JP2021179619A - 表示装置及び電子機器 - Google Patents
表示装置及び電子機器 Download PDFInfo
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- JP2021179619A JP2021179619A JP2021112151A JP2021112151A JP2021179619A JP 2021179619 A JP2021179619 A JP 2021179619A JP 2021112151 A JP2021112151 A JP 2021112151A JP 2021112151 A JP2021112151 A JP 2021112151A JP 2021179619 A JP2021179619 A JP 2021179619A
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- light emitting
- pixel
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- transistor
- display device
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- G—PHYSICS
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Abstract
Description
1.表示装置の全体構成
2.画素回路の構成
3.画素回路の動作
4.画素回路のレイアウト
4−1.一般的なレイアウト
4−2.本実施形態に係るレイアウト
5.表示装置の具体的な構成例
6.適用例
7.補足
図1及び図2を参照して、本開示の一実施形態に係る表示装置の全体構成について説明する。図1は、本実施形態に係る表示装置の全体構成を示す概略図である。図2は、図1に示す画素部、走査部及び選択部の構成をより詳細に示す概略図である。
図3を参照して、図2に示す画素回路210の構成について説明する。図3は、図2に示す画素回路210の構成を示す概略図である。図3では、図2に示す複数の画素回路210のうちの1つの画素回路210の回路構成を示すとともに、当該画素回路210に対する、走査線302、第1駆動線312、第2駆動線322及び信号線402の接続状態を示している。
以上説明した画素回路210の動作について説明する。図4は、本実施形態に係る画素回路210の動作について説明するための図である。図4では、画素回路210の動作に係る各信号のタイミング波形図を示している。具体的には、図4では、1水平期間(1H期間)における、信号線402の電位(信号線電圧Date)、走査線302の電位(走査線電圧WS)、第1駆動線312の電位(第1駆動線電圧DS)、第2駆動線322の電位(第2駆動線電圧AZ)、駆動トランジスタ212のソース電位Vs、及び駆動トランジスタ212のゲート電位Vgの変化の様子をそれぞれ示している。
以上説明した本実施形態に係る画素回路210の各トランジスタが形成される層である拡散層のレイアウトについて説明する。ここでは、本実施形態に係るレイアウトによって得られる効果をより明確なものとするために、まず、一般的な既存のレイアウトについて説明する。
本実施形態に係る画素回路210の拡散層を一般的なレイアウトで構成した場合について検討する。図5は、本実施形態に係る画素回路210の拡散層を一般的なレイアウトで構成した場合における、当該レイアウトの一例を概略的に示す上面図である。実際には、表示装置1の画素部20には、複数の副画素(すなわち、画素回路210)が行列状に並べられて配置されるが、図5では、説明のため、隣り合う3つの副画素(PIX_A、PIX_B、PIX_C)に対応する画素回路210のレイアウトを図示している。
本実施形態では、以上説明した一般的なレイアウトにおいて生じ得る不都合を、レイアウトを工夫することによって解消し得る。図7を参照して、本実施形態に係る画素回路210の拡散層のレイアウトについて説明する。図7は、本実施形態に係る画素回路210の拡散層のレイアウトの一例を概略的に示す上面図である。
以上説明した本実施形態に係る表示装置1の、より具体的な構成例について説明する。図9は、本実施形態に係る表示装置1の具体的な一構成例を示す断面図である。図9では、表示装置1の一部断面図を示している。
図示する構成例では、第1基板11はシリコン基板から構成される。また、第2基板34は石英ガラスから構成される。ただし、本実施形態はかかる例に限定されず、第1基板11及び第2基板34としては、各種の公知の材料が用いられてよい。例えば、第1基板11及び第2基板34は、高歪点ガラス基板、ソーダガラス(Na2O、CaO及びSiO2の混合物)基板、硼珪酸ガラス(Na2O、B2O3及びSiO2の混合物)基板、フォルステライト(Mg2SiO4)基板、鉛ガラス(Na2O、PbO及びSiO2の混合物)基板、表面に絶縁膜が形成された各種ガラス基板、石英基板、表面に絶縁膜が形成された石英基板、表面に絶縁膜が形成されたシリコン基板、又は有機ポリマー基板(例えば、ポリメチルメタクリレート(ポリメタクリル酸メチル:PMMA)、ポリビニルアルコール(PVA)、ポリビニルフェノール(PVP)、ポリエーテルスルホン(PES)、ポリイミド、ポリカーボネート、若しくはポリエチレンテレフタレート(PET)等)によって形成され得る。第1基板11と第2基板34を構成する材料は、同じであってもよいし、異なっていてもよい。ただし、上述したように表示装置1は上面発光型であるから、第2基板34は、有機発光ダイオード211からの光を好適に透過し得る、透過率の高い材料によって形成されることが好ましい。
