JP2021519514A5 - - Google Patents

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Publication number
JP2021519514A5
JP2021519514A5 JP2020551853A JP2020551853A JP2021519514A5 JP 2021519514 A5 JP2021519514 A5 JP 2021519514A5 JP 2020551853 A JP2020551853 A JP 2020551853A JP 2020551853 A JP2020551853 A JP 2020551853A JP 2021519514 A5 JP2021519514 A5 JP 2021519514A5
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JP
Japan
Prior art keywords
carbon
containing reactant
aluminum
semiconductor substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2020551853A
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English (en)
Japanese (ja)
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JP2021519514A (ja
JP7396998B2 (ja
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Priority claimed from PCT/US2019/022568 external-priority patent/WO2019190783A1/en
Publication of JP2021519514A publication Critical patent/JP2021519514A/ja
Publication of JP2021519514A5 publication Critical patent/JP2021519514A5/ja
Application granted granted Critical
Publication of JP7396998B2 publication Critical patent/JP7396998B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2020551853A 2018-03-26 2019-03-15 炭素膜の原子層堆積 Active JP7396998B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862647993P 2018-03-26 2018-03-26
US62/647,993 2018-03-26
PCT/US2019/022568 WO2019190783A1 (en) 2018-03-26 2019-03-15 Atomic layer deposition of carbon films

Publications (3)

Publication Number Publication Date
JP2021519514A JP2021519514A (ja) 2021-08-10
JP2021519514A5 true JP2021519514A5 (enExample) 2022-03-24
JP7396998B2 JP7396998B2 (ja) 2023-12-12

Family

ID=68060319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020551853A Active JP7396998B2 (ja) 2018-03-26 2019-03-15 炭素膜の原子層堆積

Country Status (4)

Country Link
JP (1) JP7396998B2 (enExample)
KR (2) KR102712239B1 (enExample)
CN (2) CN112005339B (enExample)
WO (1) WO2019190783A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10607852B2 (en) * 2017-09-13 2020-03-31 Tokyo Electron Limited Selective nitride etching method for self-aligned multiple patterning
JP7623082B2 (ja) * 2021-02-04 2025-01-28 東京エレクトロン株式会社 カーボン膜の成膜方法及び成膜装置
US20230058831A1 (en) * 2021-08-20 2023-02-23 Applied Materials, Inc. Molecular layer deposition liner for 3d nand
US11756785B2 (en) * 2021-08-20 2023-09-12 Applied Materials, Inc. Molecular layer deposition contact landing protection for 3D NAND
CN120303774A (zh) * 2022-11-30 2025-07-11 朗姆研究公司 金属掺杂碳非保形沉积
KR20250173679A (ko) * 2024-06-04 2025-12-11 주성엔지니어링(주) 탄소층 형성 방법 및 그를 이용한 기판 처리 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04143921A (ja) * 1990-10-05 1992-05-18 Mitsubishi Electric Corp 磁気ディスクおよびその製造方法
FI118014B (fi) * 2000-10-23 2007-05-31 Asm Int Menetelmä alumiinioksidiohutkalvojen valmistamiseksi matalissa lämpötiloissa
US7198820B2 (en) * 2003-02-06 2007-04-03 Planar Systems, Inc. Deposition of carbon- and transition metal-containing thin films
WO2008108754A1 (en) * 2007-03-06 2008-09-12 Varian Semiconductor Equipment Associates, Inc. Technique for atomic layer deposition
US7666474B2 (en) * 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
JP2010041038A (ja) * 2008-06-27 2010-02-18 Asm America Inc 重要な用途のための二酸化ケイ素の低温熱でのａｌｄ
JP4638550B2 (ja) * 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
US8993460B2 (en) * 2013-01-10 2015-03-31 Novellus Systems, Inc. Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
WO2014097280A1 (en) * 2012-12-21 2014-06-26 Prasad Narhar Gadgil Methods of low temperature deposition of ceramic thin films
US9721784B2 (en) * 2013-03-15 2017-08-01 Applied Materials, Inc. Ultra-conformal carbon film deposition
US9605343B2 (en) * 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
US9624577B2 (en) * 2014-07-22 2017-04-18 Applied Materials, Inc. Deposition of metal doped amorphous carbon film
US9443956B2 (en) * 2014-12-08 2016-09-13 Globalfoundries Inc. Method for forming air gap structure using carbon-containing spacer

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