JP2022541886A5 - - Google Patents
Info
- Publication number
- JP2022541886A5 JP2022541886A5 JP2022502109A JP2022502109A JP2022541886A5 JP 2022541886 A5 JP2022541886 A5 JP 2022541886A5 JP 2022502109 A JP2022502109 A JP 2022502109A JP 2022502109 A JP2022502109 A JP 2022502109A JP 2022541886 A5 JP2022541886 A5 JP 2022541886A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- pulse
- precursor
- ligand
- ald cycle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/516,423 | 2019-07-19 | ||
| US16/516,423 US11081343B2 (en) | 2019-07-19 | 2019-07-19 | Sub-stoichiometric metal-oxide thin films |
| PCT/IB2020/056508 WO2021014266A1 (en) | 2019-07-19 | 2020-07-10 | Sub-stoichiometric metal-oxide thin films |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022541886A JP2022541886A (ja) | 2022-09-28 |
| JP2022541886A5 true JP2022541886A5 (enExample) | 2022-12-07 |
| JP7493580B2 JP7493580B2 (ja) | 2024-05-31 |
Family
ID=74192542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022502109A Active JP7493580B2 (ja) | 2019-07-19 | 2020-07-10 | 準化学量論的金属酸化物薄膜 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11081343B2 (enExample) |
| JP (1) | JP7493580B2 (enExample) |
| CN (1) | CN114072537A (enExample) |
| DE (1) | DE112020002781T5 (enExample) |
| GB (1) | GB2599336B (enExample) |
| WO (1) | WO2021014266A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11462398B2 (en) * | 2019-07-17 | 2022-10-04 | International Business Machines Corporation | Ligand selection for ternary oxide thin films |
| US11706985B2 (en) * | 2019-08-30 | 2023-07-18 | Sumitomo Electric Industries, Ltd. | Thermoelectric conversion element |
| US11362274B2 (en) * | 2020-01-10 | 2022-06-14 | International Business Machines Corporation | Laterally switching cell having sub-stoichiometric metal oxide active layer |
| KR102872611B1 (ko) * | 2021-09-01 | 2025-10-17 | 에스케이하이닉스 주식회사 | 강유전층 및 금속 입자가 내장된 금속-유기물 구조체층을 포함하는 반도체 장치 |
| KR20230043634A (ko) * | 2021-09-24 | 2023-03-31 | 에스케이하이닉스 주식회사 | 강유전층 및 금속 입자가 내장된 절연층을 포함하는 반도체 장치 |
| CN117265510B (zh) * | 2023-11-24 | 2024-02-27 | 上海星原驰半导体有限公司 | 原子层沉积方法以及原子层沉积系统 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7030042B2 (en) | 2002-08-28 | 2006-04-18 | Micron Technology, Inc. | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds |
| US20040168627A1 (en) | 2003-02-27 | 2004-09-02 | Sharp Laboratories Of America, Inc. | Atomic layer deposition of oxide film |
| US20050070126A1 (en) * | 2003-04-21 | 2005-03-31 | Yoshihide Senzaki | System and method for forming multi-component dielectric films |
| US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
| FR2857030B1 (fr) | 2003-07-01 | 2006-10-27 | Saint Gobain | Procede de depot d'oxyde de titane par source plasma |
| US20050153571A1 (en) | 2003-11-17 | 2005-07-14 | Yoshihide Senzaki | Nitridation of high-k dielectric films |
| US7560395B2 (en) | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
| US8993055B2 (en) * | 2005-10-27 | 2015-03-31 | Asm International N.V. | Enhanced thin film deposition |
| US7592251B2 (en) | 2005-12-08 | 2009-09-22 | Micron Technology, Inc. | Hafnium tantalum titanium oxide films |
| JP5107541B2 (ja) | 2006-08-22 | 2012-12-26 | ルネサスエレクトロニクス株式会社 | 絶縁膜形成方法および半導体装置の製造方法 |
| US8016945B2 (en) | 2007-12-21 | 2011-09-13 | Applied Materials, Inc. | Hafnium oxide ALD process |
| ATE535534T1 (de) * | 2008-10-07 | 2011-12-15 | Air Liquide | Metall-organische niobium- und vanadium-vorläufer zur dünnschichtablagerung |