有機発光ダイオード211は、第1電極21と、第1電極21の上に設けられる有機層23と、有機層23上に形成される第2電極22と、を有する。より具体的には、第1電極21の上に、当該第1電極21の少なくとも一部を露出するように開口部25が設けられる第2部材52が積層されており、有機層23は、当該開口部25の底部において露出した第1電極21の上に設けられる。つまり、有機発光ダイオード211は、第2部材52の開口部25において、第1電極21、有機層23及び第2電極22がこの順に積層された構成を有する。この積層構造が各画素の発光部24として機能する。つまり、有機発光ダイオード211の、第2部材52の開口部25に当たる部分が発光面となる。また、第2部材52は、画素間に設けられ画素の面積を画定する画素定義膜として機能する。
第1基板11において、有機発光ダイオード211を構成する第1電極21は、SiONからなる層間絶縁層16上に設けられている。そして、この層間絶縁層16は、第1基板11上に形成された発光素子駆動部を覆っている。
有機発光ダイオード211の第2部材52に設けられる開口部25は、その側壁が、下方に向かうにつれて開口面積が増加するように傾斜したテーパ形状を有するように形成される。そして、当該開口部25に第1部材51が埋め込まれる。つまり、第1部材51は、有機発光ダイオード211の発光面の直上に設けられる、発光素子からの出射光を上方に向かって伝播する層である。また、第2部材52の開口部25を上記のように形成することにより、第1部材51は、その積層方向における断面形状(すなわち、図示する断面形状)が略台形を有し、上方に底面を向けた切頭錐体形状を有する。
以上説明した本実施形態に係る表示装置1の適用例について説明する。ここでは、以上説明した本実施形態に係る表示装置1が適用され得る電子機器のいくつかの例について説明する。
以上、添付図面を参照しながら本開示の好適な実施形態について詳細に説明したが、本開示の技術的範囲はかかる例に限定されない。本開示の技術分野における通常の知識を有する者であれば、特許請求の範囲に記載された技術的思想の範疇内において、各種の変更例または修正例に想到し得ることは明らかであり、これらについても、当然に本開示の技術的範囲に属するものと了解される。
(1)
発光素子及び当該発光素子を駆動するための駆動回路から構成される画素回路が行列状に複数並べられて構成される画素部、を備え、
前記画素回路の前記駆動回路を構成するトランジスタが形成される拡散層において、ウェルに電位を供給するためのアクティブ領域である給電領域が、互いに隣接する前記画素回路間に設けられる、
表示装置。
(2)
前記給電領域は、互いに隣接する前記画素回路間において、少なくとも寄生容量を生じさせるアクティブ領域間に設けられる、
前記(1)に記載の表示装置。
(3)
前記給電領域は、前記各画素回路内に少なくとも1つずつ設けられる、
前記(1)又は(2)に記載の表示装置。
(4)
前記給電領域は、互いに隣接する前記画素回路間の境界に沿って設けられる、
前記(1)〜(3)のいずれか1項に記載の表示装置。
(5)
前記給電領域は、前記各画素回路を囲むように設けられる、
前記(1)〜(3)のいずれか1項に記載の表示装置。
(6)
前記給電領域は、前記各画素回路内に複数設けられる、
前記(1)〜(5)のいずれか1項に記載の表示装置。
(7)
前記発光素子は有機発光ダイオードである、
前記(1)〜(6)のいずれか1項に記載の表示装置。
(8)
映像信号に基づいて表示を行う表示装置、
を備え、
前記表示装置は、発光素子及び当該発光素子を駆動するための駆動回路から構成される画素回路が行列状に複数並べられて構成される画素部、を有し、
前記画素回路の前記駆動回路を構成するトランジスタが形成される拡散層において、ウェルに電位を供給するためのアクティブ領域である給電領域が、互いに隣接する前記画素回路間に設けられる、
電子機器。
10 表示パネル
20 画素部
30 走査部
40 選択部
210 画素回路
211 有機発光ダイオード
212 駆動トランジスタ
213 サンプリングトランジスタ
214 発光制御トランジスタ
215 保持容量
216 補助容量
217 スイッチングトランジスタ
221 アノード領域
222 ゲート領域
223 給電領域
301 書き込み走査部
302 走査線
311 第1駆動走査部
312 第1駆動線
321 第2駆動走査部
322 第2駆動線
331 共通電源線
332 電源線
333 グランド線
401 信号出力部
402 信号線
501 スマートフォン(電子機器)
511 デジタルカメラ(電子機器)
531 HMD(電子機器)
Claims (1)
- 発光素子及び当該発光素子を駆動するための駆動回路から構成される画素回路が行列状に複数並べられて構成される画素部、を備え、
前記画素回路の前記駆動回路を構成するトランジスタが形成される拡散層において、ウェルに電位を供給するためのアクティブ領域である給電領域が、互いに隣接する前記画素回路間に設けられる、
表示装置。
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