DE112020002781T5 - Substöchiometrische metalloxid-dünnschichten - Google Patents

Substöchiometrische metalloxid-dünnschichten Download PDF

Info

Publication number
DE112020002781T5
DE112020002781T5 DE112020002781.3T DE112020002781T DE112020002781T5 DE 112020002781 T5 DE112020002781 T5 DE 112020002781T5 DE 112020002781 T DE112020002781 T DE 112020002781T DE 112020002781 T5 DE112020002781 T5 DE 112020002781T5
Authority
DE
Germany
Prior art keywords
metal
pulse
precursor
ald
ligand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112020002781.3T
Other languages
German (de)
English (en)
Inventor
John Rozen
Martin Michael Frank
Yohei Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
International Business Machines Corp
Original Assignee
Ulvac Inc
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, International Business Machines Corp filed Critical Ulvac Inc
Publication of DE112020002781T5 publication Critical patent/DE112020002781T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE112020002781.3T 2019-07-19 2020-07-10 Substöchiometrische metalloxid-dünnschichten Pending DE112020002781T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/516,423 2019-07-19
US16/516,423 US11081343B2 (en) 2019-07-19 2019-07-19 Sub-stoichiometric metal-oxide thin films
PCT/IB2020/056508 WO2021014266A1 (en) 2019-07-19 2020-07-10 Sub-stoichiometric metal-oxide thin films

Publications (1)

Publication Number Publication Date
DE112020002781T5 true DE112020002781T5 (de) 2022-02-24

Family

ID=74192542

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112020002781.3T Pending DE112020002781T5 (de) 2019-07-19 2020-07-10 Substöchiometrische metalloxid-dünnschichten

Country Status (6)

Country Link
US (2) US11081343B2 (https=)
JP (1) JP7493580B2 (https=)
CN (1) CN114072537A (https=)
DE (1) DE112020002781T5 (https=)
GB (1) GB2599336B (https=)
WO (1) WO2021014266A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11462398B2 (en) * 2019-07-17 2022-10-04 International Business Machines Corporation Ligand selection for ternary oxide thin films
JP7451539B2 (ja) * 2019-08-30 2024-03-18 住友電気工業株式会社 熱電変換素子
US11362274B2 (en) * 2020-01-10 2022-06-14 International Business Machines Corporation Laterally switching cell having sub-stoichiometric metal oxide active layer
KR102872611B1 (ko) 2021-09-01 2025-10-17 에스케이하이닉스 주식회사 강유전층 및 금속 입자가 내장된 금속-유기물 구조체층을 포함하는 반도체 장치
KR20230043634A (ko) * 2021-09-24 2023-03-31 에스케이하이닉스 주식회사 강유전층 및 금속 입자가 내장된 절연층을 포함하는 반도체 장치
CN117265510B (zh) * 2023-11-24 2024-02-27 上海星原驰半导体有限公司 原子层沉积方法以及原子层沉积系统

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7030042B2 (en) 2002-08-28 2006-04-18 Micron Technology, Inc. Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
US20040168627A1 (en) 2003-02-27 2004-09-02 Sharp Laboratories Of America, Inc. Atomic layer deposition of oxide film
US20050070126A1 (en) * 2003-04-21 2005-03-31 Yoshihide Senzaki System and method for forming multi-component dielectric films
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
FR2857030B1 (fr) 2003-07-01 2006-10-27 Saint Gobain Procede de depot d'oxyde de titane par source plasma
US20050153571A1 (en) 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US8993055B2 (en) * 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
JP5107541B2 (ja) 2006-08-22 2012-12-26 ルネサスエレクトロニクス株式会社 絶縁膜形成方法および半導体装置の製造方法
US8016945B2 (en) 2007-12-21 2011-09-13 Applied Materials, Inc. Hafnium oxide ALD process
EP2174942B1 (en) * 2008-10-07 2011-11-30 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Niobium and vanadium organometallic precursors for thin film deposition
US8557702B2 (en) * 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
US8592294B2 (en) * 2010-02-22 2013-11-26 Asm International N.V. High temperature atomic layer deposition of dielectric oxides
US20110293830A1 (en) 2010-02-25 2011-12-01 Timo Hatanpaa Precursors and methods for atomic layer deposition of transition metal oxides
FR2972447B1 (fr) 2011-03-08 2019-06-07 Saint-Gobain Glass France Procede d'obtention d'un substrat muni d'un revetement
US9223203B2 (en) 2011-07-08 2015-12-29 Asm International N.V. Microcontact printed films as an activation layer for selective atomic layer deposition
US20140318611A1 (en) 2011-08-09 2014-10-30 Solexel, Inc. Multi-level solar cell metallization
JP2014218691A (ja) 2013-05-07 2014-11-20 エア・ウォーター株式会社 層状構造体の製造方法
US20150380309A1 (en) * 2014-06-26 2015-12-31 Intermolecular Inc. Metal-insulator-semiconductor (MIS) contact with controlled defect density
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
US10134984B1 (en) 2014-12-31 2018-11-20 Crossbar, Inc. Two-terminal memory electrode comprising a non-continuous contact surface
US10714350B2 (en) * 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
TWI758363B (zh) * 2016-12-06 2022-03-21 美商應用材料股份有限公司 用於ald及cvd薄膜沉積之釕前驅物及其用法
JP2019016778A (ja) 2017-07-07 2019-01-31 東京エレクトロン株式会社 半導体装置の製造方法及び金属酸化物膜の形成方法

