JP2022517876A - イオンの制御された注入のための基板およびイオンの制御された注入のための基板を作製する方法 - Google Patents
イオンの制御された注入のための基板およびイオンの制御された注入のための基板を作製する方法 Download PDFInfo
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- 239000007924 injection Substances 0.000 title claims abstract description 283
- 238000002347 injection Methods 0.000 title claims abstract description 281
- 150000002500 ions Chemical class 0.000 title claims abstract description 176
- 239000000758 substrate Substances 0.000 title claims abstract description 101
- 239000000463 material Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 14
- 239000002178 crystalline material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 3
- 238000001802 infusion Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
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Abstract
Description
-第1の材料
-注入深さ
-第2の材料
-注入されるイオンの材料
-注入されるイオンの運動エネルギー
-注入されるイオンの電荷状態
-第1および/または第2の材料に注入されるイオンの質量比、のうちの少なくとも1つに適合されるように選択されることを特徴とすることができる。
a)第1の材料から構成されたバルクを提供することと、
b)ステップa)において提供されたバルクの表面上の注入区域に位置付けられ、バルクの表面から離れる方向に注入方向とは反対側に延びる第1の材料のピラーを形成することと、
c)ステップb)において提供されたピラーを、第2の材料から構成された緩衝層によって注入方向に対して垂直方向に包囲することであって、緩衝層が、バルクの表面およびピラーの側面を本質的に覆っているように、包囲することと、を特徴とする。
10 基板
12 n層
14 p層
16 i層
20 バルク
22 表面
24 注入区域
26 注入深さ
28 注入領域
30 ピラー
32 側面
34 端部
36 照射面
38 軸
40 高さ
50 緩衝層
52 厚さ
60 電気接点
70 第1の材料
72 第2の材料
80 イオン
82 注入方向
84 衝突領域
86 伝搬方向
Claims (20)
- バルク(20)内へのイオン(80)の制御された注入のための基板(10)であって、前記基板(10)が、結晶性の第1の材料(70)から構成された前記バルク(20)を備え、前記バルク(20)が、注入領域(28)および表面(22)を備え、前記注入領域(28)が、前記バルク(20)内で、注入方向(82)に沿って、前記バルク(20)の前記表面(22)上の注入区域(24)よりも下の注入深さ(26)に位置付けられており、
前記基板(10)が、前記注入区域(24)に位置付けられ、前記バルク(20)の前記表面(22)から離れる方向に前記注入方向(82)とは反対側に延びている、前記第1の材料(70)から構成されたピラー(30)をさらに備え、前記ピラー(30)が、第2の材料(72)から構成された緩衝層(50)によって前記注入方向(82)に対して垂直方向に包囲されており、前記緩衝層(50)が、前記バルク(20)の前記表面(22)および前記ピラーの側面(32)を覆っていることを特徴とする、基板(10)。 - 前記ピラー(30)の照射面(36)が、前記緩衝層(50)によって覆われておらず、前記照射面(36)が、前記注入方向(82)に関して、前記バルク(20)とは反対側の前記ピラー(30)の端部(34)に位置付けられており、好ましくは、前記照射面(36)が、前記緩衝層(50)から離間配置されており、任意選択で、前記注入方向(82)に沿った前記ピラー(30)の高さ(40)が、前記注入方向(82)に沿って測定された前記緩衝層(50)の厚さ(52)と少なくとも同じサイズのものであることを特徴とする、請求項1に記載の基板(10)。
- 前記バルク(20)の前記第1の材料(70)の結晶構造が、前記ピラー内に続いていることを特徴とする、請求項1または2に記載の基板(10)。
- 前記基板(10)が、複数の注入領域(28)に関して相応に配置された複数のピラー(30)、特に同一のピラー(30)を備え、好ましくは、前記複数のピラー(30)がアレイに配列されており、任意選択で、前記複数のピラー(30)の各ピラー(30)の高さ(40)が同じであることを特徴とする、請求項1~3のいずれか一項に記載の基板(10)。
- 前記第1の材料(70)が、前記第2の材料(72)とは異なることを特徴とする、請求項1~4のいずれか一項に記載の基板(10)。
- 前記第1の材料(70)が、結晶性半導体、好ましくはシリコンまたはダイヤモンドライクカーボンであることを特徴とする、請求項1~5のいずれか一項に記載の基板(10)。
- 前記第2の材料(72)が、非晶質材料、特に酸化物または窒化物、好ましくは前記第1の材料(70)の多結晶バージョンであることを特徴とする、請求項1~6のいずれか一項に記載の基板(10)。
- 前記注入区域(24)が、1x1μm2未満、特に100×100nm2未満、好ましくは7x7nm2を覆っていることを特徴とする、請求項1~7のいずれか一項に記載の基板(10)。
- 前記注入方向(82)に対して垂直な前記ピラー(30)の断面が、前記注入区域(24)よりも大きく、特に前記注入区域(24)の2倍の大きさ、好ましくは前記注入区域(24)の10倍の大きさであることを特徴とする、請求項1~8のいずれか一項に記載の基板(10)。
