JP2021184412A5 - - Google Patents

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Publication number
JP2021184412A5
JP2021184412A5 JP2020088784A JP2020088784A JP2021184412A5 JP 2021184412 A5 JP2021184412 A5 JP 2021184412A5 JP 2020088784 A JP2020088784 A JP 2020088784A JP 2020088784 A JP2020088784 A JP 2020088784A JP 2021184412 A5 JP2021184412 A5 JP 2021184412A5
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JP
Japan
Prior art keywords
region
electrode
semiconductor
partial
silicon carbide
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JP2020088784A
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English (en)
Japanese (ja)
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JP7319617B2 (ja
JP2021184412A (ja
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Priority to JP2020088784A priority Critical patent/JP7319617B2/ja
Priority claimed from JP2020088784A external-priority patent/JP7319617B2/ja
Priority to US17/158,110 priority patent/US11424326B2/en
Publication of JP2021184412A publication Critical patent/JP2021184412A/ja
Publication of JP2021184412A5 publication Critical patent/JP2021184412A5/ja
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Publication of JP7319617B2 publication Critical patent/JP7319617B2/ja
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JP2020088784A 2020-05-21 2020-05-21 半導体装置 Active JP7319617B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020088784A JP7319617B2 (ja) 2020-05-21 2020-05-21 半導体装置
US17/158,110 US11424326B2 (en) 2020-05-21 2021-01-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020088784A JP7319617B2 (ja) 2020-05-21 2020-05-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2021184412A JP2021184412A (ja) 2021-12-02
JP2021184412A5 true JP2021184412A5 (enExample) 2022-04-14
JP7319617B2 JP7319617B2 (ja) 2023-08-02

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ID=78608368

Family Applications (1)

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JP2020088784A Active JP7319617B2 (ja) 2020-05-21 2020-05-21 半導体装置

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US (1) US11424326B2 (enExample)
JP (1) JP7319617B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023228473A1 (ja) * 2022-05-25 2023-11-30 住友電気工業株式会社 炭化珪素半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4631833B2 (ja) 2006-09-04 2011-02-16 ソニー株式会社 半導体装置
JP5045686B2 (ja) 2009-01-26 2012-10-10 ソニー株式会社 半導体装置の製造方法
JP5367429B2 (ja) 2009-03-25 2013-12-11 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
US9006747B2 (en) 2011-08-26 2015-04-14 National University Corporation NARA Institute of Science and Technology SiC semiconductor element and manufacturing method thereof
JP2013157577A (ja) 2012-02-01 2013-08-15 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
JP6183224B2 (ja) 2014-01-16 2017-08-23 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9893176B2 (en) * 2014-12-26 2018-02-13 Fairchild Semiconductor Corporation Silicon-carbide trench gate MOSFETs
JP6950398B2 (ja) 2017-09-21 2021-10-13 住友電気工業株式会社 炭化珪素半導体装置
JP2019050434A (ja) 2019-01-04 2019-03-28 株式会社東芝 半導体装置
JP7354029B2 (ja) * 2020-03-13 2023-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、電源回路、及び、コンピュータ

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