JP2021150587A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2021150587A JP2021150587A JP2020051131A JP2020051131A JP2021150587A JP 2021150587 A JP2021150587 A JP 2021150587A JP 2020051131 A JP2020051131 A JP 2020051131A JP 2020051131 A JP2020051131 A JP 2020051131A JP 2021150587 A JP2021150587 A JP 2021150587A
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- Prior art keywords
- semiconductor device
- interlayer film
- polysilicon layer
- barrier metal
- electrode
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 239000011229 interlayer Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 229920005591 polysilicon Polymers 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 29
- 230000007717 exclusion Effects 0.000 description 5
- 239000000470 constituent Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
Description
図1は、実施の形態1に係る半導体装置を示す断面図である。半導体基板1はp型であり、半導体基板1の表層にn型のソース領域2及びドレイン領域3が互いに離間して設けられている。ソース領域2とドレイン領域3の間の半導体基板1の上にゲート絶縁膜4を介してゲート電極5が形成されている。ゲート電極5は層間膜7で覆われている。層間膜7は酸化膜であり、例えばTEOS/BPSG/TEOSの積層構造である。
図3は、実施の形態2に係る半導体装置のボンディング領域における層間膜のパターンを示す平面図である。層間膜7は、半導体基板1の主面に対して垂直な平面視でメッシュ状のパターンを有する。メッシュの開口の縦横の幅をX、メッシュの開口の間隔をYとすると、X,Y共に2um〜5umである。その他の構成は実施の形態1と同様である。
Claims (6)
- ワイヤとのボンディング領域を備える半導体装置であって、
半導体基板と、
前記ボンディング領域において前記半導体基板の主面に設けられた酸化膜と、
前記酸化膜の上に設けられたポリシリコン層と、
前記ポリシリコン層の上に部分的に設けられた層間膜と、
前記ポリシリコン層と前記層間膜の上に直接的に設けられたバリアメタルと、
前記バリアメタルの上に設けられた電極とを備えることを特徴とする半導体装置。 - 前記半導体基板に設けられ、ゲート電極を有するトランジスタを更に備え、
前記ポリシリコン層と前記ゲート電極は同じ材質からなることを特徴とする請求項1に記載の半導体装置。 - 前記電極の表面は前記層間膜のパターンに合わせて凹凸形状になっていることを特徴とする請求項1又は2に記載の半導体装置。
- 前記層間膜は、前記主面に対して垂直な平面視でドット状のパターンを有することを特徴とする請求項3に記載の半導体装置。
- 前記層間膜は、前記主面に対して垂直な平面視でメッシュ状のパターンを有することを特徴とする請求項3に記載の半導体装置。
- 前記半導体基板はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜5の何れか1項に記載の半導体装置。
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JP2020051131A JP7367580B2 (ja) | 2020-03-23 | 2020-03-23 | 半導体装置 |
US17/070,617 US11410946B2 (en) | 2020-03-23 | 2020-10-14 | Semiconductor apparatus |
DE102020133695.0A DE102020133695A1 (de) | 2020-03-23 | 2020-12-16 | Halbleitereinrichtung |
CN202110291207.9A CN113437139B (zh) | 2020-03-23 | 2021-03-18 | 半导体装置 |
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JPH04180227A (ja) * | 1990-11-15 | 1992-06-26 | Toshiba Corp | 半導体装置 |
JPH04258145A (ja) * | 1991-02-13 | 1992-09-14 | Toshiba Corp | 半導体装置 |
JPH065653A (ja) * | 1992-06-24 | 1994-01-14 | Toshiba Corp | 半導体装置 |
JP2002164381A (ja) * | 2000-11-28 | 2002-06-07 | Sony Corp | 半導体装置及びその製造方法 |
US20030166334A1 (en) * | 2002-02-14 | 2003-09-04 | Ming-Yu Lin | Bond pad and process for fabricating the same |
US9761548B1 (en) * | 2016-05-19 | 2017-09-12 | Infineon Technologies Ag | Bond pad structure |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH08203952A (ja) | 1995-01-25 | 1996-08-09 | Nippon Precision Circuits Kk | 半導体装置 |
TW332336B (en) | 1997-09-15 | 1998-05-21 | Winbond Electruction Company | Anti-peeling bonding pad structure |
KR100550505B1 (ko) * | 2001-03-01 | 2006-02-13 | 가부시끼가이샤 도시바 | 반도체 장치 및 반도체 장치의 제조 방법 |
JP2012109419A (ja) | 2010-11-18 | 2012-06-07 | Panasonic Corp | 半導体装置 |
JP2017130527A (ja) * | 2016-01-19 | 2017-07-27 | 力祥半導體股▲フン▼有限公司UBIQ Semiconductor Corp. | 半導体装置 |
JP6959899B2 (ja) | 2018-09-27 | 2021-11-05 | 日立建機株式会社 | ホイールローダ |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04180227A (ja) * | 1990-11-15 | 1992-06-26 | Toshiba Corp | 半導体装置 |
JPH04258145A (ja) * | 1991-02-13 | 1992-09-14 | Toshiba Corp | 半導体装置 |
JPH065653A (ja) * | 1992-06-24 | 1994-01-14 | Toshiba Corp | 半導体装置 |
JP2002164381A (ja) * | 2000-11-28 | 2002-06-07 | Sony Corp | 半導体装置及びその製造方法 |
US20030166334A1 (en) * | 2002-02-14 | 2003-09-04 | Ming-Yu Lin | Bond pad and process for fabricating the same |
US9761548B1 (en) * | 2016-05-19 | 2017-09-12 | Infineon Technologies Ag | Bond pad structure |
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CN113437139B (zh) | 2024-07-19 |
DE102020133695A1 (de) | 2021-09-23 |
CN113437139A (zh) | 2021-09-24 |
JP7367580B2 (ja) | 2023-10-24 |
US11410946B2 (en) | 2022-08-09 |
US20210296462A1 (en) | 2021-09-23 |
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