- 前記ピラー(30)の軸(38)が、前記注入方向(82)に対して同一直線上にあるか、または少なくとも本質的に同一直線上にあることを特徴とする、請求項1~9のいずれか一項に記載の基板(10)。
- 前記注入方向(82)に沿った前記ピラー(30)の高さ(40)が、以下の項目:
-第1の材料(70)
-注入深さ(26)
-第2の材料(72)
-注入される前記イオン(80)の材料
-注入される前記イオン(80)の運動エネルギー
-注入される前記イオン(80)の電荷状態
-前記第1の材料(70)および/または前記第2の材料(72)に注入される前記イオン(80)の質量比、のうちの少なくとも1つに適合されるように選択されることを特徴とする、請求項1~10のいずれか一項に記載の基板(10)。 - 少なくとも1つの電気接点(60)が、前記バルク(20)に接続されて、前記注入領域(28)内へのイオン(80)の注入を位置合わせすることを特徴とする、請求項1~11のいずれか一項に記載の基板(10)。
- 少なくとも1つのイオン(80)、好ましくは単一のイオン(80)が、前記注入方向(82)に沿って、前記ピラー(30)を通って前記注入領域(28)に注入されることを特徴とする、請求項1~12のいずれか一項に記載の基板(10)。
- 前記ピラー(30)および/または前記緩衝層(50)が、前記バルク(20)の前記表面(22)から除去されることを特徴とする、請求項13に記載の基板(10)。
- バルク(20)内へのイオン(80)の制御された注入のための基板(10)、好ましくは請求項1~14のいずれか一項に記載の基板(10)を作製する方法であって、前記基板(10)が、結晶性の第1の材料(70)から構成された前記バルク(20)を備え、前記バルク(20)が、注入領域(28)および表面(22)を備え、前記注入領域(28)が、前記バルク(20)内で、注入方向(82)に沿って、前記バルク(20)の前記表面(22)上の注入区域(24)よりも下の注入深さ(26)に位置付けられており、
以下のステップ:
a)前記第1の材料(70)から構成された前記バルク(20)を提供することと、
b)ステップa)において提供された前記バルク(20)の前記表面(22)上の前記注入区域(24)に位置付けられ、前記バルク(20)の前記表面(22)から離れる方向に前記注入方向(82)とは反対側に延びる前記第1の材料(70)のピラー(30)を形成することと、
c)ステップb)において提供された前記ピラー(30)を、第2の材料(72)から構成された緩衝層(50)によって前記注入方向(82)に対して垂直方向に包囲することであって、前記緩衝層(50)が、前記バルク(20)の前記表面(22)および前記ピラーの前記側面(32)を本質的に覆っているように、包囲することと、を特徴とする、方法。 - ステップb)が、前記ピラーを形成するためのエッチングプロセスを含むことを特徴とする、請求項15に記載の方法。
- ステップc)の後、追加のステップd)が実行され、ステップd)が、少なくとも1つのイオン(80)を前記基板(10)内に、前記注入方向(82)に沿って前記ピラー(30)を通じて前記注入領域(28)内への注入を含むことを特徴とする、請求項15または16に記載の方法。
- ステップd)の後、追加のステップe)が実行され、ステップe)が、前記緩衝層(50)および前記ピラーを除去することを含むことを特徴とする、請求項17に記載の方法。
- ステップd)が、前記基板(10)を少なくとも77°K、好ましくは少なくとも4°Kの温度に冷却することを含むことを特徴とする、請求項17または18に記載の方法。
- ステップd)が、イオン(80)、好ましくは単一のイオン(80)の前記注入領域(28)内への前記注入を位置合わせすることを含むことを特徴とする、請求項17~19のいずれか一項に記載の方法。
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DE102019100312.1 | 2019-01-08 | ||
PCT/IB2020/020004 WO2020144543A1 (en) | 2019-01-08 | 2020-01-08 | Substrate for controlled implantation of ions and method of preparing substrate for controlled implantation of ions |
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US4224733A (en) * | 1977-10-11 | 1980-09-30 | Fujitsu Limited | Ion implantation method |
JPS6142911A (ja) * | 1984-08-06 | 1986-03-01 | Nec Corp | イオン注入による導電層形成方法 |
SE0104164L (sv) * | 2001-12-11 | 2003-06-12 | Ericsson Telefon Ab L M | Högspännings-mos-transistor |
AU2005242730B2 (en) | 2004-05-18 | 2011-11-17 | Newsouth Innovations Pty Limited | Implanted counted dopant ions |
US7344963B2 (en) | 2005-05-27 | 2008-03-18 | United Microelectronics Corp. | Method of reducing charging damage to integrated circuits during semiconductor manufacturing |
US20080073570A1 (en) | 2006-07-10 | 2008-03-27 | Yu-Hsien Chen | Method of repeatedly using a control wafer to monitor treatments |
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