JP7319617B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7319617B2
JP7319617B2 JP2020088784A JP2020088784A JP7319617B2 JP 7319617 B2 JP7319617 B2 JP 7319617B2 JP 2020088784 A JP2020088784 A JP 2020088784A JP 2020088784 A JP2020088784 A JP 2020088784A JP 7319617 B2 JP7319617 B2 JP 7319617B2
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Japan
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region
silicon carbide
semiconductor
electrode
partial
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JP2020088784A
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English (en)
Japanese (ja)
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JP2021184412A (ja
JP2021184412A5 (enExample
Inventor
幸雄 中林
達雄 清水
俊秀 伊藤
千春 太田
譲司 西尾
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Toshiba Corp
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Toshiba Corp
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Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2020088784A priority Critical patent/JP7319617B2/ja
Priority to US17/158,110 priority patent/US11424326B2/en
Publication of JP2021184412A publication Critical patent/JP2021184412A/ja
Publication of JP2021184412A5 publication Critical patent/JP2021184412A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Electrodes Of Semiconductors (AREA)
JP2020088784A 2020-05-21 2020-05-21 半導体装置 Active JP7319617B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020088784A JP7319617B2 (ja) 2020-05-21 2020-05-21 半導体装置
US17/158,110 US11424326B2 (en) 2020-05-21 2021-01-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020088784A JP7319617B2 (ja) 2020-05-21 2020-05-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2021184412A JP2021184412A (ja) 2021-12-02
JP2021184412A5 JP2021184412A5 (enExample) 2022-04-14
JP7319617B2 true JP7319617B2 (ja) 2023-08-02

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ID=78608368

Family Applications (1)

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JP2020088784A Active JP7319617B2 (ja) 2020-05-21 2020-05-21 半導体装置

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US (1) US11424326B2 (enExample)
JP (1) JP7319617B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112023002435T5 (de) * 2022-05-25 2025-03-20 Sumitomo Electric Industries, Ltd. Siliziumkarbid-Halbleitervorrichtung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013031172A1 (ja) 2011-08-26 2013-03-07 国立大学法人奈良先端科学技術大学院大学 ＳｉＣ半導体素子およびその製造方法
JP2015135862A (ja) 2014-01-16 2015-07-27 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2019050434A (ja) 2019-01-04 2019-03-28 株式会社東芝 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4631833B2 (ja) 2006-09-04 2011-02-16 ソニー株式会社 半導体装置
JP5045686B2 (ja) 2009-01-26 2012-10-10 ソニー株式会社 半導体装置の製造方法
JP5367429B2 (ja) 2009-03-25 2013-12-11 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP2013157577A (ja) 2012-02-01 2013-08-15 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
US9893176B2 (en) * 2014-12-26 2018-02-13 Fairchild Semiconductor Corporation Silicon-carbide trench gate MOSFETs
JP6950398B2 (ja) 2017-09-21 2021-10-13 住友電気工業株式会社 炭化珪素半導体装置
JP7354029B2 (ja) * 2020-03-13 2023-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、電源回路、及び、コンピュータ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013031172A1 (ja) 2011-08-26 2013-03-07 国立大学法人奈良先端科学技術大学院大学 ＳｉＣ半導体素子およびその製造方法
JP2015135862A (ja) 2014-01-16 2015-07-27 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2019050434A (ja) 2019-01-04 2019-03-28 株式会社東芝 半導体装置

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Publication number Publication date
JP2021184412A (ja) 2021-12-02
US20210367040A1 (en) 2021-11-25
US11424326B2 (en) 2022-08-23

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