JP2022541413A - ハイブリッド整合回路網のトポロジー - Google Patents
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- 238000000034 method Methods 0.000 claims description 22
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
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- 238000012545 processing Methods 0.000 abstract description 10
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- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
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- 238000001020 plasma etching Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/40—Automatic matching of load impedance to source impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32926—Software, data control or modelling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/28—Impedance matching networks
- H03H11/30—Automatic matching of source impedance to load impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
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- Plasma & Fusion (AREA)
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Abstract
Description
本出願は、2019年7月9日に出願された米国特許出願第16/506,373号の優先権を主張し、その内容は、参照により本明細書に組み込まれる。
Claims (20)
- インピーダンスの高速変動の間に低Qインピーダンス変換を実行するための第1段整合回路網であって、
前記高速変動は、第2段整合回路網と関連する制御ループ帯域幅を超えるインピーダンスの変化として定義される、第1段整合回路網と、
高Qインピーダンス変換に対してインピーダンス整合を実行するための第2段整合回路網と、
前記第1段整合回路網及び前記第2段整合回路網と結合しているセンサ素子であって、信号を検出し、前記第1段整合回路網及び前記第2段整合回路網と連結するために使用される計算をする、センサ素子と、
を備える、整合回路網。 - 前記第1段整合回路網は、切換式整合回路網を含み、
前記第2段整合回路網は、機械調節式整合回路網を含む、請求項1に記載の整合回路網。 - 前記第1段整合回路網は、固定コンデンサ及び電子装置の少なくとも1つを使用し、
前記スイッチは、一組のPINダイオード、SiCFET(silicon-carbide field effect transistor)、MOSFET(metal oxide field effect transistor)、IGBT(insulated gate bipolar transistor)、又はBJT(bipolar junction transistor)の少なくとも1つであってよく、
前記第2段整合回路網は、一組の真空可変コンデンサ又は空気可変コンデンサの少なくとも1つ、及び、一組のステッピングモータ、ブラシ付きDC(direct current)モータ、ブラシレスDCモータ又はACモータの少なくとも1つであってよい、請求項2に記載の整合回路網。 - 前記第1段整合回路網は、連続的に可変なリアクタンス同調素子を含む、請求項1に記載の整合回路網。
- 前記センサ素子は、電圧及び電流を測定し、両方の位相、大きさ及びインピーダンスにおいて、前記測定された電圧と電流との間の関係を計算する、請求項1に記載の整合回路網。
- 前記センサ素子は、スイッチアクチュエータを動作させて前記第1段整合回路網を連結する、請求項1に記載の整合回路網。
- 前記インピーダンス変成器は、集中素子、π回路網を含む、請求項1に記載の整合回路網。
- 前記スイッチ端子の前半は、前記π回路網の第1側に配置され、
前記スイッチ端子の後半は、前記π回路網の第2側に配置される、請求項7に記載の整合回路網。 - 前記第1段整合回路網の調節可能範囲は、前記スイッチ端子の少なくとも1つを無効にすることによって変更され得る、請求項1に記載の整合回路網。
- 前記第1段整合回路網及び前記第2段整合回路網は、変調されたRF波形の同一の又は異なる部分でインピーダンス整合を実行する、請求項1に記載の整合回路網。
- 高周波発生器と、
前記高周波発生器と結合し、インピーダンス整合した出力を発生させる整合回路網であって、
インピーダンスの高速変動の間に低Qインピーダンス変換を実行するための第1段整合回路網であって、
前記高速変動は、第2段整合回路網と関連する制御ループ帯域幅を超えるインピーダンスの変化として定義される、第1段整合回路網と、
高Qインピーダンス変換に対してインピーダンス整合を実行するための第2段整合回路網であって、
前記高Qインピーダンス変換は、2より大きなQ値を有し、
前記低Qインピーダンス変換は、2より小さなQ値を有する、第2段整合回路網と、
前記第1段整合回路網及び前記第2段整合回路網と結合しているセンサ素子であって、信号を検出し、前記第1段整合回路網及び前記第2段整合回路網と連結するために使用される計算をする、センサ素子と、を備える、整合回路網と、
前記整合回路網と結合して、前記整合回路網からインピーダンス整合した出力を受信するプラズマチャンバーと、
を備える、プラズマ発生システム。 - 前記高周波発生器は、変調されたRF波形を発生し、
前記第1段整合回路網は、前記変調されたRF波形のそれぞれの状態を連結し、前記第2段整合回路網は、変調されたRF波形の単一の状態上で連結することができる、請求項11に記載のプラズマ発生システム。 - 前記センサ素子は、プラズマチャンバーインピーダンスの高速変動を検出し、前記高速変動によって引き起こされるインピーダンスの変化を使用して前記第1段整合回路網を連結する、請求項11に記載のプラズマ発生システム。
- 前記第1段整合回路網は、複数のRFスイッチを含む、請求項11に記載のプラズマ発生システム。
- 第1の規定の閾値を超えるRF波の存在を決定することと、
電圧及び電流の大きさ及び位相の関係を計算して、ハイブリッド整合回路網の第2段整合回路網の調節を指示し、前記計算された前記電圧及び電流の大きさ及び位相の関係からインピーダンスを計算して、前記ハイブリッド整合回路網の第1段整合回路網の前記調節を指示することと、を含む、方法。 - 前記第1段整合回路網及び前記第2段整合回路網と関連する、並行制御ループの同時実行を可能にすることをさらに含み、それは、最短システム調節時間を達成するように前記ハイブリッド整合回路網の前記第1段整合回路網及び前記第2段整合回路網を指示する、請求項15に記載の方法。
- 前記第1段整合回路網が開放されるとき、前記第1段整合回路網は、フィルタとして機能する、請求項15に記載の方法。
- 前記第1段整合回路網を連結することは、複数のスイッチ端子の状態を、前記第1段整合回路網内に設定することを含む、請求項15に記載の方法。
- 前記第1段整合回路網は、前記第2段整合回路網への入力インピーダンスが前記第1段整合回路網の調節可能範囲に入るときに連結される、請求項15に記載の方法。
- 前記第1段整合回路網及び前記第2段整合回路網の動作は、独立して、同時に又は順次に起こる、請求項15に記載の方法。
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10431428B2 (en) * | 2014-01-10 | 2019-10-01 | Reno Technologies, Inc. | System for providing variable capacitance |
