JP2021534595A - ナノワイヤ発光スイッチデバイス及びその方法 - Google Patents
ナノワイヤ発光スイッチデバイス及びその方法 Download PDFInfo
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- JP2021534595A JP2021534595A JP2021533388A JP2021533388A JP2021534595A JP 2021534595 A JP2021534595 A JP 2021534595A JP 2021533388 A JP2021533388 A JP 2021533388A JP 2021533388 A JP2021533388 A JP 2021533388A JP 2021534595 A JP2021534595 A JP 2021534595A
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- light emitting
- nanowire
- device driver
- emitting diode
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- 238000000034 method Methods 0.000 title claims description 45
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- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
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- 229910002601 GaN Inorganic materials 0.000 description 33
- 238000005516 engineering process Methods 0.000 description 26
- 230000012010 growth Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
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- 230000008901 benefit Effects 0.000 description 5
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000003491 array Methods 0.000 description 3
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
この技術は、一般に、ナノワイヤ構造に関し、より詳細には、ナノワイヤ発光スイッチデバイス及びその方法に関する。
現在のディスプレイ解像度は、その実際的な限界に到達しつつある。ピクセル密度及び解像度での進展を可能にするために、ディスプレイに含まれる薄膜トランジスタ(TFT)のサイズをさらに縮小する必要がある。
ナノワイヤシステムは、基板と、基板の表面から軸に沿って延びる少なくとも1つのナノワイヤ構造とを含む。ナノワイヤ構造は、発光ダイオードと、発光ダイオードの動作状態を制御するために電気的に結合されたデバイスドライバとを含む。発光ダイオード及びデバイスドライバは、少なくとも1つのドープ領域をそれぞれ共有するように統合される。
図1A〜図1Cに、ナノワイヤアレイシステム20(1)の一例を示す。ナノワイヤアレイシステム20(1)は、他の構成の他のタイプ及び/または数のシステム、デバイス、構成要素、層、領域、または他の要素を含む場合があるが、複数の離間したナノワイヤ発光スイッチデバイス11と、導電層12、13、及び14と、絶縁層16と、基板17とを含む。この技術は、単軸配向の統合された共有層構造によって高ピクセル密度アレイを容易に製作できるようにする、1つ以上のエネルギー効率が高く、信頼できるナノワイヤ発光スイッチデバイスを提供することを含むいくつかの優位点を提供する。
Claims (30)
- 基板と、
前記基板の表面から軸に沿って延びる少なくとも1つのナノワイヤ構造と
を備える、ナノワイヤシステムであって、
前記ナノワイヤ構造は、
発光ダイオードと、
前記発光ダイオードの動作状態を制御するために電気的に結合されたデバイスドライバと
を備え、
前記発光ダイオード及び前記デバイスドライバは、少なくとも1つのドープ領域をそれぞれ共有するように統合されている、
前記ナノワイヤシステム。 - 前記共有された少なくとも1つのドープ領域が、前記発光ダイオードの陰極領域と前記デバイスドライバのドレイン領域とを含むGaN層を備える、請求項1に記載のシステム。
