JP2022507256A5 - - Google Patents

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Publication number
JP2022507256A5
JP2022507256A5 JP2021525734A JP2021525734A JP2022507256A5 JP 2022507256 A5 JP2022507256 A5 JP 2022507256A5 JP 2021525734 A JP2021525734 A JP 2021525734A JP 2021525734 A JP2021525734 A JP 2021525734A JP 2022507256 A5 JP2022507256 A5 JP 2022507256A5
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JP
Japan
Prior art keywords
acid
film
unstable film
unstable
radiation
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JP2021525734A
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English (en)
Japanese (ja)
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JP2022507256A (ja
JP7371308B2 (ja
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Priority claimed from PCT/US2019/060872 external-priority patent/WO2020102164A1/en
Publication of JP2022507256A publication Critical patent/JP2022507256A/ja
Publication of JP2022507256A5 publication Critical patent/JP2022507256A5/ja
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Publication of JP7371308B2 publication Critical patent/JP7371308B2/ja
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JP2021525734A 2018-11-13 2019-11-12 有機膜の平面化法 Active JP7371308B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862760622P 2018-11-13 2018-11-13
US62/760,622 2018-11-13
PCT/US2019/060872 WO2020102164A1 (en) 2018-11-13 2019-11-12 Method for planarization of organic films

Publications (3)

Publication Number Publication Date
JP2022507256A JP2022507256A (ja) 2022-01-18
JP2022507256A5 true JP2022507256A5 (enExample) 2022-08-04
JP7371308B2 JP7371308B2 (ja) 2023-10-31

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ID=70550777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021525734A Active JP7371308B2 (ja) 2018-11-13 2019-11-12 有機膜の平面化法

Country Status (6)

Country Link
US (1) US11393694B2 (enExample)
JP (1) JP7371308B2 (enExample)
KR (1) KR102780324B1 (enExample)
CN (1) CN113016054B (enExample)
TW (1) TWI842773B (enExample)
WO (1) WO2020102164A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11656550B2 (en) 2020-09-01 2023-05-23 Tokyo Electron Limited Controlling semiconductor film thickness
WO2022119615A1 (en) * 2020-12-02 2022-06-09 Tokyo Electron Limited Method for recessing a fill material within openings formed on a patterned substrate
EP4030465B1 (en) * 2021-01-14 2024-10-02 Imec VZW A patterning method
CN117916852A (zh) * 2021-08-25 2024-04-19 杰米纳蒂奥公司 半导体图案化中的辅助特征放置
CN117941028A (zh) 2021-08-25 2024-04-26 杰米纳蒂奥公司 自对准的堆建方法
CN114004101B (zh) * 2021-11-08 2025-09-26 长鑫存储技术有限公司 旋涂模拟的方法、装置、设备及存储介质
CN116741626A (zh) 2022-03-04 2023-09-12 长鑫存储技术有限公司 一种半导体结构的制备方法及半导体结构
TWI824680B (zh) * 2022-08-25 2023-12-01 美商杰米納帝歐股份有限公司 自對準堆積方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128636A (ja) * 1983-12-16 1985-07-09 Toshiba Corp 半導体装置の製造方法
US5494854A (en) * 1994-08-17 1996-02-27 Texas Instruments Incorporated Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO2 films
US6218316B1 (en) * 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6423465B1 (en) * 2000-01-28 2002-07-23 International Business Machines Corporation Process for preparing a patterned continuous polymeric brush on a substrate surface
JP2002006512A (ja) * 2000-06-20 2002-01-09 Mitsubishi Electric Corp 微細パターン形成方法、微細パターン形成用材料、およびこの微細パターン形成方法を用いた半導体装置の製造方法
JP2003273211A (ja) * 2002-03-14 2003-09-26 Sony Corp 半導体装置の製造方法
US6905621B2 (en) 2002-10-10 2005-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing the etch transfer of sidelobes in contact hole patterns
US7393789B2 (en) * 2005-09-01 2008-07-01 Micron Technology, Inc. Protective coating for planarization
TWI277180B (en) * 2005-12-14 2007-03-21 Fujitsu Ltd Semiconductor device and the manufacturing method thereof
TWI374478B (en) * 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
KR101439394B1 (ko) 2008-05-02 2014-09-15 삼성전자주식회사 산 확산을 이용하는 더블 패터닝 공정에 의한 반도체소자의 미세 패턴 형성 방법
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8097402B2 (en) * 2009-03-31 2012-01-17 Tokyo Electron Limited Using electric-field directed post-exposure bake for double-patterning (D-P)
JP5780222B2 (ja) * 2011-09-16 2015-09-16 信越化学工業株式会社 パターン形成方法
JP2013143527A (ja) * 2012-01-12 2013-07-22 Toshiba Corp パターン形成方法及びパターン形成材料
KR20160083080A (ko) * 2013-11-08 2016-07-11 도쿄엘렉트론가부시키가이샤 화학적 폴리싱 및 평탄화를 위한 방법
CN104821318A (zh) * 2014-01-30 2015-08-05 中芯国际集成电路制造(上海)有限公司 分离栅存储器件及其形成方法
KR102245135B1 (ko) 2014-05-20 2021-04-28 삼성전자 주식회사 패턴 형성 방법 및 이를 이용한 집적회로 소자의 제조 방법
TWI584061B (zh) * 2014-08-27 2017-05-21 羅門哈斯電子材料有限公司 多重圖案的形成方法
KR20160121059A (ko) 2015-04-09 2016-10-19 에스케이하이닉스 주식회사 미세 패턴 형성 방법
JP6893613B2 (ja) * 2015-04-13 2021-06-23 東京エレクトロン株式会社 基板を平坦化するためのシステム及び方法
US11003074B2 (en) 2017-05-01 2021-05-11 Rohm And Haas Electronic Materials Llc Pattern formation methods and photoresist pattern overcoat compositions

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