US11476091B2 (en) | 2017-07-10 | 2022-10-18 | Reno Technologies, Inc. | Impedance matching network for diagnosing plasma chamber |
US11521833B2 (en) | 2017-07-10 | 2022-12-06 | Reno Technologies, Inc. | Combined RF generator and RF solid-state matching network |
US11114279B2 (en) * | 2019-06-28 | 2021-09-07 | COMET Technologies USA, Inc. | Arc suppression device for plasma processing equipment |
US11596309B2 (en) * | 2019-07-09 | 2023-03-07 | COMET Technologies USA, Inc. | Hybrid matching network topology |
CN113541614B (zh) * | 2021-08-12 | 2024-01-30 | 南京汇君半导体科技有限公司 | 一种功率放大模块及终端设备 |
US20230317413A1 (en) * | 2022-04-04 | 2023-10-05 | COMET Technologies USA, Inc. | Variable reactance device having isolated gate drive power supplies |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001274651A (ja) * | 2000-03-27 | 2001-10-05 | Japan Radio Co Ltd | インピーダンス整合装置、インピーダンス整合用コンダクタンス検出回路、およびインピーダンス整合方法 |
WO2017204889A1 (en) * | 2016-05-24 | 2017-11-30 | Mks Instruments, Inc. | Solid-state impedance matching systems including a hybrid tuning network with a switchable coarse tuning network and a varactor fine tuning network |
JP2018504864A (ja) * | 2015-01-06 | 2018-02-15 | 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. | パルス高周波電源のインピーダンス整合方法および装置 |
JP2019509707A (ja) * | 2016-02-02 | 2019-04-04 | ワイトリシティ コーポレーションWitricity Corporation | ワイヤレス電力伝送システムの制御 |
Family Cites Families (187)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4679007A (en) | 1985-05-20 | 1987-07-07 | Advanced Energy, Inc. | Matching circuit for delivering radio frequency electromagnetic energy to a variable impedance load |
JP3007435B2 (ja) | 1991-01-11 | 2000-02-07 | 新電元工業株式会社 | Rf発生装置のマッチング制御回路 |
JPH05284046A (ja) | 1991-01-29 | 1993-10-29 | Shindengen Electric Mfg Co Ltd | Rf発生装置のインピーダンスマッチング制御回路 |
US5195045A (en) | 1991-02-27 | 1993-03-16 | Astec America, Inc. | Automatic impedance matching apparatus and method |
US5849136A (en) | 1991-10-11 | 1998-12-15 | Applied Materials, Inc. | High frequency semiconductor wafer processing apparatus and method |
US5175472A (en) | 1991-12-30 | 1992-12-29 | Comdel, Inc. | Power monitor of RF plasma |
JPH0732078B2 (ja) | 1993-01-14 | 1995-04-10 | 株式会社アドテック | 高周波プラズマ用電源及びインピーダンス整合装置 |
JP2642849B2 (ja) | 1993-08-24 | 1997-08-20 | 株式会社フロンテック | 薄膜の製造方法および製造装置 |
TW293983B (ja) | 1993-12-17 | 1996-12-21 | Tokyo Electron Co Ltd | |
US5474648A (en) | 1994-07-29 | 1995-12-12 | Lsi Logic Corporation | Uniform and repeatable plasma processing |
US5576629A (en) | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
US5629653A (en) | 1995-07-07 | 1997-05-13 | Applied Materials, Inc. | RF match detector circuit with dual directional coupler |
US5907221A (en) | 1995-08-16 | 1999-05-25 | Applied Materials, Inc. | Inductively coupled plasma reactor with an inductive coil antenna having independent loops |
US5810963A (en) | 1995-09-28 | 1998-09-22 | Kabushiki Kaisha Toshiba | Plasma processing apparatus and method |
US6252354B1 (en) | 1996-11-04 | 2001-06-26 | Applied Materials, Inc. | RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control |
US5737175A (en) | 1996-06-19 | 1998-04-07 | Lam Research Corporation | Bias-tracking D.C. power circuit for an electrostatic chuck |
US5889252A (en) | 1996-12-19 | 1999-03-30 | Lam Research Corporation | Method of and apparatus for independently controlling electric parameters of an impedance matching network |
US5914974A (en) | 1997-02-21 | 1999-06-22 | Cymer, Inc. | Method and apparatus for eliminating reflected energy due to stage mismatch in nonlinear magnetic compression modules |
