JP5827666B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP5827666B2 JP5827666B2 JP2013228932A JP2013228932A JP5827666B2 JP 5827666 B2 JP5827666 B2 JP 5827666B2 JP 2013228932 A JP2013228932 A JP 2013228932A JP 2013228932 A JP2013228932 A JP 2013228932A JP 5827666 B2 JP5827666 B2 JP 5827666B2
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- 239000004065 semiconductor Substances 0.000 claims description 236
- 229910052751 metal Inorganic materials 0.000 claims description 105
- 239000002184 metal Substances 0.000 claims description 105
- 230000002093 peripheral effect Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 629
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 28
- 238000000034 method Methods 0.000 description 26
- 239000000463 material Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 23
- 229910052759 nickel Inorganic materials 0.000 description 22
- 229910052719 titanium Inorganic materials 0.000 description 22
- 229910052802 copper Inorganic materials 0.000 description 18
- 229910052804 chromium Inorganic materials 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 229910052721 tungsten Inorganic materials 0.000 description 16
- 229910052697 platinum Inorganic materials 0.000 description 15
- 239000011787 zinc oxide Substances 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 229910052720 vanadium Inorganic materials 0.000 description 12
- 229910052725 zinc Inorganic materials 0.000 description 12
- 239000011701 zinc Substances 0.000 description 12
- 238000002955 isolation Methods 0.000 description 11
- 229910052750 molybdenum Inorganic materials 0.000 description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 10
- 229960001296 zinc oxide Drugs 0.000 description 10
- 229910017083 AlN Inorganic materials 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 229910010413 TiO 2 Inorganic materials 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- -1 Indium-Aluminum-Zinc- Chemical compound 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
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- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910002668 Pd-Cu Inorganic materials 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
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- 239000002096 quantum dot Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000071 blow moulding Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Description
11 第1導電型半導体層
12 活性層
13 第2導電型半導体層
15 オーミック接触層
17 反射層
30 チャンネル層
35 第1金属層
40 絶縁層
45 保護膜
50 第2金属層
60 ボンディング層
70 伝導性支持部材
80 第1電極
83 分岐電極
85 ラフネス
87 第2電極
90 第1連結部
95 第2連結部
Claims (16)
- 第1導電型半導体層、前記第1導電型半導体層の下に活性層、前記活性層の下に第2導電型半導体層を含む発光構造物と、
前記第1導電型半導体層の上に配置された複数の第1電極と、
前記第2導電型半導体層に電気的に連結された第2電極と、
前記第2電極の下に配置された伝導性支持部材と、
前記複数の第1電極の各々を前記伝導性支持部材に電気的に連結させる複数の第1連結部と、
前記第2電極に電気的に連結された第2連結部と、を含み、
前記複数の第1電極は、前記第1導電型半導体層の上部面の周りに互いに離隔して配置され、
前記複数の第1電極は、前記第1導電型半導体層の上部面の外郭の縁に配置され、
前記複数の第1連結部は、前記発光構造物の側面に沿って配置され、
前記複数の第1連結部は、互いに離隔し、
前記複数の第1連結部の各々は、互いに異なる前記複数の第1電極のいずれかに連結され、前記第1導電型半導体層の側面と接触したことを特徴とする、発光素子。 - 前記複数の第1電極は、前記第1導電型半導体層の上に点(dot)形状に配置されたことを特徴とする、請求項1に記載の発光素子。
- 前記複数の第1電極のうち、互いに隣接した第1電極の間の間隔が100マイクロメートル乃至500マイクロメートルであることを特徴とする、請求項1または2に記載の発光素子。
- 前記発光構造物の下部の周りに配置されたチャンネル層をさらに含み、前記第2連結部の一端は前記チャンネル層の上に配置されたことを特徴とする、請求項1乃至3のうち、いずれか1項に記載の発光素子。
- 前記第2連結部の一端は前記発光構造物の側壁と離隔して配置され、前記発光構造物の側面に露出したことを特徴とする、請求項4に記載の発光素子。
- 前記チャンネル層の上部面は、前記活性層の上部面に比べてより高く配置されたことを特徴とする、請求項4または5に記載の発光素子。
- 前記第2電極は前記第2導電型半導体層の下に配置された金属層を含み、前記第2連結部は前記金属層に電気的に連結されたことを特徴とする、請求項1乃至6のうち、いずれか1項に記載の発光素子。
- 前記金属層と前記伝導性支持部材との間に配置された絶縁層を含むことを特徴とする、請求項7に記載の発光素子。
- 前記絶縁層の上部面は前記発光構造物の下部の周りに露出したことを特徴とする、請求項8に記載の発光素子。
- 前記第1連結部は、前記絶縁層を貫通して前記伝導性支持部材に電気的に連結されたことを特徴とする、請求項8に記載の発光素子。
