JP2021174813A - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
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- JP2021174813A JP2021174813A JP2020075319A JP2020075319A JP2021174813A JP 2021174813 A JP2021174813 A JP 2021174813A JP 2020075319 A JP2020075319 A JP 2020075319A JP 2020075319 A JP2020075319 A JP 2020075319A JP 2021174813 A JP2021174813 A JP 2021174813A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Abstract
Description
Claims (11)
- n型不純物を含む第1n型窒化物半導体層を形成する工程と、
前記第1n型窒化物半導体層の上に、第1発光層を形成する工程と、
炉内にガリウムを含む第1流量のガスと、窒素を含むガスとを導入し、前記第1発光層の上に、アンドープの第1窒化物半導体層を形成する工程と、
前記第1窒化物半導体層の上に、第1p型窒化物半導体層を形成する工程と、
前記第1p型窒化物半導体層の上に、n型不純物を含み、前記第1n型窒化物半導体層よりも高い不純物濃度を有する窒化物半導体層からなるn型中間層を形成する工程と、
前記n型中間層の上に、第2n型窒化物半導体層を形成する工程と、
前記第2n型窒化物半導体層の上に、第2発光層を形成する工程と、
前記炉内にガリウムを含む第2流量のガスと、窒素を含むガスとを導入し、前記第2発光層の上に、アンドープの第2窒化物半導体層を形成する工程と、
前記第2窒化物半導体層の上に、第2p型窒化物半導体層を形成する工程と、
を備え、
前記第1流量は、前記第2流量よりも少ない発光素子の製造方法。 - 前記第1流量は、前記第2流量の0.125倍以上0.5倍以下である請求項1記載の発光素子の製造方法。
- 前記第1p型窒化物半導体層は、p型不純物としてマグネシウムを含み、
前記第1p型窒化物半導体層の不純物濃度は、5×1019/cm3以上2×1021/cm3以下である請求項1又は2に記載の発光素子の製造方法。 - 前記n型中間層は、n型不純物としてシリコンを含み、
前記n型中間層の不純物濃度は、1×1020/cm3以上5×1021/cm3以下である請求項1〜3のいずれか1つに記載の発光素子の製造方法。 - 前記第1発光層を形成する工程において、前記炉内にガリウムを含む第3流量のガスと、窒素を含むガスとを導入し、
前記第2発光層を形成する工程において、前記炉内にガリウムを含む第4流量のガスと、窒素を含むガスとを導入し、
前記第3流量は、前記第4流量と同じである請求項1〜4のいずれか1つに記載の発光素子の製造方法。 - 前記第1p型窒化物半導体層を形成する工程において、前記第1窒化物半導体層に接して前記第1p型窒化物半導体層を形成する請求項1〜5のいずれか1つに記載の発光素子の製造方法。
- 前記第1窒化物半導体層及び前記第2窒化物半導体層は、窒化ガリウムからなる請求項1〜6のいずれか1つに記載の発光素子の製造方法。
- 前記第1窒化物半導体層を形成するときに前記炉内に導入される前記ガリウムを含むガス、および前記第2窒化物半導体層を形成するときに前記炉内に導入される前記ガリウムを含むガスは、トリメチルガリウムガスまたはトリエチルガリウムガスである請求項1〜7のいずれか1つに記載の発光素子の製造方法。
- 前記第1窒化物半導体層及び前記第2窒化物半導体層の膜厚は、50nm以上100nm以下である請求項1〜8のいずれか1つに記載の発光素子の製造方法。
- 前記第1発光層を形成する工程の後、前記第1発光層上に第1pクラッド層を形成する工程をさらに有し、
前記第1窒化物半導体層を形成する工程において、前記第1pクラッド層に接して前記第1窒化物半導体層を形成する請求項1〜9のいずれか1つに記載の発光素子の製造方法。 - 前記第2発光層を形成する工程の後、前記第2発光層上に第2pクラッド層を形成する工程をさらに有し、
前記第2窒化物半導体層を形成する工程において、前記第2pクラッド層に接して前記第2窒化物半導体層を形成する請求項1〜10のいずれか1つに記載の発光素子の製造方法。
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