US5866869A (en) | 1997-02-24 | 1999-02-02 | Illinois Tool Works Inc. | Plasma pilot arc control |
EP0934623B1 (en) | 1997-06-13 | 2007-01-24 | Koninklijke Philips Electronics N.V. | A switched-mode power supply |
US5842154A (en) | 1997-09-15 | 1998-11-24 | Eni Technologies, Inc. | Fuzzy logic tuning of RF matching network |
US5910886A (en) | 1997-11-07 | 1999-06-08 | Sierra Applied Sciences, Inc. | Phase-shift power supply |
US6313587B1 (en) | 1998-01-13 | 2001-11-06 | Fusion Lighting, Inc. | High frequency inductive lamp and power oscillator |
US6164241A (en) | 1998-06-30 | 2000-12-26 | Lam Research Corporation | Multiple coil antenna for inductively-coupled plasma generation systems |
US6313584B1 (en) | 1998-09-17 | 2001-11-06 | Tokyo Electron Limited | Electrical impedance matching system and method |
US6326597B1 (en) | 1999-04-15 | 2001-12-04 | Applied Materials, Inc. | Temperature control system for process chamber |
US7215697B2 (en) | 1999-08-27 | 2007-05-08 | Hill Alan E | Matched impedance controlled avalanche driver |
JP3626047B2 (ja) | 1999-10-05 | 2005-03-02 | 株式会社ケンウッド | 同期捕捉回路及び同期捕捉方法 |
US6407648B1 (en) | 1999-11-15 | 2002-06-18 | Werlatone, Inc. | Four-way non-directional power combiner |
US20110121735A1 (en) | 2000-02-22 | 2011-05-26 | Kreos Capital Iii (Uk) Limited | Tissue resurfacing |
US7220937B2 (en) | 2000-03-17 | 2007-05-22 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination |
US7030335B2 (en) | 2000-03-17 | 2006-04-18 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
US6894245B2 (en) | 2000-03-17 | 2005-05-17 | Applied Materials, Inc. | Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
US7196283B2 (en) | 2000-03-17 | 2007-03-27 | Applied Materials, Inc. | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface |
US6507155B1 (en) | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
US8744384B2 (en) | 2000-07-20 | 2014-06-03 | Blackberry Limited | Tunable microwave devices with auto-adjusting matching circuit |
US6677828B1 (en) | 2000-08-17 | 2004-01-13 | Eni Technology, Inc. | Method of hot switching a plasma tuner |
US6920312B1 (en) * | 2001-05-31 | 2005-07-19 | Lam Research Corporation | RF generating system with fast loop control |
US7132996B2 (en) * | 2001-10-09 | 2006-11-07 | Plasma Control Systems Llc | Plasma production device and method and RF driver circuit |
TW200300951A (en) | 2001-12-10 | 2003-06-16 | Tokyo Electron Ltd | Method and device for removing harmonics in semiconductor plasma processing systems |
US7480571B2 (en) | 2002-03-08 | 2009-01-20 | Lam Research Corporation | Apparatus and methods for improving the stability of RF power delivery to a plasma load |
US7247221B2 (en) | 2002-05-17 | 2007-07-24 | Applied Films Corporation | System and apparatus for control of sputter deposition process |
US6703080B2 (en) | 2002-05-20 | 2004-03-09 | Eni Technology, Inc. | Method and apparatus for VHF plasma processing with load mismatch reliability and stability |
US6819052B2 (en) | 2002-05-31 | 2004-11-16 | Nagano Japan Radio Co., Ltd. | Coaxial type impedance matching device and impedance detecting method for plasma generation |
US6830650B2 (en) | 2002-07-12 | 2004-12-14 | Advanced Energy Industries, Inc. | Wafer probe for measuring plasma and surface characteristics in plasma processing environments |
KR100486712B1 (ko) | 2002-09-04 | 2005-05-03 | 삼성전자주식회사 | 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치 |
US6876155B2 (en) | 2002-12-31 | 2005-04-05 | Lam Research Corporation | Plasma processor apparatus and method, and antenna |
US7244343B2 (en) | 2003-08-28 | 2007-07-17 | Origin Electric Company Limited | Sputtering apparatus |
US7042311B1 (en) | 2003-10-10 | 2006-05-09 | Novellus Systems, Inc. | RF delivery configuration in a plasma processing system |
