WO2020102164A1 - Method for planarization of organic films - Google Patents

Method for planarization of organic films Download PDF

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Publication number
WO2020102164A1
WO2020102164A1 PCT/US2019/060872 US2019060872W WO2020102164A1 WO 2020102164 A1 WO2020102164 A1 WO 2020102164A1 US 2019060872 W US2019060872 W US 2019060872W WO 2020102164 A1 WO2020102164 A1 WO 2020102164A1
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WO
WIPO (PCT)
Prior art keywords
acid
film
labile
radiation
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2019/060872
Other languages
English (en)
French (fr)
Inventor
Jeffrey Smith
Anton Devilliers
Robert Brandt
Jodi Grzeskowiak
Daniel Fulford
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
Original Assignee
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron US Holdings Inc filed Critical Tokyo Electron Ltd
Priority to CN201980075002.8A priority Critical patent/CN113016054B/zh
Priority to KR1020217017521A priority patent/KR102780324B1/ko
Priority to JP2021525734A priority patent/JP7371308B2/ja
Publication of WO2020102164A1 publication Critical patent/WO2020102164A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
    • H10P95/066—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Definitions

  • FIG. 3B is a cross-sectional perspective view of a substrate segment showing a coated topography pattern, according to an embodiment of the present disclosure.
  • FIG. 3D is a cross-sectional perspective view of a substrate segment showing an acid-labile film coated with an acid source film, according to an embodiment of the present disclosure.
  • FIG. 31 is a cross-sectional perspective view of a substrate segment showing a planarizing film with trench patterns, according to an embodiment of the present disclosure.
  • FIG. 4C is a top view of a substrate segment showing emulation of additional masks on module level processes, according to an embodiment of the present disclosure.
  • FIG. 5B shows structural formulas of an acid generation mechanism for a PAG, according to an embodiment of the present disclosure.
  • the acid-containing film is configured to generate a predetermined quantity of acid as a function of exposure energy used/received. Acid generated from exposure energy can be diffused down to the acid-labile film underneath and cause either a de-cross-linking reaction within the dBARC film or cause a photo-dissociation reaction for the case of a photoresist film. Thus, the exposure energy directly and locally alters a thickness of the acid-labile film following exposure, thermal diffusion, and chemical development.
  • the acid-labile film 325 can be dBARC.
  • the dBARC can generate acid through inclusion of a photoacid generator (PAG) within the acid-labile film 325, in which exposure to the predetermined wavelength of light converts the PAG to a free anion, resulting in the de-crosslinking reaction.
  • PAG photoacid generator
  • a chemical composition of the acid source film 330 can be optically transparent to light being used in conjunction with the sensitivity of the PAG.
  • a photosensitive response can include dissociating an anion and cation in the PAG, thus producing a free acid which can then react with the de-crosslinker in the acid-labile film 325 applied overtop the planarizing film 315.
  • the acid source film 330 can include a resin or polymer transparent to the predetermined wavelength in which the PAG can be intermixed within and equally distributed to ensure that a consistent film of a consistent thickness can be deposited on top of the acid-labile film 325. After dissociation of the anion and cation from the PAG, diffusion of the acid through the acid-labile film 325 can be controlled based on selected properties of the acid-labile film 325.
  • the acid source film 330 can include a solvent system that will not damage the underlying acid-labile film 325, and the acid source film 330 can be very soluble itself in either aqueous or commonly used developer chemistries used in photolithography, for example TMAH.
  • the predetermined range of wavelengths for semiconductor device fabrication can be, for example, 170 nm to 400 nm, though wavelengths outside of this range can also be used.
  • the acid source film 330 can include a fluorinated alcohol-based methacrylate polymer in a solvent co-system composed of methyl isobutyl carbinol and propylene glycol methyl ether acetate.
  • the example resin system is shown in FIG. 5 A and is transparent at 193 nm exposure wavelength, according to an embodiment of the present disclosure.
  • FIG. 31 shows the planarizing film 315 with the trench patterns 305a, according to an embodiment of the present disclosure.
  • the line spacers 305 can be exhumed through an etch process to tone-invert the line spacer 305 pattern to a plurality of trench patterns 305a (herein referred to as“trench patterns 305a”) contained within the remaining planarizing film 315.
  • Techniques herein include a photomasking process to generate correction images to expose on substrates.
  • Such photomask generation can include emulation techniques.
  • Using emulation techniques can improve process times as compared to measuring and mapping topographies with metrology tools.
  • the acid source film 330 can be coated overtop the acid-labile film 325, or in the case of a photosensitive film being used in place of the acid-labile film 325 (an i-line photoresist film, for example), no acid source film 330 is required overtop.
  • the acid-labile film 325 does not have an integrated PAG system and is dependent on the acid to be supplied by the overlying acid source film 330.
  • the acid-labile film 325 can be significantly planarized.
  • the acid-labile film 325 can be further recessed by, for example, the etch recess process, or further exposure and acid diffusion.
  • the line spacers 305 can be exhumed through an etch process to tone-invert the line spacer 305 pattern to a plurality of trench patterns 305a contained within the remaining acid-labile film 325.
  • Correction mask layout data is generated based on the predicted z-height values of the overcoat.
  • this correction data can be in the form of an OASIS or GDS II file.
  • a map of predicted z-height values is created from modeling film deposition, and then correction data can be generated.
  • correction data can identify how much film should be removed at each coordinate location on the substrate to result in a film height that is generally planar, or that has less z-height differences as compared to the initially deposited film.
  • the substrate is processed according to the first microfabrication processing and according to the second microfabrication processing, resulting in the overcoat deposited on the second topographic pattern.
  • physical processing steps are executed such as creating a mask pattern, transferring a pattern by etching, depositing films, et cetera.
  • Each of the first microfabrication processing and the second microfabrication processing can include multiple processing steps or treatments.
  • substrate or“target substrate” as used herein genetically refers to an object being processed in accordance with the invention.
  • the substrate may include any material portion or structure of a device, particularly a semiconductor or other electronics device, and may, for example, be a base substrate structure, such as a semiconductor wafer, reticle, or a layer on or overlying a base substrate structure such as a thin film.
  • substrate is not limited to any particular base structure, underlying layer or overlying layer, patterned or un-patterned, but rather, is contemplated to include any such layer or base structure, and any combination of layers and/or base structures.
  • the description may reference particular types of substrates, but this is for illustrative purposes only.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
PCT/US2019/060872 2018-11-13 2019-11-12 Method for planarization of organic films Ceased WO2020102164A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201980075002.8A CN113016054B (zh) 2018-11-13 2019-11-12 用于有机膜的平坦化的方法
KR1020217017521A KR102780324B1 (ko) 2018-11-13 2019-11-12 유기 필름의 평탄화 방법
JP2021525734A JP7371308B2 (ja) 2018-11-13 2019-11-12 有機膜の平面化法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862760622P 2018-11-13 2018-11-13
US62/760,622 2018-11-13

