JP2022525654A - Iii族窒化物デバイスのための集積設計 - Google Patents
Iii族窒化物デバイスのための集積設計 Download PDFInfo
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- JP2022525654A JP2022525654A JP2021556408A JP2021556408A JP2022525654A JP 2022525654 A JP2022525654 A JP 2022525654A JP 2021556408 A JP2021556408 A JP 2021556408A JP 2021556408 A JP2021556408 A JP 2021556408A JP 2022525654 A JP2022525654 A JP 2022525654A
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Abstract
Description
本願は、2019年3月21に出願された米国仮出願第62/821946号明細書の優先権を主張する。
現在、典型的なパワー半導体(トランジスタ、ダイオード、パワーMOSFET、絶縁ゲートバイポーラトランジスタ(IGBT)等のデバイスを含む)は、ケイ素(Si)半導体材料で製造される。より最近では、ワイドバンドギャップ材料(SiC、III-N、III-O、ダイアモンド)が、それらのより優れた特性によりパワーデバイスについて検討されている。III族窒化物またはIII-N半導体デバイス(窒化ガリウム(GaN)デバイス等)は、大電流を搬送し、高電圧をサポートし、高速なスイッチング時間で超低オン抵抗を提供するための魅力的な候補として出現しつつある。
本明細書には、III-Nデバイスのための集積設計が記載される。これについて、低電圧エンハンスメントモードデバイスと、高電圧デプリーションモードIII-Nデバイスとが、単一の電子コンポーネントパッケージに集積され、ハイブリッドデバイスを形成する。これは、単一の高電圧EモードIII-Nトランジスタと同じ方法で動作でき、かつ/または、同じ出力特性を有する。用語「デバイス」は、一般的に、任意のトランジスタまたはスイッチまたはダイオードについて、それらを区別する必要がない場合に用いられる。
本明細書には、単一の電子コンポーネントパッケージ内に組み立てられたデプリーションモードトランジスタおよびエンハンスメントモードトランジスタを含む、ハイブリッドエンハンスメントモード電子コンポーネントが記載される。デプリーションモードトランジスタ(高電圧III-Nデバイスであってもよい)およびエンハンスメントモードトランジスタ(低電圧ケイ素FETデバイスであってもよい)は、カスケード回路構成に配列されてハイブリッドデバイスを形成し、これは、単一の高電圧EモードIII-Nトランジスタと同じ方法で動作することができ、多くの場合において、単一の高電圧EモードIII-Nトランジスタと同一のまたは同様の出力特性を達成できる。デプリーションモードトランジスタは、エンハンスメントモードトランジスタより大きい降伏電圧を有する(たとえば少なくとも3倍大きい)。これらのハイブリッド電子コンポーネントがオフ状態にバイアスされている場合にブロック可能な最大電圧は、少なくとも、デプリーションモードトランジスタの最大ブロック電圧または降伏電圧と同じ大きさである。本明細書に記載されるハイブリッド電子コンポーネントは、従来のパッケージ内のハイブリッドデバイスに比べ、複雑さおよび組み立て工程のコストを低減させながら、信頼性および/または性能が改善されるよう構成される。
Claims (33)
- 半導体デバイスであって、
III-Nデバイスであって、III-N材料構造の第1側上に導電性基板を備え、前記III-N材料構造の、前記基板と反対側上に、第1ゲート、第1ソースおよび第1ドレインを備える、III-Nデバイスと、
第2半導体材料構造、第2ゲート、第2ソースおよび第2ドレインを備える電界効果トランジスタ(FET)であって、前記第2ソースは、前記第2半導体材料構造の、前記第2ドレインと反対側上にある、電界効果トランジスタ(FET)と、
を備え、
前記FETの前記第2ドレインは、前記III-Nデバイスの前記第1ソースと直接的に接触して電気的に接続され、
前記III-N材料構造はビアホールを備え、前記ビアホールは、前記III-N材料構造の一部を通って形成され、前記基板の上面の一部を露出させ、
前記第1ゲートは、前記ビアホールを通って前記導電性基板と電気的に接続される、
半導体デバイス。 - 前記基板はドープされたp型であり、1×1019ホール/cm3より大きいホール濃度を有する、請求項1に記載のIII-Nデバイス。
- 前記基板は、背面金属層を通して回路グランドに電気的に結合されるよう構成される、請求項2に記載のIII-Nデバイス。
- 前記III-N材料構造は、III-Nバッファ層と、III-Nチャネル層と、III-N障壁層とを備え、
前記バッファ層は、鉄、マグネシウムまたは炭素でドープされる、
請求項1に記載のIII-Nデバイス。 - 前記III-N障壁層と前記III-Nチャネル層との間の組成的相違によって、前記III-Nチャネル層内にラテラル2DEGチャネルが誘導され、
前記第1ソースおよび前記第1ドレインは、前記2DEGに電気的に接続される、