WO2005057993A1 (ja) | 2003-11-27 | 2005-06-23 | Daihen Corporation | 高周波電力供給システム |
US7307475B2 (en) | 2004-05-28 | 2007-12-11 | Ixys Corporation | RF generator with voltage regulator |
US7276135B2 (en) * | 2004-05-28 | 2007-10-02 | Lam Research Corporation | Vacuum plasma processor including control in response to DC bias voltage |
JP4099597B2 (ja) | 2004-05-31 | 2008-06-11 | ソニー株式会社 | スイッチング電源回路 |
US7292045B2 (en) | 2004-09-04 | 2007-11-06 | Applied Materials, Inc. | Detection and suppression of electrical arcing |
EP1812949B1 (en) * | 2004-11-12 | 2010-07-07 | Oerlikon Trading AG, Trübbach | Impedance matching of a capacitively coupled rf plasma reactor suitable for large area substrates |
US10374505B2 (en) | 2004-12-16 | 2019-08-06 | John Wood | Power coupler |
JP2008527378A (ja) | 2005-01-11 | 2008-07-24 | イノベーション エンジニアリング、エルエルシー | 負荷に供給されたrf電力およびその負荷の複素インピーダンスを検出する方法 |
US20060172536A1 (en) | 2005-02-03 | 2006-08-03 | Brown Karl M | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece |
KR20070108229A (ko) | 2005-03-05 | 2007-11-08 | 이노베이션 엔지니어링, 엘엘씨 | 전자적 가변 커패시터 어레이 |
US7602127B2 (en) * | 2005-04-18 | 2009-10-13 | Mks Instruments, Inc. | Phase and frequency control of a radio frequency generator from an external source |
WO2006113850A1 (en) | 2005-04-19 | 2006-10-26 | Knite, Inc. | Method and apparatus for operating traveling spark igniter at high pressure |
JP5367369B2 (ja) | 2005-08-26 | 2013-12-11 | フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. | 放電プラズマを発生させ制御するための方法、装置および該装置の使用方法 |
US20080179948A1 (en) | 2005-10-31 | 2008-07-31 | Mks Instruments, Inc. | Radio frequency power delivery system |
TWI425767B (zh) * | 2005-10-31 | 2014-02-01 | Mks Instr Inc | 無線電頻率電力傳送系統 |
US9011633B2 (en) * | 2005-11-17 | 2015-04-21 | Mks Instruments, Inc. | Broadband techniques to reduce the effects of impedance mismatch in plasma chambers |
US20080061901A1 (en) | 2006-09-13 | 2008-03-13 | Jack Arthur Gilmore | Apparatus and Method for Switching Between Matching Impedances |
US7795877B2 (en) | 2006-11-02 | 2010-09-14 | Current Technologies, Llc | Power line communication and power distribution parameter measurement system and method |
DE112007003667A5 (de) | 2007-07-23 | 2010-07-01 | Hüttinger Elektronik GmbH & Co. KG | Plasmaversorgungseinrichtung |
JP5454944B2 (ja) | 2008-03-26 | 2014-03-26 | 株式会社京三製作所 | 真空装置用異常放電抑制装置 |
US8008960B2 (en) | 2008-04-22 | 2011-08-30 | Cisco Technology, Inc. | Synchronous rectifier post regulator |
US8391025B2 (en) | 2008-05-02 | 2013-03-05 | Advanced Energy Industries, Inc. | Preemptive protection for a power convertor |
WO2009146432A1 (en) * | 2008-05-30 | 2009-12-03 | Colorado State University Research Foundation | Plasma-based chemical source device and method of use thereof |
EP2299922B1 (en) * | 2008-05-30 | 2016-11-09 | Colorado State University Research Foundation | Apparatus for generating plasma |
US9017533B2 (en) | 2008-07-15 | 2015-04-28 | Applied Materials, Inc. | Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning |
US8734664B2 (en) * | 2008-07-23 | 2014-05-27 | Applied Materials, Inc. | Method of differential counter electrode tuning in an RF plasma reactor |
US9515494B2 (en) | 2008-09-27 | 2016-12-06 | Witricity Corporation | Wireless power system including impedance matching network |
US8070925B2 (en) | 2008-10-17 | 2011-12-06 | Applied Materials, Inc. | Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target |
KR20110074912A (ko) | 2008-10-21 | 2011-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 챔버 세정을 위한 플라즈마 소오스 및 챔버 세정 방법 |
US8395078B2 (en) | 2008-12-05 | 2013-03-12 | Advanced Energy Industries, Inc | Arc recovery with over-voltage protection for plasma-chamber power supplies |