- 前記発光ダイオードが、前記陰極領域を含む前記GaN層に電気的に結合された陽極領域をさらに備え、前記デバイスドライバが、ソース領域と前記ドレイン領域を含む前記GaN層との間で電気的に結合されたチャネル領域を備える、請求項2に記載のシステム。
- 前記ソース領域及び前記チャネル領域が、それぞれ別のGaN層を備える、請求項3に記載のシステム。
- 前記発光ダイオードの前記陰極領域及び前記デバイスドライバの前記ドレイン領域が、共通の外部接続性を共有する、請求項2に記載のシステム。
- 前記デバイスドライバの前記チャネル領域の周縁部の少なくとも一部分に電気的に結合されたゲート金属層をさらに備える、請求項3に記載のシステム。
- 前記少なくとも1つのナノワイヤ構造が2つ以上のナノワイヤ構造を備え、前記デバイスドライバのそれぞれのソース領域が共有ソース領域である、請求項1に記載のシステム。
- 2つ以上のナノワイヤ構造のチャネル領域と電気的に結合されたゲート金属層をさらに備える、請求項7に記載のシステム。
- 複数の隣接するナノワイヤ構造を共に電気的に結合する透明導電フィルム層をさらに備える、請求項8に記載のシステム。
- 前記複数の隣接するナノワイヤ構造が、前記透明導電フィルム層と前記ゲート金属層の両方によって電気的に結合されている、請求項9に記載のシステム。
- 前記少なくとも1つのナノワイヤ構造の最大断面寸法が約10ミクロン未満である、請求項1に記載のシステム。
- 前記少なくとも1つのナノワイヤ構造の最大断面寸法が約3ミクロン未満である、請求項1に記載のシステム。
- Ni系金属ドレイン接点と、ソース領域に隣接し電気的に接続されたTi系金属層とをさらに備える、請求項1に記載のシステム。
- 前記発光ダイオードが、前記LEDの発光部分の上に、スペクトル発光を改変する材料の1つ以上の層をさらに備える、請求項1に記載のシステム。
- 前記1つ以上の層が色コンバータを備える、請求項14に記載のシステム。
- 基板を提供する工程と、
前記基板の表面から軸に沿って延びる少なくとも1つのナノワイヤ構造を形成する工程と
を含む、ナノワイヤシステムを製造する方法であって、
前記ナノワイヤ構造は、
発光ダイオードと、
前記発光ダイオードの動作状態を制御するために電気的に結合されたデバイスドライバと
を備え、
前記発光ダイオード及び前記デバイスドライバは、少なくとも1つのドープ領域をそれぞれ共有するように統合される、
前記方法。 - 前記共有された少なくとも1つのドープ領域が、前記発光ダイオードの陰極領域と前記デバイスドライバのドレイン領域とを含むGaN層を備える、請求項16に記載の方法。
- 前記発光ダイオードが、前記陰極領域を含む前記GaN層に電気的に結合された陽極領域をさらに備え、前記デバイスドライバが、ソース領域と前記ドレイン領域を含む前記GaN層との間で電気的に結合されたチャネル領域を備える、請求項17に記載の方法。
- 前記ソース領域及び前記チャネル領域が、それぞれ別のGaN層を備える、請求項18に記載の方法。
- 前記発光ダイオードの前記陰極領域及び前記デバイスドライバの前記ドレイン領域が、共通の外部接続性を共有する、請求項17に記載の方法。
- 前記デバイスドライバの前記チャネル領域の周縁部の少なくとも一部分に電気的に結合されたゲート金属層を形成する工程をさらに含む、請求項18に記載の方法。
- 前記少なくとも1つのナノワイヤ構造を形成する前記工程が、前記ナノワイヤ構造の2つ以上を形成することをさらに含み、前記デバイスドライバのそれぞれのソース領域が共有ソース領域である、請求項16に記載の方法。
- 2つ以上のナノワイヤ構造のチャネル領域と電気的に結合されたゲート金属層を形成する工程をさらに含む、請求項22に記載の方法。
- 複数のナノワイヤ構造を共に電気的に結合する透明導電フィルム層を形成する工程をさらに含む、請求項23に記載のシステム。
- 前記複数の隣接するナノワイヤ構造が、前記透明導電フィルム層及び前記ゲート金属層の両方によって電気的に結合される、請求項24に記載の方法。
- 前記少なくとも1つのナノワイヤ構造の最大断面寸法が約10ミクロン未満である、請求項16に記載の方法。
- 前記少なくとも1つのナノワイヤ構造の最大断面寸法が約3ミクロン未満である、請求項16に記載の方法。
- Ni系金属ドレイン接点と、ソース領域に隣接し電気的に接続されたTi系金属層とを形成する工程をさらに含む、請求項16に記載の方法。
- 前記LEDの発光部分の上に、スペクトル発光を改変する材料の1つ以上の層を形成する工程をさらに含む、請求項16に記載の方法。
- 前記1つ以上の層が色コンバータを備える、請求項30に記載の方法。
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