JP2022506438A5 - - Google Patents
Info
- Publication number
- JP2022506438A5 JP2022506438A5 JP2021523818A JP2021523818A JP2022506438A5 JP 2022506438 A5 JP2022506438 A5 JP 2022506438A5 JP 2021523818 A JP2021523818 A JP 2021523818A JP 2021523818 A JP2021523818 A JP 2021523818A JP 2022506438 A5 JP2022506438 A5 JP 2022506438A5
- Authority
- JP
- Japan
- Prior art keywords
- mask
- tungsten
- patterned
- target layer
- vertical growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862755846P | 2018-11-05 | 2018-11-05 | |
| US62/755,846 | 2018-11-05 | ||
| PCT/US2019/058631 WO2020096817A1 (en) | 2018-11-05 | 2019-10-29 | Directional deposition in etch chamber |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022506438A JP2022506438A (ja) | 2022-01-17 |
| JP2022506438A5 true JP2022506438A5 (https=) | 2022-11-04 |
| JP7561123B2 JP7561123B2 (ja) | 2024-10-03 |
Family
ID=70612334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021523818A Active JP7561123B2 (ja) | 2018-11-05 | 2019-10-29 | エッチングチャンバーにおける方向性堆積 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11742212B2 (https=) |
| JP (1) | JP7561123B2 (https=) |
| KR (1) | KR102834037B1 (https=) |
| CN (1) | CN112970096B (https=) |
| TW (2) | TWI850276B (https=) |
| WO (1) | WO2020096817A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7126381B2 (ja) * | 2018-05-21 | 2022-08-26 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| JP7174634B2 (ja) * | 2019-01-18 | 2022-11-17 | 東京エレクトロン株式会社 | 膜をエッチングする方法 |
| US11244903B2 (en) | 2019-12-30 | 2022-02-08 | Micron Technology, Inc. | Tungsten structures and methods of forming the structures |
| CN115699255A (zh) * | 2020-07-02 | 2023-02-03 | 应用材料公司 | 用于光刻应用的光刻胶层上的碳的选择性沉积 |
| US11756790B2 (en) * | 2021-03-09 | 2023-09-12 | Tokyo Electron Limited | Method for patterning a dielectric layer |
| US12543559B2 (en) | 2021-03-29 | 2026-02-03 | Micron Technology, Inc. | Memory device including control gates having tungsten structure |
| US12424553B2 (en) | 2021-03-29 | 2025-09-23 | Micron Technology, Inc. | Memory device including control gates having tungsten structure |
| TWI828187B (zh) | 2021-06-22 | 2024-01-01 | 日商東京威力科創股份有限公司 | 蝕刻方法及電漿處理裝置 |
| JP7250895B2 (ja) * | 2021-06-22 | 2023-04-03 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| KR20240121327A (ko) * | 2021-12-28 | 2024-08-08 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 플라즈마 처리 장치 |
| WO2023137275A1 (en) * | 2022-01-13 | 2023-07-20 | Lam Research Corporation | High selectivity and uniform dielectric etch |
| CN116997995A (zh) * | 2022-03-02 | 2023-11-03 | 株式会社日立高新技术 | 等离子处理方法 |
| JP7257088B1 (ja) * | 2022-03-24 | 2023-04-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理システム |
| JP7720282B2 (ja) * | 2022-06-22 | 2025-08-07 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| JP7808529B2 (ja) * | 2022-08-31 | 2026-01-29 | 東京エレクトロン株式会社 | 基板処理方法及びプラズマ処理装置 |
| JP2024053900A (ja) * | 2022-10-04 | 2024-04-16 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| TW202437380A (zh) * | 2022-10-27 | 2024-09-16 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理裝置 |
| CN118197917A (zh) * | 2022-12-12 | 2024-06-14 | 中微半导体设备(上海)股份有限公司 | 一种晶圆处理方法及用于晶圆处理的刻蚀-沉积一体设备 |
| US20250273466A1 (en) * | 2024-02-27 | 2025-08-28 | Tokyo Electron Limited | Vertical feature growth using fluorine-containing gas |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0594970A (ja) * | 1991-10-01 | 1993-04-16 | Toshiba Corp | 薄膜形成方法 |
| JPH05265189A (ja) * | 1992-03-17 | 1993-10-15 | Fujitsu Ltd | フォトマスク及びその製造方法 |
| KR100327346B1 (ko) * | 1999-07-20 | 2002-03-06 | 윤종용 | 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법 |
| US6451705B1 (en) * | 2000-08-31 | 2002-09-17 | Micron Technology, Inc. | Self-aligned PECVD etch mask |
| TW575907B (en) * | 2002-12-24 | 2004-02-11 | Macronix Int Co Ltd | Patterning method for fabricating integrated circuit |
| TWI255502B (en) * | 2005-01-19 | 2006-05-21 | Promos Technologies Inc | Method for preparing structure with high aspect ratio |
| WO2008015912A1 (en) * | 2006-07-31 | 2008-02-07 | Tokyo Electron Limited | Substrate processing apparatus, program, recording medium and conditioning necessity determining method |
| US7959975B2 (en) * | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
| US9034760B2 (en) * | 2012-06-29 | 2015-05-19 | Novellus Systems, Inc. | Methods of forming tensile tungsten films and compressive tungsten films |
| US9362133B2 (en) | 2012-12-14 | 2016-06-07 | Lam Research Corporation | Method for forming a mask by etching conformal film on patterned ashable hardmask |
| JP6311547B2 (ja) * | 2013-11-05 | 2018-04-18 | 東京エレクトロン株式会社 | マスク構造体の形成方法、成膜装置及び記憶媒体 |
| US9236292B2 (en) | 2013-12-18 | 2016-01-12 | Intel Corporation | Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) |
| JP6489951B2 (ja) * | 2015-06-12 | 2019-03-27 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
| JP6514138B2 (ja) * | 2016-03-10 | 2019-05-15 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
| US9673058B1 (en) | 2016-03-14 | 2017-06-06 | Lam Research Corporation | Method for etching features in dielectric layers |
| JP6883495B2 (ja) * | 2017-09-04 | 2021-06-09 | 東京エレクトロン株式会社 | エッチング方法 |
| KR102460795B1 (ko) * | 2018-05-09 | 2022-10-28 | 도쿄엘렉트론가부시키가이샤 | 낮은 종횡비 적층물의 패터닝을 위한 방법 및 시스템 |
| US10978301B2 (en) * | 2018-08-31 | 2021-04-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Morphology of resist mask prior to etching |
-
2019
- 2019-10-29 WO PCT/US2019/058631 patent/WO2020096817A1/en not_active Ceased
- 2019-10-29 KR KR1020217017304A patent/KR102834037B1/ko active Active
- 2019-10-29 CN CN201980072838.2A patent/CN112970096B/zh active Active
- 2019-10-29 US US17/309,188 patent/US11742212B2/en active Active
- 2019-10-29 JP JP2021523818A patent/JP7561123B2/ja active Active
- 2019-11-04 TW TW108139872A patent/TWI850276B/zh active
- 2019-11-04 TW TW113125059A patent/TWI885979B/zh active
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