GB0823565D0 (en) * | 2008-12-24 | 2009-01-28 | Oxford Instr Plasma Technology | Signal generating system |
CA2750855C (en) | 2009-01-26 | 2014-06-17 | Bsn Medical, Inc. | Water resistant bandage |
US8319436B2 (en) | 2009-02-02 | 2012-11-27 | Advanced Energy Industries, Inc. | Passive power distribution for multiple electrode inductive plasma source |
JP5657262B2 (ja) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
US11615941B2 (en) * | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
US9305750B2 (en) | 2009-06-12 | 2016-04-05 | Lam Research Corporation | Adjusting current ratios in inductively coupled plasma processing systems |
US8716984B2 (en) | 2009-06-29 | 2014-05-06 | Advanced Energy Industries, Inc. | Method and apparatus for modifying the sensitivity of an electrical generator to a nonlinear load |
US8222822B2 (en) | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
US8330432B2 (en) | 2009-12-22 | 2012-12-11 | Advanced Energy Industries, Inc | Efficient active source impedance modification of a power amplifier |
JP5631088B2 (ja) | 2010-07-15 | 2014-11-26 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理方法 |
US8491759B2 (en) | 2010-10-20 | 2013-07-23 | COMET Technologies USA, Inc. | RF impedance matching network with secondary frequency and sub-harmonic variant |
US8803424B2 (en) | 2010-10-20 | 2014-08-12 | COMET Technologies USA, Inc. | RF/VHF impedance matching, 4 quadrant, dual directional coupler with V RMS/IRMS responding detector circuitry |
US8779662B2 (en) | 2010-10-20 | 2014-07-15 | Comet Technologies Usa, Inc | Pulse mode capability for operation of an RF/VHF impedance matching network with 4 quadrant, VRMS/IRMS responding detector circuitry |
US20120097104A1 (en) | 2010-10-20 | 2012-04-26 | COMET Technologies USA, Inc. | Rf impedance matching network with secondary dc input |
US9065426B2 (en) | 2011-11-03 | 2015-06-23 | Advanced Energy Industries, Inc. | High frequency solid state switching for impedance matching |
JP5578619B2 (ja) | 2010-12-10 | 2014-08-27 | パナソニック インテレクチュアル プロパティ コーポレーション オブ アメリカ | 送信装置および受信装置 |
JP5711953B2 (ja) | 2010-12-13 | 2015-05-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
WO2012094416A1 (en) | 2011-01-04 | 2012-07-12 | Advanced Energy Industries, Inc. | System level power delivery to a plasma processing load |
US8416008B2 (en) | 2011-01-20 | 2013-04-09 | Advanced Energy Industries, Inc. | Impedance-matching network using BJT switches in variable-reactance circuits |
US8723423B2 (en) | 2011-01-25 | 2014-05-13 | Advanced Energy Industries, Inc. | Electrostatic remote plasma source |
US9263241B2 (en) | 2011-05-10 | 2016-02-16 | Advanced Energy Industries, Inc. | Current threshold response mode for arc management |
US8471746B2 (en) | 2011-07-08 | 2013-06-25 | Tektronix, Inc. | Digital-to-analog conversion with combined pulse modulators |
US9171699B2 (en) | 2012-02-22 | 2015-10-27 | Lam Research Corporation | Impedance-based adjustment of power and frequency |
US8932429B2 (en) | 2012-02-23 | 2015-01-13 | Lam Research Corporation | Electronic knob for tuning radial etch non-uniformity at VHF frequencies |
US9161428B2 (en) * | 2012-04-26 | 2015-10-13 | Applied Materials, Inc. | Independent control of RF phases of separate coils of an inductively coupled plasma reactor |
US9171700B2 (en) | 2012-06-15 | 2015-10-27 | COMET Technologies USA, Inc. | Plasma pulse tracking system and method |
JP5534366B2 (ja) | 2012-06-18 | 2014-06-25 | 株式会社京三製作所 | 高周波電力供給装置、及びイグニッション電圧選定方法 |
US9685297B2 (en) * | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
JP6247300B2 (ja) | 2012-08-28 | 2017-12-13 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッドAdvanced Energy Industries, Inc. | 3端子pinダイオード |
