JP2021510235A - 入出力回路が内蔵された電力増幅器用パッケージの製造方法 - Google Patents
入出力回路が内蔵された電力増幅器用パッケージの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 18
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims abstract description 7
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims abstract description 4
- 238000007639 printing Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910000914 Mn alloy Inorganic materials 0.000 claims description 3
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000005275 alloying Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract
Description
定されるものではない。
Claims (5)
- 誘電体回路基板、ヒートシンク、及びリードフレームを含む入出力回路が内蔵された電力増幅器用パッケージの製造方法において、
誘電体基板に電力増幅器チップが配置される電力増幅器孔を形成する段階と、前記電力増幅器孔の左側に入力マッチングネットワーク金属パターンを印刷し、前記電力増幅器孔の右側に出力マッチングネットワーク金属パターンを印刷する段階と、前記誘電体基板に印刷された入力マッチングネットワーク金属パターン及び出力マッチングネットワーク金属パターンを焼結する段階と、で構成される誘電体回路基板を準備する段階と、
合金(alloy)42をエッチングし、ニッケルでメッキしてリードフレームを準備する段階と、
前記誘電体回路基板の下面に前記ヒートシンクを取り付け、前記誘電体回路基板の入力マッチングネットワーク金属パターン及び出力マッチングネットワーク金属パターンに前記リードフレームを取り付けた後、前記誘電体回路基板の入力マッチングネットワーク金属パターンと出力マッチングネットワーク金属パターン、及び前記リードフレームをニッケル/金でメッキする段階と、を含む入出力回路が内蔵された電力増幅器用パッケージの製造方法。 - 前記誘電体回路基板を準備する段階において、前記誘電体基板は、アルミナ(Al2O3)セラミック基板であることを特徴とする請求項1に記載の入出力回路が内蔵された電力増幅器用パッケージの製造方法。
- 前記誘電体回路基板を準備する段階において、前記入力マッチングネットワーク金属パターン及び前記出力マッチングネットワーク金属パターンは、タングステン(W)またはモリブデンマンガン合金(MoMn)で印刷されることを特徴とする請求項1に記載の入出力回路が内蔵された電力増幅器用パッケージの製造方法。
- 前記誘電体回路基板を準備する段階において、前記誘電体基板に印刷された入力マッチングネットワーク金属パターン及び出力マッチングネットワーク金属パターンを、電気炉において1250℃〜1500℃で焼結することを特徴とする請求項1に記載の入出力回路が内蔵された電力増幅器用パッケージの製造方法。
- 前記誘電体回路基板を準備する段階において、前記入力マッチングネットワーク金属パターン及び出力マッチングネットワーク金属パターンを印刷した後、前記入力マッチングネットワーク金属パターン及び出力マッチングネットワーク金属パターンをニッケル/パラジウム/金で表面処理することを特徴とする請求項1に記載の入出力回路が内蔵された電力増幅器用パッケージの製造方法。
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PCT/KR2018/014926 WO2020111321A1 (ko) | 2018-11-29 | 2018-11-29 | 입출력회로가 내장된 전력 증폭기용 패키지의 제조 방법 |
KR1020180150331A KR102129556B1 (ko) | 2018-11-29 | 2018-11-29 | 입출력회로가 내장된 전력 증폭기용 패키지의 제조 방법 |
KR10-2018-0150331 | 2018-11-29 |
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JP2021510235A true JP2021510235A (ja) | 2021-04-15 |
JP7102525B2 JP7102525B2 (ja) | 2022-07-19 |
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JP (1) | JP7102525B2 (ja) |
KR (1) | KR102129556B1 (ja) |
WO (1) | WO2020111321A1 (ja) |
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CN113015349A (zh) * | 2021-03-01 | 2021-06-22 | 哈尔滨工业大学 | 内置输入输出电路的功率放大器的封装制造方法 |
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US11264251B2 (en) | 2022-03-01 |
KR20200064324A (ko) | 2020-06-08 |
KR102129556B1 (ko) | 2020-07-02 |
US20210013050A1 (en) | 2021-01-14 |
WO2020111321A1 (ko) | 2020-06-04 |
JP7102525B2 (ja) | 2022-07-19 |
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