請求項4に記載のIII-Nデバイス。 - 前記III-Nバッファ層は4μmより大きい厚さを有し、600Vより大きい電圧をブロック可能である、請求項4に記載のIII-Nデバイス。
- 前記FETの前記第2ドレインは、はんだ、はんだペーストまたは導電性エポキシによって、前記III-Nデバイスの前記第1ソースと直接的に接触して電気的に接続される、請求項1に記載のIII-Nデバイス。
- 前記第1ゲートの上面は、全体が誘電材料内にカプセル化される、請求項1に記載のIII-Nデバイス。
- 前記III-N材料構造は、N極性配向に配向される、請求項1に記載のIII-Nデバイス。
- 前記デバイスは、さらに、前記第1ソースおよび前記第1ドレインの間に活性領域を備え、
前記ビアホールは前記活性領域の外側に形成される、
請求項1に記載のIII-Nデバイス。 - 前記FETは少なくとも部分的に前記活性領域の上方にある、請求項10に記載のIII-Nデバイス。
- 電子コンポーネントであって、
エンハンスメントモードトランジスタと、
導電性基板を備えるデプリーションモードトランジスタと、
導電性構造的パッケージベースを備えるパッケージであって、前記パッケージは前記エンハンスメントモードトランジスタおよび前記デプリーションモードトランジスタの双方を囲う、パッケージと、
を備え、
前記デプリーションモードトランジスタのドレイン電極は、前記パッケージのドレインリードに電気的に接続され、
前記エンハンスメントモードトランジスタのゲート電極は、前記パッケージのゲートリードに電気的に接続され、
前記エンハンスメントモードトランジスタのソース電極は、前記導電性構造的パッケージベースに電気的に接続され、
前記デプリーションモードトランジスタのゲート電極は、前記導電性基板と直接的に接触して電気的に接続され、
前記導電性基板は、前記導電性構造的パッケージベースと直接的に接触して電気的に接続され、
前記導電性構造的パッケージベースは、前記パッケージのソースリードに電気的に接続される、
電子コンポーネント。 - 前記デプリーションモードトランジスタの前記ゲート電極は、外部ゲートワイヤコネクタなしで前記パッケージの前記ソースリードに電気的に接続される、請求項12に記載の電子コンポーネント。
- 前記デプリーションモードトランジスタは、前記導電性基板上にIII-N材料構造を備える、請求項12に記載の電子コンポーネント。
- 前記デプリーションモードトランジスタの前記ゲート電極は、前記III-N材料構造の、前記導電性基板とは反対側上にあり、
前記III-N材料構造は、前記導電性基板へと延びるビアを含み、
前記デプリーションモードトランジスタの前記ゲート電極は、前記ビアを通って前記導電性基板に電気的に接続される、
請求項14に記載の電子コンポーネント。 - 前記ビアは、前記デプリーションモードトランジスタの活性領域の外側にある、請求項15に記載の電子コンポーネント。
- 前記エンハンスメントモードトランジスタのドレイン電極は、前記デプリーションモードトランジスタのソース電極と直接的に接触して電気的に接続され、
前記エンハンスメントモードトランジスタは、少なくとも部分的に、前記デプリーションモードトランジスタの前記活性領域の上方にある、
請求項12に記載の電子コンポーネント。 - 前記エンハンスメントモードトランジスタの前記ソース電極は、前記導電性基板を通って前記デプリーションモードトランジスタの前記ゲート電極に結合される、請求項15に記載の電子コンポーネント。
- 前記エンハンスメントモードトランジスタは、前記デプリーションモードトランジスタより低い降伏電圧を有する、請求項17に記載の電子コンポーネント。
- 前記III-N材料構造は、III-Nバッファ層、III-Nチャネル層およびIII-N障壁層を備え、
前記バッファ層は、鉄、マグネシウムまたは炭素でドープされる、
請求項14に記載の電子コンポーネント。 - 前記III-N障壁層と前記III-Nチャネル層との間の組成的相違によって、前記III-Nチャネル層内にラテラル2DEGチャネルが誘導される、請求項20に記載の電子コンポーネント。
- ハーフブリッジ回路であって、
高電圧ノードに接続される高位側スイッチと、
グランドノードに接続される低位側スイッチと、
前記高位側スイッチおよび前記低位側スイッチの間のノードに接続されるインダクタと、
を備え、
前記低位側スイッチは、低電圧エンハンスメントモードトランジスタと、高電圧III-Nデプリーションモードトランジスタとを備え、
前記ハーフブリッジ回路は、第1動作モードにおいて、前記高位側スイッチがオンにバイアスされ、前記低位側スイッチがオフにバイアスされている間に、電流が、前記高位側スイッチを第1方向に通り、前記インダクタを通って流れるよう構成され、
第2動作モードにおいて、前記高位側スイッチがオフにバイアスされ、前記低位側スイッチがオフにバイアスされている間に、電流が、前記低位側スイッチを第2方向に通り、前記インダクタを通って流れ、
第3動作モードにおいて、前記高位側スイッチがオフにバイアスされ、前記低位側スイッチがオンにバイアスされている間に、電流が、前記低位側スイッチを前記第2方向に通り、前記インダクタを通って流れ、
前記第2動作モードの間に、前記低位側スイッチを通って流れる逆DC電流は50Aより大きく、
前記第3動作モードの間に、前記III-Nデプリーションモードトランジスタのオン抵抗の増大は5%未満である、
ハーフブリッジ回路。 - 前記III-Nデプリーションモードトランジスタのゲート電極は導電性基板に接続され、