US9105447B2 (en) | 2012-08-28 | 2015-08-11 | Advanced Energy Industries, Inc. | Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel |
PL3890448T3 (pl) | 2012-08-31 | 2023-10-16 | Aes Global Holdings, Pte. Ltd. | Zarządzanie łukiem z odwracaniem napięcia i ulepszonym powrotem do pracy |
US9082589B2 (en) | 2012-10-09 | 2015-07-14 | Novellus Systems, Inc. | Hybrid impedance matching for inductively coupled plasma system |
US9287098B2 (en) | 2012-11-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Charge removal from electrodes in unipolar sputtering system |
US9129776B2 (en) | 2012-11-01 | 2015-09-08 | Advanced Energy Industries, Inc. | Differing boost voltages applied to two or more anodeless electrodes for plasma processing |
US9226380B2 (en) | 2012-11-01 | 2015-12-29 | Advanced Energy Industries, Inc. | Adjustable non-dissipative voltage boosting snubber network |
US9294100B2 (en) | 2012-12-04 | 2016-03-22 | Advanced Energy Industries, Inc. | Frequency tuning system and method for finding a global optimum |
US10374070B2 (en) | 2013-02-07 | 2019-08-06 | John Wood | Bidirectional bipolar-mode JFET driver circuitry |
JP2014154421A (ja) | 2013-02-12 | 2014-08-25 | Tokyo Electron Ltd | プラズマ処理装置、プラズマ処理方法、および高周波発生器 |
US9536713B2 (en) | 2013-02-27 | 2017-01-03 | Advanced Energy Industries, Inc. | Reliable plasma ignition and reignition |
JP5529311B1 (ja) | 2013-03-04 | 2014-06-25 | 株式会社コスモライフ | ウォーターサーバー |
US9166481B1 (en) | 2013-03-14 | 2015-10-20 | Vlt, Inc. | Digital control of resonant power converters |
JP6217096B2 (ja) | 2013-03-14 | 2017-10-25 | 株式会社リコー | 高電圧インバータ及び誘電体バリア放電発生装置とシート材改質装置 |
US10469108B2 (en) | 2013-05-09 | 2019-11-05 | Lam Research Corporation | Systems and methods for using computer-generated models to reduce reflected power towards a high frequency RF generator during a cycle of operations of a low frequency RF generator |
US20140367043A1 (en) | 2013-06-17 | 2014-12-18 | Applied Materials, Inc. | Method for fast and repeatable plasma ignition and tuning in plasma chambers |
WO2015009864A1 (en) | 2013-07-17 | 2015-01-22 | Advanced Energy Industries, Inc. | System and method for balancing consumption of targets in pulsed dual magnetron sputtering (dms) processes |
US9589767B2 (en) | 2013-07-19 | 2017-03-07 | Advanced Energy Industries, Inc. | Systems, methods, and apparatus for minimizing cross coupled wafer surface potentials |
JP6161482B2 (ja) | 2013-09-19 | 2017-07-12 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
WO2015061349A1 (en) | 2013-10-22 | 2015-04-30 | Advanced Energy Industries, Inc. | Photovoltaic dc sub-array control system and method |
AU2014340176B2 (en) * | 2013-10-23 | 2019-11-07 | Perkinelmer U.S. Llc | Hybrid generators and methods of using them |
US9865432B1 (en) | 2014-01-10 | 2018-01-09 | Reno Technologies, Inc. | RF impedance matching network |
US9745660B2 (en) | 2014-05-02 | 2017-08-29 | Reno Technologies, Inc. | Method for controlling a plasma chamber |
US9196459B2 (en) | 2014-01-10 | 2015-11-24 | Reno Technologies, Inc. | RF impedance matching network |
US9844127B2 (en) | 2014-01-10 | 2017-12-12 | Reno Technologies, Inc. | High voltage switching circuit |
US9345122B2 (en) | 2014-05-02 | 2016-05-17 | Reno Technologies, Inc. | Method for controlling an RF generator |
US9496122B1 (en) | 2014-01-10 | 2016-11-15 | Reno Technologies, Inc. | Electronically variable capacitor and RF matching network incorporating same |
US9728378B2 (en) | 2014-05-02 | 2017-08-08 | Reno Technologies, Inc. | Method for controlling an RF generator |
US9755641B1 (en) | 2014-01-10 | 2017-09-05 | Reno Technologies, Inc. | High speed high voltage switching circuit |