Publications (1)

Publication Number Publication Date
WO2020102164A1 true WO2020102164A1 (en) 2020-05-22

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PCT/US2019/060872 Ceased WO2020102164A1 (en) 2018-11-13 2019-11-12 Method for planarization of organic films

Country Status (6)

Country Link
US (1) US11393694B2 (enExample)
JP (1) JP7371308B2 (enExample)
KR (1) KR102780324B1 (enExample)
CN (1) CN113016054B (enExample)
TW (1) TWI842773B (enExample)
WO (1) WO2020102164A1 (enExample)

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JP2023552763A (ja) * 2020-12-02 2023-12-19 東京エレクトロン株式会社 パターニングされた基板に形成された開口内の充填材を凹ませる方法
JP2024512830A (ja) * 2022-03-04 2024-03-21 チャンシン メモリー テクノロジーズ インコーポレイテッド 半導体構造の製造方法及び半導体構造

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EP4030465B1 (en) * 2021-01-14 2024-10-02 Imec VZW A patterning method
CN117916852A (zh) * 2021-08-25 2024-04-19 杰米纳蒂奥公司 半导体图案化中的辅助特征放置
CN117941028A (zh) 2021-08-25 2024-04-26 杰米纳蒂奥公司 自对准的堆建方法
CN114004101B (zh) * 2021-11-08 2025-09-26 长鑫存储技术有限公司 旋涂模拟的方法、装置、设备及存储介质
TWI824680B (zh) * 2022-08-25 2023-12-01 美商杰米納帝歐股份有限公司 自對準堆積方法

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