前記導電性基板は前記低位側スイッチのパッケージベースに取り付けられる、
請求項22に記載のハーフブリッジ回路。 - 前記エンハンスメントモードトランジスタの前記ソースは、前記低位側スイッチの前記パッケージベースに接続され、
前記III-Nデプリーションモードトランジスタの前記ソースは、前記エンハンスメントモードトランジスタの前記ドレインに接続される、
請求項23に記載のハーフブリッジ回路。 - 前記第1動作モードの間に、前記低位側スイッチは600Vより大きい電圧をブロックする、請求項24に記載のハーフブリッジ回路。
- 前記第1動作モードと前記第2動作モードとの間の遷移時間中に、前記III-Nデプリーションモードトランジスタの寄生ゲート・ドレインコンデンサを通って変位電流が流れる、請求項22に記載のハーフブリッジ回路。
- 前記第2動作モードの間、前記逆DC電流が前記エンハンスメントモードトランジスタのボディダイオードを通って流れる、請求項26に記載のハーフブリッジ回路。
- 前記エンハンスメントモードトランジスタはケイ素MOSFETである、請求項22に記載のハーフブリッジ回路。
- 前記高位側スイッチは第2ハイブリッドデバイスを備え、
前記第2ハイブリッドデバイスは、低電圧エンハンスメントモードトランジスタと、高電圧III-Nデプリーションモードトランジスタとを備える、
請求項22に記載のハーフブリッジ回路。 - パッケージ内にケーシングされた電子コンポーネントであって、
前記電子コンポーネントはハイブリッドIII-Nデバイスを備え、前記ハイブリッドIII-Nデバイスは、カスケード構成に配置された低電圧エンハンスメントモードトランジスタおよび高電圧III-Nデプリーションモードトランジスタを備え、
前記III-Nデバイスは、前記電子コンポーネントのゲートがオフにバイアスされている間、順方向に600Vをブロック可能であり、逆方向に50Aより大きい電流に耐えることができ、
前記電子コンポーネントの前記ゲートがオフにバイアスされている間に、逆方向の前記電流に耐えた後に、前記ゲートがオンにバイアスされている間の前記電子コンポーネントの抵抗増大は、5%未満である、
電子コンポーネント。 - 前記III-Nデプリーションモードトランジスタのゲート電極は、ケイ素基板に電気的に接続される、請求項30に記載のパッケージングされた電子コンポーネント。
- 前記ケイ素基板は、導電性構造的パッケージベースと直接的に接触して電気的に接続され、
前記構造的パッケージベースは、回路グランドに接続されるよう構成される、
請求項31に記載のパッケージングされた電子コンポーネント。 - 前記パッケージのソースリードは、前記導電性構造的パッケージベースに電気的に接続される、請求項32に記載のパッケージングされた電子コンポーネント。
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- 2020-03-20 CN CN202080036199.7A patent/CN113826206A/zh active Pending
- 2020-03-20 EP EP20774117.4A patent/EP3942609A4/en active Pending
- 2020-03-20 WO PCT/US2020/024015 patent/WO2020191357A1/en unknown
- 2020-03-20 JP JP2021556408A patent/JP2022525654A/ja active Pending
- 2020-03-20 US US17/047,602 patent/US11810971B2/en active Active
- 2020-03-23 TW TW109109618A patent/TW202101717A/zh unknown
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2023
- 2023-09-20 US US18/471,263 patent/US20240014312A1/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022533082A (ja) * | 2019-05-30 | 2022-07-21 | 蘇州捷芯威半導体有限公司 | 半導体デバイス、その製造方法、及び半導体パッケージ構造 |
JP7436514B2 (ja) | 2019-05-30 | 2024-02-21 | 蘇州捷芯威半導体有限公司 | 半導体デバイス、その製造方法、及び半導体パッケージ構造 |
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US20240014312A1 (en) | 2024-01-11 |
TW202101717A (zh) | 2021-01-01 |
US11810971B2 (en) | 2023-11-07 |
US20210408273A1 (en) | 2021-12-30 |
EP3942609A4 (en) | 2023-06-07 |
WO2020191357A1 (en) | 2020-09-24 |
CN113826206A (zh) | 2021-12-21 |
EP3942609A1 (en) | 2022-01-26 |
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