US9299537B2 (en) * | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299538B2 (en) * | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US10224184B2 (en) | 2014-03-24 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | System and method for control of high efficiency generator source impedance |
JP6586424B2 (ja) | 2014-03-24 | 2019-10-02 | エーイーエス グローバル ホールディングス, プライベート リミテッド | 高周波発生器ソースインピーダンスの制御のためのシステムおよび方法 |
US9591739B2 (en) | 2014-05-02 | 2017-03-07 | Reno Technologies, Inc. | Multi-stage heterodyne control circuit |
US9952297B2 (en) | 2014-05-08 | 2018-04-24 | Auburn University | Parallel plate transmission line for broadband nuclear magnetic resonance imaging |
US9544987B2 (en) | 2014-06-30 | 2017-01-10 | Advanced Energy Industries, Inc. | Frequency tuning for pulsed radio frequency plasma processing |
US9741543B2 (en) * | 2014-07-21 | 2017-08-22 | Lam Research Corporation | Multi-range voltage sensor and method for a voltage controlled interface of a plasma processing system |
US9386680B2 (en) | 2014-09-25 | 2016-07-05 | Applied Materials, Inc. | Detecting plasma arcs by monitoring RF reflected power in a plasma processing chamber |
US9854659B2 (en) | 2014-10-16 | 2017-12-26 | Advanced Energy Industries, Inc. | Noise based frequency tuning and identification of plasma characteristics |
US10139285B2 (en) | 2014-12-23 | 2018-11-27 | Advanced Energy Industries, Inc. | Fully-differential amplification for pyrometry |
US9525412B2 (en) | 2015-02-18 | 2016-12-20 | Reno Technologies, Inc. | Switching circuit |
US10340879B2 (en) | 2015-02-18 | 2019-07-02 | Reno Technologies, Inc. | Switching circuit |
US10679823B2 (en) | 2015-02-18 | 2020-06-09 | Reno Technologies, Inc. | Switching circuit |
US9729122B2 (en) | 2015-02-18 | 2017-08-08 | Reno Technologies, Inc. | Switching circuit |
US9306533B1 (en) | 2015-02-20 | 2016-04-05 | Reno Technologies, Inc. | RF impedance matching network |
WO2016149050A1 (en) | 2015-03-13 | 2016-09-22 | Advanced Energy Industries, Inc. | Plasma source device and methods |
US9812305B2 (en) | 2015-04-27 | 2017-11-07 | Advanced Energy Industries, Inc. | Rate enhanced pulsed DC sputtering system |
US11342160B2 (en) * | 2015-06-29 | 2022-05-24 | Reno Technologies, Inc. | Filter for impedance matching |
US11335540B2 (en) * | 2015-06-29 | 2022-05-17 | Reno Technologies, Inc. | Impedance matching network and method |
US20180076788A1 (en) * | 2015-06-29 | 2018-03-15 | Reno Technologies, Inc. | Impedance matching network using heat pipe inductor |
US11081316B2 (en) * | 2015-06-29 | 2021-08-03 | Reno Technologies, Inc. | Impedance matching network and method |
US11150283B2 (en) * | 2015-06-29 | 2021-10-19 | Reno Technologies, Inc. | Amplitude and phase detection circuit |
US10984986B2 (en) * | 2015-06-29 | 2021-04-20 | Reno Technologies, Inc. | Impedance matching network and method |
US11342161B2 (en) * | 2015-06-29 | 2022-05-24 | Reno Technologies, Inc. | Switching circuit with voltage bias |
US10373811B2 (en) | 2015-07-24 | 2019-08-06 | Aes Global Holdings, Pte. Ltd | Systems and methods for single magnetron sputtering |
WO2017070009A1 (en) | 2015-10-22 | 2017-04-27 | Witricity Corporation | Dynamic tuning in wireless energy transfer systems |
US10008317B2 (en) | 2015-12-08 | 2018-06-26 | Smart Wires Inc. | Voltage or impedance-injection method using transformers with multiple secondary windings for dynamic power flow control |
US9577516B1 (en) | 2016-02-18 | 2017-02-21 | Advanced Energy Industries, Inc. | Apparatus for controlled overshoot in a RF generator |
US9748076B1 (en) | 2016-04-20 | 2017-08-29 | Advanced Energy Industries, Inc. | Apparatus for frequency tuning in a RF generator |
