en) | 2014-05-07 |
US9190562B2 (en) | 2015-11-17 |
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