JP6210800B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP6210800B2 JP6210800B2 JP2013180900A JP2013180900A JP6210800B2 JP 6210800 B2 JP6210800 B2 JP 6210800B2 JP 2013180900 A JP2013180900 A JP 2013180900A JP 2013180900 A JP2013180900 A JP 2013180900A JP 6210800 B2 JP6210800 B2 JP 6210800B2
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- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Description
11 第1半導体層
12 第1活性層
13 第2半導体層
15 第1オーミック接触層
17 第1反射層
20 第2発光構造物
21 第3半導体層
22 第2活性層
23 第4半導体層
25 第2オーミック接触層
27 第2反射層
30 チャンネル層
35 第1金属層
40 絶縁層
45 第2金属層
50 第3金属層
60 ボンディング層
70 伝導性支持部材
80 第1電極
83 第2電極
85 第3電極
87 第4電極
90 第1連結部
95 第2連結部
97 第3連結部
Claims (20)
- 伝導性支持部材と、
第1導電型の第1半導体層、前記第1半導体層の下に第1活性層、及び前記第1活性層の下に第2導電型の第2半導体層を含み、前記伝導性支持部材の上に配置された第1発光構造物と、
第1導電型の第3半導体層、前記第3半導体層の下に第2活性層、及び前記第2活性層の下に第2導電型の第4半導体層を含み、前記伝導性支持部材の上に配置された第2発光構造物と、
前記第1発光構造物の下部周りと前記第2発光構造物の下部周りに配置されたチャンネル層と、
前記第1半導体層に電気的に連結された第1電極と、
前記第2半導体層に電気的に連結された第2電極と、
前記第3半導体層に電気的に連結された第3電極と、
前記第4半導体層に電気的に連結された第4電極と、
前記第1電極と前記伝導性支持部材に電気的に連結された第1連結部と、
前記第2電極と前記第3電極に電気的に連結された第2連結部と、
前記第4電極と電気的に連結され、一端が前記チャンネル層の上に配置された第3連結部と、
を含み、
前記チャンネル層は、前記第1活性層の周り、前記第2活性層の周り、前記第2半導体層の周り、前記第4半導体層の周りを包むように配置され、前記チャンネル層によって前記第1連結部が前記第1活性層及び前記第2半導体層から絶縁され、
前記第1連結部が前記伝導性支持部材に電気的に連結され、前記伝導性支持部材と前記第3連結部を介して前記第1発光構造物と前記第2発光構造物に電源が直列印加されることを特徴とする、発光素子。 - 前記第1連結部は前記第1半導体層の側面に接触して配置されたことを特徴とする、請求項1に記載の発光素子。
- 前記チャンネル層の上部面は前記第1活性層の上部面と前記第2活性層の上部面に比べてより高く配置されたことを特徴とする、請求項1または2に記載の発光素子。
- 前記第1電極は前記第1半導体層の上に配置されたことを特徴とする、請求項1乃至3のうち、いずれか1項に記載の発光素子。
- 前記第2電極は前記第2半導体層と前記伝導性支持部材との間に配置されたことを特徴とする、請求項1乃至4のうち、いずれか1項に記載の発光素子。
- 前記第3電極は前記第3半導体層の上に配置されたことを特徴とする、請求項1乃至5のうち、いずれか1項に記載の発光素子。
- 前記第4電極は前記第4半導体層と前記伝導性支持部材との間に配置されたことを特徴とする、請求項1乃至6のうち、いずれか1項に記載の発光素子。
- 前記第3連結部の一端は前記第2発光構造物の側面と離隔して配置され、前記第2発光構造物の側面に露出したことを特徴とする、請求項1乃至7のうち、いずれか1項に記載の発光素子。
- 前記第2電極と前記伝導性支持部材との間と、前記第4電極と前記伝導性支持部材との間に配置された絶縁層を含むことを特徴とする、請求項1乃至8のうち、いずれか1項に記載の発光素子。
- 前記絶縁層の上部面は前記第2発光構造物の下部周りに露出されたことを特徴とする、請求項9に記載の発光素子。
- 前記絶縁層は前記チャンネル層の周りを覆いかぶせるように配置されたことを特徴とする、請求項9または10に記載の発光素子。
- 前記第1連結部は前記チャンネル層を貫通して前記伝導性支持部材に電気的に連結されたことを特徴とする、請求項1乃至11のうち、いずれか1項に記載の発光素子。
- 前記第1発光構造物と前記第2発光構造物の上部に配置されたラフネス(roughness)を含むことを特徴とする、請求項1乃至12のうち、いずれか1項に記載の発光素子。
- 前記第2電極の下に配置された拡散障壁層、ボンディング層を含むことを特徴とする、請求項1乃至13のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層は酸化物または窒化物を含むことを特徴とする、請求項1乃至14のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端が前記第2導電型の第2半導体層と前記第2電極との間に配置されたことを特徴とする、請求項1乃至15のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層の一端は、前記第2導電型の第2半導体層の下部面に接触して配置されたことを特徴とする、請求項1乃至16のうち、いずれか1項に記載の発光素子。
- 前記第2連結部は、前記第2発光構造物の側面に配置されたことを特徴とする、請求項1乃至17のうち、いずれか1項に記載の発光素子。
- 前記第2連結部は、前記第2活性層と少なくとも3マイクロメートル以上離隔して配置されたことを特徴とする、請求項1乃至18のうち、いずれか1項に記載の発光素子。
- 前記チャンネル層は、エッチングストッパーであることを特徴とする、請求項1乃至19のうち、いずれか1項に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2012-0098713 | 2012-09-06 | ||
KR1020120098713A KR101956101B1 (ko) | 2012-09-06 | 2012-09-06 | 발광소자 |
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JP2014053606A JP2014053606A (ja) | 2014-03-20 |
JP2014053606A5 JP2014053606A5 (ja) | 2016-10-20 |
JP6210800B2 true JP6210800B2 (ja) | 2017-10-11 |
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JP2013180900A Active JP6210800B2 (ja) | 2012-09-06 | 2013-09-02 | 発光素子 |
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US (1) | US9048368B2 (ja) |
EP (1) | EP2706572B1 (ja) |
JP (1) | JP6210800B2 (ja) |
KR (1) | KR101956101B1 (ja) |
CN (1) | CN103682070B (ja) |
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JP2014053606A (ja) | 2014-03-20 |
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US20140061685A1 (en) | 2014-03-06 |
KR101956101B1 (ko) | 2019-03-11 |
EP2706572A3 (en) | 2015-11-25 |
CN103682070A (zh) | 2014-03-26 |
EP2706572B1 (en) | 2020-05-20 |
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