JP6630630B2 (ja) | 2016-05-18 | 2020-01-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9807863B1 (en) | 2016-06-09 | 2017-10-31 | Advanced Energy Industries, Inc. | Switching amplifier |
US10903047B2 (en) * | 2018-07-27 | 2021-01-26 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
US10026592B2 (en) | 2016-07-01 | 2018-07-17 | Lam Research Corporation | Systems and methods for tailoring ion energy distribution function by odd harmonic mixing |
DE112017003582T5 (de) | 2016-07-15 | 2019-05-02 | Mitsubishi Electric Corporation | Resonanzwechselrichter |
US10263577B2 (en) | 2016-12-09 | 2019-04-16 | Advanced Energy Industries, Inc. | Gate drive circuit and method of operating the same |
US9805919B1 (en) * | 2017-01-13 | 2017-10-31 | Lam Research Corporation | RF detector with double balanced linear mixer and corresponding method of operation |
US10431429B2 (en) * | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10410836B2 (en) * | 2017-02-22 | 2019-09-10 | Lam Research Corporation | Systems and methods for tuning to reduce reflected power in multiple states |
US10109462B2 (en) | 2017-03-13 | 2018-10-23 | Applied Materials, Inc. | Dual radio-frequency tuner for process control of a plasma process |
US10122336B1 (en) * | 2017-09-20 | 2018-11-06 | Cree, Inc. | Broadband harmonic matching network |
WO2019067451A1 (en) | 2017-09-26 | 2019-04-04 | Advanced Energy Industries, Inc. | SYSTEM AND METHOD FOR IGNITION OF PLASMA |
US10020752B1 (en) | 2017-09-26 | 2018-07-10 | Vlt, Inc. | Adaptive control of resonant power converters |
KR102424953B1 (ko) | 2017-11-17 | 2022-07-25 | 에바텍 아크티엔게젤샤프트 | 진공 플라즈마 공정에의 rf 전력 공급 |
US10510512B2 (en) * | 2018-01-25 | 2019-12-17 | Tokyo Electron Limited | Methods and systems for controlling plasma performance |
US10269540B1 (en) | 2018-01-25 | 2019-04-23 | Advanced Energy Industries, Inc. | Impedance matching system and method of operating the same |
US10447174B1 (en) | 2018-11-14 | 2019-10-15 | Advanced Energy Industries, Inc. | Additive synthesis of interleaved switch mode power stages for minimal delay in set point tracking |
JP7211806B2 (ja) * | 2018-12-26 | 2023-01-24 | 株式会社ダイヘン | インピーダンス整合装置及びインピーダンス整合方法 |
JP7112952B2 (ja) * | 2018-12-26 | 2022-08-04 | 株式会社ダイヘン | インピーダンス整合装置及びインピーダンス整合方法 |
-
2019
- 2019-07-09 US US16/506,373 patent/US11107661B2/en active Active
-
2020
- 2020-06-22 KR KR1020217043413A patent/KR20220030959A/ko unknown
- 2020-06-22 CN CN202080042438.XA patent/CN114008919A/zh active Pending
- 2020-06-22 JP JP2022501172A patent/JP7479446B2/ja active Active
- 2020-06-22 WO PCT/US2020/038899 patent/WO2021007017A1/en unknown
- 2020-06-22 EP EP20836781.3A patent/EP3997789A4/en active Pending
-
2023
- 2023-06-20 JP JP2023100754A patent/JP2023115113A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001274651A (ja) * | 2000-03-27 | 2001-10-05 | Japan Radio Co Ltd | インピーダンス整合装置、インピーダンス整合用コンダクタンス検出回路、およびインピーダンス整合方法 |
JP2018504864A (ja) * | 2015-01-06 | 2018-02-15 | 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. | パルス高周波電源のインピーダンス整合方法および装置 |
JP2019509707A (ja) * | 2016-02-02 | 2019-04-04 | ワイトリシティ コーポレーションWitricity Corporation | ワイヤレス電力伝送システムの制御 |
WO2017204889A1 (en) * | 2016-05-24 | 2017-11-30 | Mks Instruments, Inc. | Solid-state impedance matching systems including a hybrid tuning network with a switchable coarse tuning network and a varactor fine tuning network |
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EP3997789A4 (en) | 2023-08-30 |
EP3997789A1 (en) | 2022-05-18 |
JP2023115113A (ja) | 2023-08-18 |
KR20220030959A (ko) | 2022-03-11 |
US11107661B2 (en) | 2021-08-31 |
CN114008919A (zh) | 2022-02-01 |
US20210013009A1 (en) | 2021-01-14 |
JP7479446B2 (ja) | 2024-05-08 |
WO2021007017A1 (en) | 2021-01-14 |
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