Also Published As

Publication number Publication date
WO2021014266A1 (en) 2021-01-28
JP7493580B2 (ja) 2024-05-31
US20210020427A1 (en) 2021-01-21
GB202201308D0 (en) 2022-03-16
US11081343B2 (en) 2021-08-03
US11646199B2 (en) 2023-05-09
JP2022541886A (ja) 2022-09-28
CN114072537A (zh) 2022-02-18
GB2599336B (en) 2022-12-07
US20210272796A1 (en) 2021-09-02
GB2599336A (en) 2022-03-30

Similar Documents

Publication Publication Date Title
DE112020002781T5 (de) Substöchiometrische metalloxid-dünnschichten
DE112018004626B4 (de) Verfahren zur herstellung von nanoblatttransistoren
DE112020005273B4 (de) Verfahren zum Bilden eines Nanosheet-Transistors mit selbstausgerichteter dielektrischer Säule
DE102022100588B4 (de) Ferroelektrischer double-gate-feldeffekttransistor und verfahren zu dessen herstellung
DE112018006487B4 (de) Bildung eines selbstausgerichteten unteren abstandshalters für vertikale transistoren
DE69617658T2 (de) Niedrig-temperatur-verfahren zur herstellung von geschichteten supergittermaterialen
DE112020000212B4 (de) Verfahren zur herstellung eines transistorkanals mit vertikal gestapelten nanoschichten, die durch finnenförmige brückenzonen verbunden sind
DE102018113168B4 (de) Halbleitervorrichtung mit einer nicht konformen oxidauskleidung und herstellungsverfahren dafür
DE102019127079B4 (de) Tunnelkontaktselektor-MRAM und Verfahren zu dessen Herstellung
DE112016005805T5 (de) Variable gate-längen für vertikale transistoren
DE102015213529A1 (de) Vorrichtung mit einer Floating-Gate-Elektrode und einer Schicht aus ferroelektrischem Material und Verfahren zu ihrer Herstellung
DE102019116992A1 (de) Bildungs- und in-situ-ätzprozesse für metallschichten
DE102021112578A1 (de) Speicherbauelement und verfahren zum bilden davon
DE112017005474T5 (de) Vertikal-transport-fet-einheiten unter verwendung einer selektiven epitaxie bei niedriger temperatur
DE102020110789B4 (de) Gate-strukturen für halbleitervorrichtungen und verfahren zum herstellen einer halbleitervorrichtung
DE112020000190T5 (de) Fin-feldeffekttransistoren mit vertikalem transport kombiniert mit resistiven speicherstrukturen
DE102019216082A1 (de) Skalierter gate-kontakt und source/drain-kappe
DE102014118993A1 (de) Halbleitervorrichtungsstruktur und Verfahren zu ihrer Herstellung
DE102020132373B4 (de) Ferroelektrische speichervorrichtung und deren ausbildungsverfahren
DE112018002294T5 (de) Transistoren mit vertikalem transport mit gleichen gatestapeldicken
DE112018002981T5 (de) Siliziumoxynitrid-basierte kapselungsschicht für magnetische tunnelübergänge
DE102012223653A1 (de) Mosfet mit V-Nut-Source/Drain-Zone und Verfahren zur Herstellung desselben
DE3780907T2 (de) Dotierter halbleiterdurchkontakt zum kontaktieren.
DE112020003567B4 (de) Verfahren für einen back-end-of-line-kompatiblen chipintegrierten metall-isolator-metall-entkopplungskondensator
DE112015003603T5 (de) Split-Gate-Halbleitervorrichtung mit L-förmigem Gate

Legal Events

Date Code Title Description
R012 Request for examination validly filed