JP2022543376A - 炭化珪素トランジスタデバイス - Google Patents
炭化珪素トランジスタデバイス Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 14
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 7
- WYDFSSCXUGNICP-CDLQDMDJSA-N C[C@@H]([C@H]1CC[C@H]2[C@@H]3[C@@H]4O[C@@H]4[C@@]4(O)CC=CC(=O)[C@]4(C)[C@H]3CC[C@]12C)[C@H]1C[C@]2(C)O[C@]2(C)C(O)O1 Chemical compound C[C@@H]([C@H]1CC[C@H]2[C@@H]3[C@@H]4O[C@@H]4[C@@]4(O)CC=CC(=O)[C@]4(C)[C@H]3CC[C@]12C)[C@H]1C[C@]2(C)O[C@]2(C)C(O)O1 WYDFSSCXUGNICP-CDLQDMDJSA-N 0.000 claims abstract description 4
- WYDFSSCXUGNICP-UHFFFAOYSA-N 24-methylenecholesta-5,7-dien-3beta-ol Natural products C1C2(C)OC2(C)C(O)OC1C(C)C1C2(C)CCC3C4(C)C(=O)C=CCC4(O)C4OC4C3C2CC1 WYDFSSCXUGNICP-UHFFFAOYSA-N 0.000 claims abstract 3
- 101100073891 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) nic-3 gene Proteins 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 108091006146 Channels Proteins 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 10
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 6
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 238000000151 deposition Methods 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
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- 239000003990 capacitor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018949 PtAu Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
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Abstract
Description
したがって、本発明の目的は、たとえば、先行技術のトレンチデバイスを示す図1Aおよび先行技術のプレーナデバイスを示す図1Bに示されるように、MOSベースのSiCプレーナおよびトレンチデバイスを保護するために耐シュートスルー能力(shoot-through withstand capability)を向上することである。図1Aおよび図1Bの先行技術の両方のデバイスは、縦型スイッチであり、ゲート6によって制御される、n型ソース4からn型ドレイン11へ鉛直に流れる電流をスイッチングする。SiC基板1上には、n型エピタキシャルドリフト層2が設けられている。図1Aおよび図1Bにおける両方のデバイスは、pウェル領域3と、n型ソース領域4と、p型コンタクト領域5と、ゲート誘電体7と、ゲート6とを含む。図1Aに示されるデバイスでは、ゲート6およびゲート誘電体7は、pウェル3を通って延在するトレンチ内に形成されるが、図1Bにおけるゲート構造6,7は、デバイスの頂部にてプレーナである。図1Bに係るプレーナデバイスはさらに、チャネル領域8を詳細に示す。
別の実施形態では、炭化珪素(SiC)トランジスタは、絶縁ゲートバイポーラトランジスタ(IGBT)である。
ロー側のMOSFETとハイ側のMOSFETとの組み合わせにおける上述のフィードバックメカニズム(CgdおよびCgs)に含まれるキャパシタンスの比を制御することによって、VGSパルスは、以下の式によって制限され得る。
Claims (7)
- 炭化珪素(SiC)トランジスタデバイスであって、
頂面を有するSiC半導体基板(1)と、
前記SiC半導体基板(1)の前記頂面上に形成されるSiCエピタキシャル層(2)とを含み、前記SiCエピタキシャル層(2)は頂面を有しており、
前記炭化珪素(SiC)トランジスタデバイスはさらに、
前記SiCエピタキシャル層(2)の前記頂面に形成されるソース構造(3,4,5)を含み、前記ソース構造(3,4,5)は、頂面を有し、かつ、pウェル領域(3)と、n型ソース領域(4)と、p型コンタクト領域(5)とを含み、
前記炭化珪素(SiC)トランジスタデバイスはさらに、
前記ソース構造(3,4,5)の前記頂面の上に形成され、かつ、前記ソース構造(3,4,5)の前記頂面と電気的に接続されるソースコンタクト構造(9)と、
ゲート誘電体(7)およびゲートランナー(6)を含むゲート構造(6,7)と、
p型チャネル領域(10)とを含み、
前記ゲート誘電体(7)は、前記チャネル領域(10)と、前記ソース構造(3,4,5)の少なくとも部分と、前記ソースコンタクト構造(9)の少なくとも部分とを覆い、
前記ゲート誘電体(7)によって前記チャネル領域(10)、前記ソース構造(3,4,5)および前記ソースコンタクト構造(9)から電気的に絶縁される前記ゲートランナー(6)は、前記チャネル領域(10)および前記ソースコンタクト構造(9)の少なくとも部分と重なっている炭化珪素(SiC)トランジスタデバイスにおいて、
前記ソースコンタクト構造(9)は、炭化チタン(TiC)、炭化タングステン(WC)および炭化ニッケル(NiC3)のうちの1つを含み、
前記ゲート構造(6,7)はプレーナ構造であることを特徴とする、炭化珪素(SiC)トランジスタデバイス。 - 前記ソースコンタクト構造(9)は、2nm~200nmの範囲の厚さを有する、請求項1に記載の炭化珪素(SiC)トランジスタデバイス。
- 前記SiC半導体基板(1)は、4H-SiC基板である、請求項1~2のいずれか1項に記載の炭化珪素(SiC)トランジスタデバイス。
- 前記炭化珪素(SiC)トランジスタデバイスは、絶縁ゲートバイポーラトランジスタ(IGBT)である、請求項1~3のいずれか1項に記載の炭化珪素(SiC)トランジスタデバイス。
- 前記炭化珪素(SiC)トランジスタデバイスは、金属酸化物半導体電界効果トランジスタ(MOSFET)である、請求項1~3のいずれか1項に記載の炭化珪素(SiC)トランジスタデバイス。
- 炭化珪素(SiC)トランジスタデバイスを製造するための方法であって、
SiC半導体基板(1)の頂面にSiCエピタキシャル層(2)をエピタキシャルに形成することを含み、前記SiCエピタキシャル層(2)は頂面を有しており、
前記方法はさらに、
前記SiCエピタキシャル層(2)の前記頂面にソース構造(3,4,5)を形成することを含み、前記ソース構造(3,4,5)は、頂面を有し、かつ、pウェル領域(3)、n型ソース領域(4)およびp型コンタクト領域(5)を含み、
前記方法はさらに、
ソースコンタクト構造(9)を前記ソース構造(3,4,5)の前記頂面の上に形成し、かつ、前記ソース構造(3,4,5)の前記頂面に電気的に接続することを含み、前記コンタクト構造(9)は、炭化チタン(TiC)、炭化タングステン(WC)、および炭化ニッケル(NiC3)のうちの1つを含み、
前記方法はさらに、
前記ソースコンタクト構造(9)の形成後、ゲート誘電体(7)およびゲートランナー(6)を含むゲート構造(6,7)を、前記ゲート誘電体(7)が前記ソース構造(3,4,5)の少なくとも部分および前記ソースコンタクト構造(9)の少なくとも部分を覆うように、かつ、前記ゲート誘電体(7)によって前記ソース構造(3,4,5)および前記ソースコンタクト構造(9)から電気的に絶縁される前記ゲートランナー(6)が前記ソースコンタクト構造(9)の少なくとも部分と重なるように形成することを含み、
前記デバイスは、p型チャネル(10)を含み、
前記ゲート構造(6,7)はプレーナ構造である、方法。 - 前記ソースコンタクト構造(9)は、600℃~1300℃の範囲の温度で形成される、請求項6に記載の炭化珪素(SiC)トランジスタデバイスを製造するための方法。
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