JP6111907B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6111907B2 JP6111907B2 JP2013141890A JP2013141890A JP6111907B2 JP 6111907 B2 JP6111907 B2 JP 6111907B2 JP 2013141890 A JP2013141890 A JP 2013141890A JP 2013141890 A JP2013141890 A JP 2013141890A JP 6111907 B2 JP6111907 B2 JP 6111907B2
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- protective layer
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- 239000004065 semiconductor Substances 0.000 title claims description 128
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000011241 protective layer Substances 0.000 claims description 121
- 239000000463 material Substances 0.000 claims description 86
- 229920001721 polyimide Polymers 0.000 claims description 27
- 230000001681 protective effect Effects 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 37
- 239000010410 layer Substances 0.000 description 29
- 230000035882 stress Effects 0.000 description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 16
- 229910010271 silicon carbide Inorganic materials 0.000 description 15
- 239000000758 substrate Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000007747 plating Methods 0.000 description 10
- 230000008646 thermal stress Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910017755 Cu-Sn Inorganic materials 0.000 description 2
- 229910017927 Cu—Sn Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Description
まず、本発明の実施の形態1にかかる半導体装置100の構成について説明する。図1は、本発明の実施の形態1にかかる半導体装置1を示す断面図である。
図6は、本発明の実施の形態2にかかる半導体装置101を示す断面図である。図6において、図1と同じ符号を付けたものは、同一または対応する構成を示している。本実施の形態は、実施の形態1と比較して緩衝板19を備えた構成が相違しているため、以下においては、緩衝板19及び緩衝板19に関連する構成についてのみ説明し、他の構成についてはその説明を省略する。
Claims (2)
- 半導体素子の表面電極上に、開口を有する第一の保護層と前記第一の保護層の開口よりも大きい開口を有する第二の保護層とを形成する工程と、
前記第一の保護層の開口内の前記表面電極上と前記第一の保護層上とに付加電極を形成する工程と、
接合材を用いて、前記付加電極と外部端子とを接合する工程と、
を備え、
前記第一及び第二の保護層を形成する工程は、
前記表面電極上に第一の保護材料膜を形成するステップと、
前記第一の保護材料膜上に第二の保護材料膜を形成するステップと、
前記第二の保護材料膜上にレジストを形成するステップと、
前記レジスト上から等方性エッチングにより前記第二の保護材料膜に前記第二の保護層の開口を形成するステップと、
前記レジスト上から異方性エッチングにより前記第一の保護材料膜に前記第一の保護層の開口を形成するステップとからなる、
半導体装置の製造方法。 - 前記第一の保護材料膜及び前記第二の保護材料膜は、ポリイミドで構成され、
前記第一の保護材料膜を形成するステップと前記第二の保護材料膜を形成するステップとの間には、前記第一の保護材料膜を構成する前記ポリイミドをイミド化する熱処理ステップを備える、
ことを特徴とする請求項1記載の半導体装置の製造方法。
Priority Applications (1)
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---|---|---|---|
JP2013141890A JP6111907B2 (ja) | 2013-07-05 | 2013-07-05 | 半導体装置の製造方法 |
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JP2013141890A JP6111907B2 (ja) | 2013-07-05 | 2013-07-05 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015015395A JP2015015395A (ja) | 2015-01-22 |
JP6111907B2 true JP6111907B2 (ja) | 2017-04-12 |
Family
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JP2013141890A Active JP6111907B2 (ja) | 2013-07-05 | 2013-07-05 | 半導体装置の製造方法 |
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JP (1) | JP6111907B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10418301B2 (en) | 2017-07-21 | 2019-09-17 | Mitsubishi Electric Corporation | Power device |
US11784167B2 (en) | 2021-09-22 | 2023-10-10 | Kabushiki Kaisha Toshiba | Semiconductor device with metal film having openings |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112017006825T5 (de) * | 2017-01-13 | 2019-10-02 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zum Herstellen derselben |
DE112017007960B4 (de) * | 2017-09-04 | 2023-06-29 | Mitsubishi Electric Corporation | Halbleitermodul und Leistungsumwandlungsvorrichtung |
JP2019212808A (ja) * | 2018-06-06 | 2019-12-12 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP7226186B2 (ja) * | 2019-08-23 | 2023-02-21 | 三菱電機株式会社 | 半導体装置 |
JP7443926B2 (ja) | 2020-05-15 | 2024-03-06 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2021007182A (ja) * | 2020-10-19 | 2021-01-21 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US5223851A (en) * | 1991-06-05 | 1993-06-29 | Trovan Limited | Apparatus for facilitating interconnection of antenna lead wires to an integrated circuit and encapsulating the assembly to form an improved miniature transponder device |
US5960306A (en) * | 1995-12-15 | 1999-09-28 | Motorola, Inc. | Process for forming a semiconductor device |
JPH11163045A (ja) * | 1997-11-26 | 1999-06-18 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2003068738A (ja) * | 2001-08-29 | 2003-03-07 | Seiko Epson Corp | 半導体装置及びその製造方法及び半導体チップ及びその実装方法 |
ATE392012T1 (de) * | 2002-11-08 | 2008-04-15 | Nxp Bv | Integrierte schaltung mit mindestens einem kontakthöcker |
JP2010272711A (ja) * | 2009-05-22 | 2010-12-02 | Mitsubishi Electric Corp | 半導体デバイスとその製造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10418301B2 (en) | 2017-07-21 | 2019-09-17 | Mitsubishi Electric Corporation | Power device |
US11784167B2 (en) | 2021-09-22 | 2023-10-10 | Kabushiki Kaisha Toshiba | Semiconductor device with metal film having openings |
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JP2015015395A (ja) | 2015-01-22 |
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