|
US7030042B2
(en)
|
2002-08-28 |
2006-04-18 |
Micron Technology, Inc. |
Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
|
|
US20040168627A1
(en)
|
2003-02-27 |
2004-09-02 |
Sharp Laboratories Of America, Inc. |
Atomic layer deposition of oxide film
|
|
US20050070126A1
(en)
*
|
2003-04-21 |
2005-03-31 |
Yoshihide Senzaki |
System and method for forming multi-component dielectric films
|
|
US8728285B2
(en)
|
2003-05-23 |
2014-05-20 |
Demaray, Llc |
Transparent conductive oxides
|
|
FR2857030B1
(fr)
|
2003-07-01 |
2006-10-27 |
Saint Gobain |
Procede de depot d'oxyde de titane par source plasma
|
|
US20050153571A1
(en)
|
2003-11-17 |
2005-07-14 |
Yoshihide Senzaki |
Nitridation of high-k dielectric films
|
|
US7560395B2
(en)
|
2005-01-05 |
2009-07-14 |
Micron Technology, Inc. |
Atomic layer deposited hafnium tantalum oxide dielectrics
|
|
US8993055B2
(en)
*
|
2005-10-27 |
2015-03-31 |
Asm International N.V. |
Enhanced thin film deposition
|
|
US7592251B2
(en)
|
2005-12-08 |
2009-09-22 |
Micron Technology, Inc. |
Hafnium tantalum titanium oxide films
|
|
JP5107541B2
(ja)
|
2006-08-22 |
2012-12-26 |
ルネサスエレクトロニクス株式会社 |
絶縁膜形成方法および半導体装置の製造方法
|
|
US8016945B2
(en)
|
2007-12-21 |
2011-09-13 |
Applied Materials, Inc. |
Hafnium oxide ALD process
|
|
EP2174942B1
(en)
*
|
2008-10-07 |
2011-11-30 |
L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Niobium and vanadium organometallic precursors for thin film deposition
|
|
US8557702B2
(en)
*
|
2009-02-02 |
2013-10-15 |
Asm America, Inc. |
Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
|
|
US8592294B2
(en)
*
|
2010-02-22 |
2013-11-26 |
Asm International N.V. |
High temperature atomic layer deposition of dielectric oxides
|
|
US20110293830A1
(en)
|
2010-02-25 |
2011-12-01 |
Timo Hatanpaa |
Precursors and methods for atomic layer deposition of transition metal oxides
|
|
FR2972447B1
(fr)
|
2011-03-08 |
2019-06-07 |
Saint-Gobain Glass France |
Procede d'obtention d'un substrat muni d'un revetement
|
|
US9223203B2
(en)
|
2011-07-08 |
2015-12-29 |
Asm International N.V. |
Microcontact printed films as an activation layer for selective atomic layer deposition
|
|
US20140318611A1
(en)
|
2011-08-09 |
2014-10-30 |
Solexel, Inc. |
Multi-level solar cell metallization
|
|
JP2014218691A
(ja)
|
2013-05-07 |
2014-11-20 |
エア・ウォーター株式会社 |
層状構造体の製造方法
|
|
US20150380309A1
(en)
*
|
2014-06-26 |
2015-12-31 |
Intermolecular Inc. |
Metal-insulator-semiconductor (MIS) contact with controlled defect density
|
|
US9478411B2
(en)
|
2014-08-20 |
2016-10-25 |
Lam Research Corporation |
Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
|
|
US10134984B1
(en)
|
2014-12-31 |
2018-11-20 |
Crossbar, Inc. |
Two-terminal memory electrode comprising a non-continuous contact surface
|
|
US10714350B2
(en)
*
|
2016-11-01 |
2020-07-14 |
ASM IP Holdings, B.V. |
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
|
|
TWI758363B
(zh)
*
|
2016-12-06 |
2022-03-21 |
美商應用材料股份有限公司 |
用於ald及cvd薄膜沉積之釕前驅物及其用法
|
|
JP2019016778A
(ja)
|
2017-07-07 |
2019-01-31 |
東京エレクトロン株式会社 |
半導体装置の製造方法及び金属酸化物膜の形成方法
|