- 前記チャンネル層は、前記活性層の周りを覆いかぶせるように配置されたことを特徴とする、請求項4乃至6のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層は、前記第2導電型半導体層の周りを覆いかぶせるように配置されたことを特徴とする、請求項4乃至6、11のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端が前記第2導電型半導体層の下に配置されたことを特徴とする、請求項4乃至6、11、12のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端が前記第2導電型半導体層の下部面に接触して配置されたことを特徴とする、請求項4乃至6、請求項11乃至13のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端が前記第2導電型半導体層と前記第2電極との間に配置されたことを特徴とする、請求項4乃至6、請求項11乃至14のうち、いずれか1項に記載の発光素子。
- 前記複数の第1連結部は前記第1導電型半導体層の側面に配置され、前記複数の第1連結部のうち、互いに隣接した前記複数の第1連結部の間の間隔は100マイクロメートル乃至500マイクロメートルの間隔で配置されたことを特徴とする、請求項1乃至15のうち、いずれか1項に記載の発光素子。
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WO2015084258A1 (en) * | 2013-12-02 | 2015-06-11 | Nanyang Technological University | Light-emitting device and method of forming the same |
KR102353570B1 (ko) | 2015-08-24 | 2022-01-20 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 및 이를 구비한 발광 소자 패키지 |
US10497835B2 (en) * | 2015-09-25 | 2019-12-03 | Lg Innotek Co., Ltd. | Light emitting device, light emitting element package, and light emitting device |
CN105911754A (zh) * | 2016-05-05 | 2016-08-31 | 京东方科技集团股份有限公司 | 背光源和显示装置 |
TWI790984B (zh) * | 2017-01-26 | 2023-01-21 | 晶元光電股份有限公司 | 發光元件 |
JP7029624B2 (ja) * | 2019-02-20 | 2022-03-04 | 日亜化学工業株式会社 | 表示装置及びその製造方法 |
CN111599831B (zh) * | 2019-02-20 | 2024-09-20 | 日亚化学工业株式会社 | 显示装置以及其制造方法 |
US11362246B2 (en) | 2019-02-20 | 2022-06-14 | Nichia Corporation | Method of manufacturing display device with lateral wiring |
CN111864031A (zh) * | 2019-05-06 | 2020-10-30 | 上海集耀电子有限公司 | 一种led点光源 |
CN114093996B (zh) * | 2021-11-19 | 2024-06-21 | 淮安澳洋顺昌光电技术有限公司 | 半导体发光器件 |
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DE10017336C2 (de) * | 2000-04-07 | 2002-05-16 | Vishay Semiconductor Gmbh | verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern |
CA2754097C (en) * | 2002-01-28 | 2013-12-10 | Nichia Corporation | Nitride semiconductor device having support substrate and its manufacturing method |
EP1733439B1 (en) | 2004-03-18 | 2013-05-15 | Panasonic Corporation | Nitride based led with a p-type injection region |
JP4384019B2 (ja) * | 2004-12-08 | 2009-12-16 | 住友電気工業株式会社 | ヘッドランプ |
JP4146464B2 (ja) * | 2005-10-11 | 2008-09-10 | Tdk株式会社 | 発光装置 |
JP5016808B2 (ja) * | 2005-11-08 | 2012-09-05 | ローム株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子製造方法 |
DE102007022947B4 (de) | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
KR100891761B1 (ko) | 2007-10-19 | 2009-04-07 | 삼성전기주식회사 | 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지 |
US8008683B2 (en) * | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
JP2010171376A (ja) * | 2008-12-26 | 2010-08-05 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
KR101587539B1 (ko) * | 2009-03-31 | 2016-01-22 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
KR100986318B1 (ko) | 2010-02-09 | 2010-10-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100986560B1 (ko) | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
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KR101039879B1 (ko) | 2010-04-12 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
KR101707118B1 (ko) * | 2010-10-19 | 2017-02-15 | 엘지이노텍 주식회사 | 발광소자 및 그 발광 소자의 제조 방법 |
JP2012138452A (ja) | 2010-12-27 | 2012-07-19 | Panasonic Corp | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
JP5050109B2 (ja) | 2011-03-14 | 2012-10-17 | 株式会社東芝 | 半導体発光素子 |
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JP2014093531A (ja) | 2014-05-19 |
US9190562B2 (en) | 2015-11-17 |
KR101976459B1 (ko) | 2019-05-09 |
CN103811619A (zh) | 2014-05-21 |
US20140124731A1 (en) | 2014-05-08 |
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