JP7371308B2 - 有機膜の平面化法 - Google Patents
有機膜の平面化法 Download PDFInfo
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- JP7371308B2 JP7371308B2 JP2021525734A JP2021525734A JP7371308B2 JP 7371308 B2 JP7371308 B2 JP 7371308B2 JP 2021525734 A JP2021525734 A JP 2021525734A JP 2021525734 A JP2021525734 A JP 2021525734A JP 7371308 B2 JP7371308 B2 JP 7371308B2
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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Description
本開示は、参照によりその全体が本明細書に組み込まれる、2018年11月13日に出願された米国仮特許出願第62/760622号の利益を主張するものである。
Claims (16)
- 膜を平面化する方法であって、
基材の表面上に構造を提供するステップであって、前記構造は、前記基材にわたって空間的に可変な密度を有する、ステップと、
前記構造及び前記基材の上部に第1の酸不安定性膜を堆積させるステップであって、前記第1の酸不安定性膜は、前記構造の間を充填する、ステップと、
前記第1の酸不安定性膜の上部に第2の酸不安定性膜を堆積させるステップと、
前記第2の酸不安定性膜の上部に酸供給源膜を堆積させるステップであって、前記酸供給源膜は、酸発生剤を含み、所定の光の波長を有する放射線を受光することに応じて酸が発生する、ステップと、
放射線のパターンを前記酸供給源膜にわたって投射するステップであって、前記放射線は、前記放射線のパターンの所定の領域において、空間的に可変の強度を有する、ステップと、
前記酸供給源膜から拡散された酸により、可溶化された前記第2の酸不安定性膜の一部を除去するステップであって、前記可溶化された一部は、所定の除去流体から保護されない、ステップと、
前記酸によって可溶化された前記第2の酸不安定性膜の前記一部を除去した後、前記第2の酸不安定性膜の平面性を決定するステップと、
を有し、
前記第2の酸不安定性膜の前記平面性が、所定の閾値より低いことを決定することに応じて、前記酸によって可溶化された前記第2の酸不安定性膜の前記一部を除去した後、前記第2の酸不安定性膜上に前記第2の酸不安定性膜の第2の堆積が実施され、前記所定の閾値は、前記構造の高度によって決定される、方法。 - さらに、
前記第2の酸不安定性膜の前記平面性が、前記所定の閾値を越えることを決定することに応じて、前記第2の酸不安定性膜を所定の厚さ未満にして凹部形成するステップ
を有する、請求項1に記載の方法。 - 前記放射線のパターンは、前記基材の前記表面上の前記構造の上部における前記第1の酸不安定性膜の堆積をエミュレーションすることにより決定される、請求項1に記載の方法。
- 前記酸供給源膜上に前記放射線のパターンを投射するステップは、高度マップに基づき、前記放射線の前記空間的に可変な強度を変化させるステップを有し、
前記高度マップは、前記基材にわたる前記第2の酸不安定性膜の上部表面に沿って、高度値を特徴づける、請求項1に記載の方法。 - 前記酸発生剤は、光酸発生剤(PAG)であり、
前記放射線のパターンを投射するステップにより、前記放射線を受光することに応じて、前記PAGが酸を発生し、
前記放射線のパターンの前記所定の領域に生じる前記酸の濃度は、前記高度マップに基づく、請求項4に記載の方法。 - 前記第2の酸不安定性膜は、所定の濃度閾値を超える前記酸の存在に応じて、溶解度シフトを示す、請求項1に記載の方法。
- さらに、前記第1の酸不安定性膜の層パターンを下側層に転写するステップを有する、請求項6に記載の方法。
- さらに、
所定の時間、所定の温度で前記基材を焼成するステップを有し、
前記焼成するステップは、前記第2の酸不安定性膜への酸の拡散を促進し、
前記第2の酸不安定性膜への前記酸の拡散距離は、前記所定の時間及び前記所定の温度に基づく、請求項1に記載の方法。 - 前記放射線のパターンを投射するステップは、独立してアドレス指定可能な投射点の配列を含むピクセルベースの投射システムによって実施される、請求項1に記載の方法。
- 前記放射線のパターンを投射するステップは、レチクルを用いて実施され、前記放射線のパターンが形成される、請求項1に記載の方法。
- 堆積された前記第1の酸不安定性膜のトポロジーは、非平面であり、前記構造の前記空間的に可変な密度に基づく、請求項1に記載の方法。
- 膜を平面化する方法であって、
基材の表面上に構造を提供するステップであって、前記構造は、前記表面にわたって、空間的に可変な密度を有する、ステップと、
前記構造及び前記基材上に第1の酸不安定性膜を堆積させるステップであって、前記第1の酸不安定性膜は、前記構造の間を充填し、前記構造と接触する、ステップと、
前記第1の酸不安定性膜の上部に、酸供給源膜を堆積させるステップであって、前記酸供給源膜は、酸発生剤を含み、所定の光の波長を有する放射線を受光することに応じて酸を発生するように構成される、ステップと、
放射線の補正パターンを前記酸供給源膜に投射するステップであって、前記放射線の補正パターンは、前記放射線の補正パターンの所定の領域に空間的に可変な強度を有する、ステップと、
前記酸供給源膜から拡散した酸により可溶化された前記第1の酸不安定性膜の一部を除去するステップであって、前記可溶化された一部は、所定の除去流体から保護されない、ステップと、
前記酸により可溶化された前記第1の酸不安定性膜の前記一部を除去した後、前記第1の酸不安定性膜の平面性を決定するステップと、
を有し、
前記第1の酸不安定性膜の前記平面性が、所定の閾値より低いことを決定することに応じて、前記酸により可溶化された前記第1の酸不安定性膜の前記一部を除去した後、前記第1の酸不安定性膜の上部に、前記第1の酸不安定性膜の第2の堆積が実施され、前記所定の閾値は、前記構造の高度によって決定される、方法。 - さらに、前記放射線の補正パターンを生成し、前記構造の製造プロセス、ならびに前記構造及び前記基材の上部の前記第1の酸不安定性膜の堆積をエミュレーションすることにより、前記酸供給源膜に投射するステップを有する、請求項12に記載の方法。
- 前記酸供給源膜上に前記放射線の補正パターンを投射するステップは、高度マップに基づき、前記放射線の前記空間的に可変の強度を変化させるステップを有し、
前記高度マップは、前記基材にわたって前記第1の酸不安定性膜の上部表面に沿って、高度値を特徴づける、請求項13に記載の方法。 - 前記酸発生剤は、光酸発生剤(PAG)であり、
前記放射線の補正パターンを投射するステップにより、前記放射線を受光することに応じて前記PAGが酸を発生し、
前記放射線の補正パターンの前記所定の領域に生じる前記酸の濃度は、高度マップに基づく、請求項13に記載の方法。 - さらに、
前記第1の酸不安定性膜の前記平面性が、前記所定の閾値を越えることを決定することに応じて、前記第1の酸不安定性膜を所定の厚さ未満にして凹部形成するステップ、
を有する、請求項12に記載の方法。
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