| US8557702B2 (en) | 2009-02-02 | 2013-10-15 | Asm America, Inc. | Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
| US8592294B2 (en) * | 2010-02-22 | 2013-11-26 | Asm International N.V. | High temperature atomic layer deposition of dielectric oxides |
| US20110293830A1 (en) | 2010-02-25 | 2011-12-01 | Timo Hatanpaa | Precursors and methods for atomic layer deposition of transition metal oxides |
| FR2972447B1 (fr) * | 2011-03-08 | 2019-06-07 | Saint-Gobain Glass France | Procede d'obtention d'un substrat muni d'un revetement |
| US9223203B2 (en) | 2011-07-08 | 2015-12-29 | Asm International N.V. | Microcontact printed films as an activation layer for selective atomic layer deposition |
| US20140318611A1 (en) | 2011-08-09 | 2014-10-30 | Solexel, Inc. | Multi-level solar cell metallization |
| JP2014218691A (ja) | 2013-05-07 | 2014-11-20 | エア・ウォーター株式会社 | 層状構造体の製造方法 |
| US20150380309A1 (en) * | 2014-06-26 | 2015-12-31 | Intermolecular Inc. | Metal-insulator-semiconductor (MIS) contact with controlled defect density |
| US9478411B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS |
| US10134984B1 (en) | 2014-12-31 | 2018-11-20 | Crossbar, Inc. | Two-terminal memory electrode comprising a non-continuous contact surface |
| US10714350B2 (en) * | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| TWI758363B (zh) * | 2016-12-06 | 2022-03-21 | 美商應用材料股份有限公司 | 用於ald及cvd薄膜沉積之釕前驅物及其用法 |
| JP2019016778A (ja) | 2017-07-07 | 2019-01-31 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び金属酸化物膜の形成方法 |
-
2019
- 2019-07-19 US US16/516,423 patent/US11081343B2/en active Active
-
2020
- 2020-07-10 WO PCT/IB2020/056508 patent/WO2021014266A1/en not_active Ceased
- 2020-07-10 CN CN202080049144.XA patent/CN114072537A/zh active Pending
- 2020-07-10 GB GB2201308.0A patent/GB2599336B/en active Active
- 2020-07-10 JP JP2022502109A patent/JP7493580B2/ja active Active
- 2020-07-10 DE DE112020002781.3T patent/DE112020002781T5/de active Pending
-
2021
- 2021-05-18 US US17/323,178 patent/US11646199B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022541886A5 (enExample) | ||
| JP7710826B2 (ja) | Ｄｒａｍのワード線におけるゲート誘起ドレインリークを低減させること | |
| CN100590803C (zh) | 原子层沉积方法以及形成的半导体器件 | |
| GB2599336A (en) | Sub-stoichiometric metal-oxide thin films | |
| CN101271841B (zh) | 制造半导体器件的方法 | |
| JP7577449B2 (ja) | ３ｄ－ｎａｎｄデバイスでのワードライン分離のための方法 | |
| KR100615093B1 (ko) | 나노크리스탈을 갖는 비휘발성 메모리 소자의 제조방법 | |
| JP2005537645A5 (enExample) | ||
| JP2010506408A5 (enExample) | ||
| US20080054332A1 (en) | Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition | |
| JP7112631B2 (ja) | 半導体装置の製造方法 | |
| CN100590805C (zh) | 原子层沉积方法以及形成的半导体器件 | |
| JP7730924B2 (ja) | Ｄｒａｍワード線の間隙充填性能を向上させること | |
| JP2007507902A (ja) | 原子層堆積による高誘電率誘電体の成長 | |
| TWI806881B (zh) | 金屬閘極之低厚度相依功函數nMOS整合 | |
| US20150140838A1 (en) | Two Step Deposition of High-k Gate Dielectric Materials | |
| TW200910452A (en) | Methods for depositing a high-k dielectric material using chemical vapor deposition process | |
| TWI790372B (zh) | 具有用於低電容內連線之氣隙的半導體元件形成方法 | |
| JP5334400B2 (ja) | 相変化層の表面処理工程を含む相変化メモリ素子の製造方法 | |
| CN113862635A (zh) | 形成材料层的方法、半导体装置和制造半导体装置的方法 | |
| KR20230163587A (ko) | V-nand 워드라인 스택을 위한 라이너 | |
| CN109616473B (zh) | 一种三维存储器及其制备方法 | |
| KR20250051767A (ko) | Dram 몰리브데넘 라이너로서의 질화란타넘 | |
| TWI817900B (zh) | 具有複合接觸結構的半導體元件 | |
| JP2026510345A (ja) | 低次元材料を用いた半導体デバイスのコンタクト構造 |